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Partial File Text ï»¿CEM9936 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES â¢ 30V, 5A, Rds(on)=50iti Q @ Vgs=1 0V. RDS(ON)=80mQ @VGS=4.5V. â¢ Super high dense cell design for extre
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