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Partial File Text ï»¿CEM8912 _March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES â¢ 30V, 7A, Rds(on)=28iti Q @ Vgs=1 0V. Rds(on)=45i7iQ @Vgs=4.5V. â¢ Super high dense cell design for ex
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