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    CEM9936 Search Results

    CEM9936 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEM9936 Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEM9936A Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF

    CEM9936 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CEM9936A

    Abstract: No abstract text available
    Text: CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 5.4A, RDS ON = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9936A CEM9936A

    CEM9936A

    Abstract: No abstract text available
    Text: CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 5.4A, RDS ON = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		PDF CEM9936A CEM9936A

    CEM9936

    Abstract: CEM9936A
    Text: CEM9936A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 5.4A , RDS ON =40mΩ @VGS=10V. RDS(ON)=55m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEM9936A CEM9936 CEM9936A

    CEM9936

    Abstract: No abstract text available
    Text: CEM9936 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 5A , RDS ON =50m Ω @VGS=10V. RDS(ON)=80m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		PDF CEM9936 CEM9936

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC

    semiconductor cross reference

    Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		PDF STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    DIODE S3V 03

    Abstract: CEM9936
    Text: CEM9936 M a rch 19 9 8 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 5 A , R ds on =50 iti Q @ V g s =1 0 V . RDS(ON)=80mi2 @ V g s = 4 .5 V . Di Di D2 Ü2 • Super high dense cell design for extremely low R d s (o n ). • High power and current handing capability.


    OCR Scan     		PDF CEM9936 50iti DIODE S3V 03 CEM9936