DSA00128758.pdf
by Fujitsu
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FLC167WF
C-Band Power GaAs FET
FEATURES
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High Output Power: P1dB = 31.8dBm(Typ.)
High Gain: G1dB = 7.5dB(Typ.)
High PAE: add = 35%(Typ.)
Proven Reliability
Hermetic Metal/Cerami
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Original
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Unknown
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Unknown
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Unknown
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