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    ZXMN2B01FTA Search Results

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    ZXMN2B01FTA Price and Stock

    Diodes Incorporated ZXMN2B01FTA

    MOSFET N-CH 20V 2.1A SOT23-3
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    DigiKey ZXMN2B01FTA Digi-Reel 86,758 1
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    ZXMN2B01FTA Cut Tape 86,758 1
    • 1 $0.58
    • 10 $0.36
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    • 1000 $0.15563
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    ZXMN2B01FTA Reel 84,000 3,000
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    Avnet Americas ZXMN2B01FTA Reel 8 Weeks 3,000
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    Mouser Electronics ZXMN2B01FTA 25,609
    • 1 $0.47
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    • 100 $0.21
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    RS ZXMN2B01FTA Bulk 10
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    Future Electronics ZXMN2B01FTA Reel 8 Weeks 3,000
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    • 10000 $0.146
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    ZXMN2B01FTA Reel 8 Weeks 3,000
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    TME ZXMN2B01FTA 3,000 1
    • 1 $0.405
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    • 100 $0.176
    • 1000 $0.166
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    Avnet Silica ZXMN2B01FTA 6,000 10 Weeks 3,000
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    New Advantage Corporation ZXMN2B01FTA 6,000 1
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    Zetex / Diodes Inc ZXMN2B01FTA

    Electronic Component
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    ComSIT USA ZXMN2B01FTA 2,688
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    ZXMN2B01FTA Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXMN2B01FTA TY Semiconductor MOSFET N-CHAN 20V 1.7-2.4A - SOT-23 Original PDF
    ZXMN2B01FTA Zetex Semiconductors 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Original PDF

    ZXMN2B01FTA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


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    ZXMN2B01F PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from TY features low onresistance achievable with low gate drive.


    Original
    ZXMN2B01F ZXMN2B01FTA 00A/ms PDF

    GE1030

    Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
    Text: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds


    Original
    DCS/PCN-1119 PCN-1119 OT223, OD323, OD523, OT323, OT23-6, OT23-5 GE1030MOT223 ZXTP2014GTC GE1030 FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6 PDF

    AP3039AM

    Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
    Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)


    Original
    2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 PDF

    AEC-Q101

    Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
    Text: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC


    Original
    AEC-Q100/AEC-Q101 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q AEC-Q101 AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA PDF

    TS16949

    Abstract: ZXMN2B01F ZXMN2B01FTA
    Text: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


    Original
    ZXMN2B01F ZXMN2B01FTA D-81541 TS16949 ZXMN2B01F ZXMN2B01FTA PDF

    zxczm800

    Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
    Text: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)


    Original
    2000/53/EC 2000/53/EC 2002/95/EC SJ/T11363-2006 zxczm800 SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS on (⍀) ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 0.200 @ VGS= 1.8V 1.7 V(BR)DSS 20 Description This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.


    Original
    ZXMN2B01F D-81541 PDF