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DSAUD0043209.pdf
Manufacturer
Cree
Partial File Text
CGH40006P 6 W, RF Power GaN HEMT Cree's CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general pu
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User Tagged Keywords
CGH40006
CGH40006P
CGH40006P-TB
RO5880