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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V IC = 7.5A, TC = 100°C tSC 3s, TJ(max) = 150°C VCE(on) typ. = 1.60V @ Ic = 10A
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G C E
IRG7IC18FDPbF
C
E
A
