DSA00228396.pdf by ON Semiconductor

Partial File Text NGD8205N Ignition IGBT 20 A, 350 V, N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for
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8205N NGD8205N NGD8205NT4

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