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    ZY- TRANSISTOR Search Results

    ZY- TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ZY- TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN TRANSISTOR Z4

    Abstract: b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595
    Text: ,-=r=-= -= ZY f .- = r = anAMPcompany * Radar Pulsed Power Transistor, 65W, 1OOp Pulse, 10% Duty PH3134-65M 3.1 - 3.4 GHz Features l l l l l l l l .650 16.51 - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation


    Original     		PDF PH3134-65M 225t010 iEV-15 NPN TRANSISTOR Z4 b 595 transistor transistor z4 n transistor ZY PH3134-65M 572i transistor b 595

    New Jersey Semiconductor

    Abstract: No abstract text available
    Text: <zy\£.uj J. , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1941 Silicon PNP Power Transistor I I \ •-< DESCRIPTION • Low Collector Saturation Voltage: VCE(sat)=- 2.0V(Min) @lc=- 7A


    Original     		PDF 2SA1941 2SC51 -50mA; -140V; New Jersey Semiconductor

    AE8 diode

    Abstract: 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G
    Text: IPB120N06N G IPP120N06N G "%&$!"# Power-Transistor Product Summary Features . V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4; I &/  D4@A8 >= X" /- I9 6 O   R >? 4@0B 8=6 B


    Original     		PDF IPB120N06N IPP120N06N AE8 diode 4a8 diode diode marking A43 DIODE S6 4aa BV99 aA88 IPB120N06N G

    IPP050N06NG

    Abstract: diode a43 IPB050N06NG
    Text: IPP050N06N G IPB050N06N G "%&$!"# Power-Transistor Product Summary Features V 9G O >@50ABAE8 B 2 78=6 2 >=D4@B 4@A 0=3 AG=2 @42 B 858 2 0B 8>= R  + >=< 0F + & O ' 2 70=4;4=70=2 4< 4=B =>@< 0;4D4;  D4@A8 >= I9 . I ,&/ X" ( 6 O   R >? 4@0B 8=6 B


    Original     		PDF IPP050N06N IPB050N06N IPP050N06NG diode a43 IPB050N06NG

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTA2015 TRANSISTOR PNP FEATURES SOT–323  Excellent hFE Linearity  Complementary to KTC4076 APPLICATIONS  General Purpose Switching MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-323 KTA2015 KTC4076 -100mA -400mA -100mA, -10mA -20mA 25Min

    transistor ZY

    Abstract: ZY marking zy- transistor marking zo sot KTC4076 marking ZY KTA2015W marking code ZO
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation. PC=100mW z Excellent hFE Linearity. z Complementary to KTC4076. z Small package. KTA2015W Pb Lead-free APPLICATIONS z General purpose application and switching application.


    Original     		PDF KTA2015W 100mW) KTC4076. OT-323 BL/SSSTF048 transistor ZY ZY marking zy- transistor marking zo sot KTC4076 marking ZY KTA2015W marking code ZO

    marking ZO

    Abstract: 2SA1588
    Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1588 Features Excellent hFE linearity. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage


    Original     		PDF 2SA1588 -100mA -100mA, -10mA -20mA marking ZO 2SA1588

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM: 0.1 W (Tamb=25℃) Collector current -0.5 A ICM: Collector-base voltage


    Original     		PDF OT-323 OT-323 KTA2015 -100mA -400mA -100mA, -10mA -20mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTD1898 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage


    Original     		PDF OT-89 KTD1898 OT-89 500mA 500mA,

    transistor marking zg

    Abstract: transistor zg zy- transistor KTD1898 ZY marking
    Text: KTD1898 KTD1898 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: 1 A Collector-base voltage 100 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF KTD1898 OT-89 500mA 500mA, transistor marking zg transistor zg zy- transistor KTD1898 ZY marking

    KTA2015

    Abstract: No abstract text available
    Text: KTA2015 SOT-323 KTA2015 TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 0.1 W (Tamb=25℃) Collector current ICM: -0.5 A Collector-base voltage -35 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃


    Original     		PDF KTA2015 OT-323 -100mA -400mA -100mA, -10mA -20mA KTA2015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTD1898 TRANSISTOR NPN 1. BASE FEATURES z Small Flat Package z General Purpose Application 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-89-3L OT-89-3L KTD1898 500mA 500mA 100MHz

    marking 1301 sot-23

    Abstract: sot-23 Marking zy 2SA1182 zy marking sot23 1301 sot marking zo sot -6
    Text: Transistors SMD Type Silicon PNP Epitaxial 2SA1182 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 SOT-23 package 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector


    Original     		PDF 2SA1182 OT-23 OT-23 marking 1301 sot-23 sot-23 Marking zy 2SA1182 zy marking sot23 1301 sot marking zo sot -6

    KTA2015

    Abstract: marking Zo
    Text: KTA2015 PNP General Purpose Transistors P b Lead Pb -Free 3 1 2 SOT-323 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous


    Original     		PDF KTA2015 OT-323 OT-323 -100mA, -10mA -100mA -20mA 07-Apr-10 KTA2015 marking Zo

    transistor smd zy

    Abstract: smd transistor zy zy smd transistor transistor SMD marking ZY smd marking zx zy- transistor transistor smd zx smd transistor 560 2SB1628 smd transistor 660
    Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB1628 Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to Base Voltage Parameter VCBO -20 V Collector to Emitter Voltage


    Original     		PDF 2SB1628 transistor smd zy smd transistor zy zy smd transistor transistor SMD marking ZY smd marking zx zy- transistor transistor smd zx smd transistor 560 2SB1628 smd transistor 660

    transistor 3s4

    Abstract: SOT-103 T-35-Z7 SOT103 BF964S 35z7 transistor SOT103 mosfet bf964
    Text: PHILIPS INTERNATIONAL SbE ]> B F 9 6 4 S _ 711Dô2fci 003*4054 3S4 M P H IN FO R D E T A IL E D INFORM ATION SEE T H E L A T E S T ISSU E O F HANDBOOK SC07 OR D A T A S H E E T T~3S~Zy S IL IC O N N -C H A N N E L D U AL G A T E M O S -F E T Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected,


    OCR Scan     		PDF BF964S_ 711002b 003WD5M T-35-Z7 OT103. transistor 3s4 SOT-103 T-35-Z7 SOT103 BF964S 35z7 transistor SOT103 mosfet bf964

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


    OCR Scan     		PDF

    C3656

    Abstract: C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396
    Text: Resistance-Contained Transistor F e a t u r e s if On-chip bias resistance •Cx Sma 11-sized package MCP.CP,SPA,NP ☆ Both PNP and NPN types are available. a le I C “ 1 O O m A ( ) : Ma i k i ng on MCP. CP. S e r i A p p i Abso ute Maximum Ratings 2SA1341(BL)/2SC3395(BY)


    OCR Scan     		PDF 11-sized 2SA1676 /2SC4396 2SA1677 /2SC4397 2SA1678 /2SC4398 2SA1722 /2SC4498 2SA1341 C3656 C4397 c3399 A1678 transistor C4047 c3396 a1343 C3863 A1526 C4396

    C3656

    Abstract: C4397 transistor c3399 a1678 transistor C4047 A1526 2sc3916 2SA1573 C3396 a1343
    Text: S A if V O Resistance-Contained Transistor Series F eatu re s App l i e ; a t i o n s ☆ Swi tch ing circuit. ☆ Inverter circuit. ☆ Interi ace circuit. ☆ Driver circuit. oto I C-* lOOmA S e r i e s Ta*25"C ( ): Ma rk ing on MCP, CP. For PNP Type No


    OCR Scan     		PDF 2SA1676 /2SC4396 2SA1677 /2SC4397 2SA1678 /2SC4398 2SA1722 /2SC4498 2SA1341 2SA1508 C3656 C4397 transistor c3399 a1678 transistor C4047 A1526 2sc3916 2SA1573 C3396 a1343

    2SB1460

    Abstract: No abstract text available
    Text: 2SB1460 h 7 > y ^ ^ //Transistors I e £ * V 7 j u7‘ I' - P NP y 'J I] > h -7 > y Epitaxial Planar PN P Silicon Transistor f é U iM ll ^ J ílí lf f l/ L o w Freq. Power Amp. • • « ft Dimensions Unit : mm 1) V c e (sat) V c e (sat)=— 0.2V(Typ.)


    OCR Scan     		PDF 2SB1460 100MHz 2SB1460

    MG20Q6EK1

    Abstract: 3Tg 21
    Text: MG20Q6EK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. 10T0R CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 6 Darlington Transistors are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . High DC Current Gain


    OCR Scan     		PDF MG20Q6EK1 10T0R MG20Q6EK1 3Tg 21

    2S114

    Abstract: 2SA1423 3AAP 2SC3656
    Text: Ordering number : EN 16 8 5 A 2SA1423/2SC3656 i PNP/NPN Epitaxial Planar Silicon Transistors SAKYO 080 Switching Appl ications with Bias Resistor finterface circuì/ Switching circuit, inverter circuit Features . With bias resistor (RlslOkU ,R2=10kfì ).


    OCR Scan     		PDF 2SA1423/2SC3656 2SA1423 2S114 2SA1423 3AAP 2SC3656

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


    OCR Scan     		PDF F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode

    Transistor BFR 135

    Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
    Text: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF 900MHz OT-323 Q62702-F1510 Transistor BFR 135 Transistor BFR Transistor BFR 35 transistor K 1412