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    ZVN2210B Search Results

    ZVN2210B Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZVN2210B Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZVN2210B Unknown FET Data Book Scan PDF
    ZVN2210B Unknown Semiconductor Master Cross Reference Guide Scan PDF

    ZVN2210B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ZVN2210B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)3.45 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)


    Original     		ZVN2210B PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode PDF

    L50Q

    Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
    Text: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50


    OCR Scan     		OT-23, ZVP3210M" ZVP2210M zvn3210m zvn3210l L50Q ZVN1320B ZVN2210L zvn311 ZVP3210M PDF

    ZVN2210A

    Abstract: ZVN2210L ZVN2210 ZVN2210B G179
    Text: PLESSEY S E M I C O N D / D I S C R E T E T 5 De 1 ? E 5 D S 3 3 7220533 PLES SE Y S E M IC ON D/ DI SCR E TE N-channel enhancement mode vertical DMOS FET DOOSt,? 95D 05677 4 D ZVN2210 i ! FEAT U RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown


    OCR Scan     		ZVN2210 ZVN2210B* ZVN2210L G-182 5SDS33 G-183 17EEDS33 ZVN2210A ZVN2210 ZVN2210B G179 PDF

    ISD 2210

    Abstract: No abstract text available
    Text: ZETEX SEMICONDUCTORS TSD D Bi T'ïVOSTÔ D O O S b ? ? 2 MZETB 95D 0 5 6 7 7 T '3 ? '0 ? ZV N 2210 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		ZVN2210B* ZVN2210L stability39 O-220 ISD 2210 PDF

    FERRANTI

    Abstract: IRFZ32 VN10LP ZVNO12 IRFZ30 ZVN2106 ZVN2106A IRFZ20 IRFZ22 ZVN0120A
    Text: - 245 /m Ta=25l3 Vds or % Vd g Vg s !l (V) (V) t £J € *± € m Vg s (V) C M A) N N N N N N N N N 200 ± 2 0 200 ± 2 0 240 ± 2 0 240 ± 2 0 240 ± 2 0 350 ± 2 0 N N N N N N N N N 400 400 450 90 60 60 60 100 100 100 200 200 200 60 60 100 5 ±20 ±20


    OCR Scan     		IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5VM2110L ZVN2120A FERRANTI VN10LP ZVNO12 ZVN2106 ZVN2106A ZVN0120A PDF