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    CEM8912 Search Results

    CEM8912 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEM8912 Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF
    CEM8912 Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF

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    CEM8912

    Abstract: No abstract text available
    Text: CEM8912 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 7A , RDS ON =28m Ω @VGS=10V. RDS(ON)=45m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEM8912 CEM8912

    CEM8912

    Abstract: No abstract text available
    Text: March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 7 A , Rds on =28iti Q @ Vgs=1 0V. R ds (o n )=45 iti Q Di @ Vgs=4.5V. Di D2 D2 • Super high dense cell design for extremely low R ds(on>. • High power and current handing capability.


    OCR Scan     		PDF CEM8912 28iti 45i7iQ CEM8912