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Diodes Incorporated ZXMN2A03E6TC MOSFET N-CH 20V 3.7A SOT23-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ZXMN2A03E6TC	Reel			10,000	1 - 10 - 100 - 1000 - 10000 $0.202	Buy Now

ZXMN2A03E6TC Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
ZXMN2A03E6TC		Zetex Semiconductors	FETs - Single, Discrete Semiconductor Products, MOSFET N-CHAN 20V SOT23-6		Original	PDF
ZXMN2A03E6TC		Zetex Semiconductors	20V N-CHANNEL ENHANCEMENT MODE MOSFET		Original	PDF

ZXMN2A03E6TC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ZXMN2A03E6TA Abstract: ZXMN2A03E6TC ZXMN2A03E6 Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.055⍀ D=4.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,	Original	PDF	ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6
Untitled Abstract: No abstract text available Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA
Untitled Abstract: No abstract text available Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC
Untitled Abstract: No abstract text available Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC
AP3039AM Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)	Original	PDF	2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Untitled Abstract: No abstract text available Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS= 20V; RDS(ON)= 0.55 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC
ZXMN2A03E6 Abstract: ZXMN2A03E6TA ZXMN2A03E6TC Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This	Original	PDF	ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC ZXMN2A03E6 ZXMN2A03E6TA ZXMN2A03E6TC
Untitled Abstract: No abstract text available Text: ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)=0.055⍀ D=4.5A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power	Original	PDF	ZXMN2A03E6 OT23-6 OT23-6 ZXMN2A03E6TA ZXMN2A03E6TC100