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    ZXMN6A11DN8TA Price and Stock

    Diodes Incorporated ZXMN6A11DN8TA

    MOSFET 2N-CH 60V 2.5A 8SO
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    DigiKey ZXMN6A11DN8TA Reel 2,500 500
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    ZXMN6A11DN8TA Cut Tape 728 1
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    Avnet Americas ZXMN6A11DN8TA Reel 12 Weeks 500
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    Mouser Electronics ZXMN6A11DN8TA 1,177
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    Bristol Electronics ZXMN6A11DN8TA 17,477
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    Quest Components ZXMN6A11DN8TA 203
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    TME ZXMN6A11DN8TA 41 1
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    Avnet Asia ZXMN6A11DN8TA 12 Weeks 1,000
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    New Advantage Corporation ZXMN6A11DN8TA 1,000 1
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    ZXMN6A11DN8TA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ZXMN6A11DN8TA Zetex Semiconductors DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    ZXMN6A11DN8TA Zetex Semiconductors 60V N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    ZXMN6A11DN8TA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZXMN6A11DN8

    Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d
    Text: ZXMN6A11DN8 DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=60V; RDS(ON)=0.15⍀ D=2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC 6a11d

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    ZXMN6A11DN8

    Abstract: ZXMN6A11DN8TA ZXMN6A11DN8TC
    Text: ZXMN6A11DN8 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 60V; RDS(ON)= 0.14 ID= 2.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This


    Original     		PDF ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8TC

    GE1030

    Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
    Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds


    Original     		PDF DCS/PCN-1119 PCN-1119 OT223, OD323, OD523, OT323, OT23-6, OT23-5 GE1030MOT223 ZXTP2014GTC GE1030 FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6

    ZXMN6A11DN8TA

    Abstract: ZXMN6A11DN8 6a11d
    Text: ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary RDS on (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 V(BR)DSS 60 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast


    Original     		PDF ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN8 6a11d

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502

    AEC-Q101

    Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
    Text: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC


    Original     		PDF AEC-Q100/AEC-Q101 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q AEC-Q101 AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


    Original     		PDF 2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA

    Untitled

    Abstract: No abstract text available
    Text: ZXMN6A11DN8 60V SO8 Dual N-channel enhancement mode MOSFET Summary V BR DSS 60 RDS(on) (⍀) ID (A) 0.120 @ VGS= 10V 3.2 0.180 @ VGS= 4.5V 2.6 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast


    Original     		PDF ZXMN6A11DN8