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    ZXMS6004 Price and Stock

    Diodes Incorporated ZXMS6004FFTA

    IC PWR DRIVER N-CHAN 1:1 SOT23F
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    Diodes Incorporated ZXMS6004DN8-13

    IC PWR DRIVER N-CHANNEL 1:1 8SO
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    Diodes Incorporated ZXMS6004FFQTA

    IC PWR DRIVER N-CHAN 1:1 SOT23F
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    DigiKey ZXMS6004FFQTA Reel 18,000 3,000
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    Diodes Incorporated ZXMS6004SGTA

    IC PWR DRIVER N-CHAN 1:1 SOT223
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    Diodes Incorporated ZXMS6004DGQ-13

    LOW SIDE INTELLIFET SOT223
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    ZXMS6004 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMS6004DG Diodes 60V N-channel self protected enhancement mode Intellifet MOSFET Original PDF
    ZXMS6004DGQ-13 Diodes LOW SIDE INTELLIFET SOT223 Original PDF
    ZXMS6004DGTA Diodes PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), IC LOW SIDE DRIVER SOT223 Original PDF
    ZXMS6004DN8-13 Diodes Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - MOSFET N-CH 60V 1.3A SO8 Original PDF
    ZXMS6004DN8Q-13 Diodes Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - LOW SIDE INTELLIFET SO-8 Original PDF
    ZXMS6004DT8 Diodes 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Original PDF
    ZXMS6004DT8QTA Diodes Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - IC LOW SIDE DRIVER Original PDF
    ZXMS6004DT8TA Diodes PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), MOSF N CH 60V 900MA SM8 Original PDF
    ZXMS6004FF Diodes 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Original PDF
    ZXMS6004FFQTA Diodes Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - MOSFET 60V N-CHAN SOT23F Original PDF
    ZXMS6004FFTA Diodes PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), MOSFET N-CH 60V 1.3A SOT23F Original PDF
    ZXMS6004N8-13 Diodes Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - MOSFET N-CH 60V 1.3A S08 Original PDF
    ZXMS6004N8Q-13 Diodes Integrated Circuits (ICs) - PMIC - Power Distribution Switches, Load Drivers - LOW SIDE INTELLIFET SO-8 Original PDF
    ZXMS6004SG Diodes 60V N-channel self protected enhancement mode Intellifet MOSFET Original PDF
    ZXMS6004SGTA Diodes PMIC - MOSFET, Bridge Drivers - Internal Switch, Integrated Circuits (ICs), MOSFET N-CH 60V 1.3A SOT223 Original PDF

    ZXMS6004 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6004SG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Features and Benefits ADVANCE INFORMATION Product Summary •  Continuos drain source voltage On-state resistance 60V 500mΩ   Nominal load current VIN = 5V Clamping Energy


    Original
    PDF ZXMS6004SG 480mJ ZXMS6004SG DS32247

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description


    Original
    PDF ZXMS6004SG 480mJ ZXMS6004SG Log62-3154 D-81541

    ZXMS6004DT8TA

    Abstract: ZXMS6004DT8
    Text: A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.2 A Clamping Energy 210 mJ SM8 Package


    Original
    PDF ZXMS6004DT8 ZXMS6004DT8 DS32245 ZXMS6004DT8TA

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6004SG Green 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET ADVANCE INFORMATION Product Summary Features and Benefits • Continuos Drain Source Voltage 60V • Compact High Power Dissipation Package • • On-State Resistance Nominal Load Current VIN = 5V


    Original
    PDF ZXMS6004SG ZXMS6004SG 480mJ DS33610

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMS6004FF 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary •    Continuos drain source voltage On-state resistance Nominal load current VIN = 5V Clamping Energy Features and Benefits


    Original
    PDF ZXMS6004FF ZXMS6004FF DS33609

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6004FF 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary •    Continuos drain source voltage On-state resistance Nominal load current VIN = 5V Clamping Energy Features and Benefits 60V 500mΩ 1.3A 90mJ Description


    Original
    PDF ZXMS6004FF ZXMS6004FF DS33609

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.2 A Clamping Energy 210 mJ SM8 Package


    Original
    PDF ZXMS6004DT8 ZXMS6004DT8 DS32245

    mosfet 4800

    Abstract: ZXMS6004FF 4800 mosfet AECQ101 ZXMS6004EV1 FULLY PROTECTED MOSFET
    Text: New Product Announcement December 2008 The worlds smallest self protected MOSFET Extending the IntelliFET range with the introduction of the ZXMS6004FF Introduction Innovation in both silicon and package technology has enabled Diodes Incorporated to extend its IntelliFETTM range with the


    Original
    PDF ZXMS6004FF ZXMS6004FF, ZXMS6004FF OT223 AEC-Q101 mosfet 4800 4800 mosfet AECQ101 ZXMS6004EV1 FULLY PROTECTED MOSFET

    zxms6004

    Abstract: ZXMS6004FF ZXMS66004FFTA zxms66004 design ideas TS16949
    Text: A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 90mJ Description


    Original
    PDF ZXMS6004FF ZXMS6004FF D-81541 zxms6004 ZXMS66004FFTA zxms66004 design ideas TS16949

    ZXMS66004SGTA

    Abstract: zxms6004 design ideas TS16949 ZXMS6004SG zxms66004
    Text: A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 480mJ Description


    Original
    PDF ZXMS6004SG 480mJ ZXMS6004SG Level1362-3154 D-81541 ZXMS66004SGTA zxms6004 design ideas TS16949 zxms66004

    zxms66004

    Abstract: ZXMS66004DGTA 6004D design ideas ZXMS6004DG TS16949 ZXMS6004
    Text: A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 490mJ Description


    Original
    PDF ZXMS6004DG 490mJ ZXMS6004DG Level1362-3154 D-81541 zxms66004 ZXMS66004DGTA 6004D design ideas TS16949 ZXMS6004

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMS6004FF 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary •    Continuos drain source voltage On-state resistance Nominal load current VIN = 5V Clamping Energy Features and Benefits


    Original
    PDF ZXMS6004FF ZXMS6004FF DS33609

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 490mJ Description


    Original
    PDF ZXMS6004DG 490mJ ZXMS6004DG Log62-3154 D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZXMS6004FF 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary •    Continuos drain source voltage On-state resistance Nominal load current VIN = 5V Clamping Energy Features and Benefits 60V 500mΩ 1.3A 90mJ Description


    Original
    PDF ZXMS6004FF ZXMS6004FF DS33609 ZXMS6004FFTA

    ZXMS6004FF

    Abstract: mosfet 4800 4800 mosfet FULLY PROTECTED MOSFET mosfet driver inductive loads AECQ101 ZXMS6004EV1 zxms6004 overvoltage protection ttl PROTECTED MOSFET
    Text: New Product Announcement December 2008 The worlds smallest self protected MOSFET Extending the IntelliFET range with the introduction of the ZXMS6004FF Introduction Innovation in both silicon and package technology has enabled Diodes Incorporated to extend its IntelliFET range with the introduction


    Original
    PDF ZXMS6004FF ZXMS6004FF, ZXMS6004FF OT223 AEC-Q101 mosfet 4800 4800 mosfet FULLY PROTECTED MOSFET mosfet driver inductive loads AECQ101 ZXMS6004EV1 zxms6004 overvoltage protection ttl PROTECTED MOSFET

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 mΩ Nominal load current VIN = 5V 1.3 A Clamping energy 90mJ Description


    Original
    PDF ZXMS6004FF ZXMS6004FF Logi62-3154 D-81541

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    complementary MOSFET TO252

    Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
    Text: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and


    Original
    PDF D-81541 A1103-04, complementary MOSFET TO252 zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4

    DMG1012

    Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
    Text: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS


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    PDF A1103-04, DMG1012 ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8

    Untitled

    Abstract: No abstract text available
    Text: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being


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    siemens automotive relay dc 12v

    Abstract: Bsp78
    Text: June 2010 Know How Guide IntelliFET - low side self-protected MOSFET Features Benefits • Load dump protection • Designed for harsh operating environments without the need for extra clamps. • Thermal shutdown non-latching auto restart • Self-protecting when in high


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    PDF D-81541 A1103-04, siemens automotive relay dc 12v Bsp78

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


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    PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    Untitled

    Abstract: No abstract text available
    Text: DCS/PCN-1147 PRODUCT CHANGE NOTICE Initial Final Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: September 16, 2009 December 15, 2009 Analog and Discrete New Manufacturing Location PCN #: 1147 TITLE Additional Assembly Location AUK Dalian, China for SOT23F Package


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    PDF DCS/PCN-1147 OT23F DW-064

    IntelliFET

    Abstract: No abstract text available
    Text: Project Next Step RS v18_Dr. Lu.ppt The Environmental Challenge Figure 1 – Typical DC Battery Voltage The DC voltage of a motor vehicle can deviate from the nominal 12V DC due to: ♦ Crank voltage Engine starting : 6V ♦ Load dump and transient: can be up to +/-125V.


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    PDF /-125V. ZXMS6004DT8 ZXMS6005DG ZXMS6005SG ZXMS6005DT8 OT223 IntelliFET