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    ZVN2106L Search Results

    ZVN2106L Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ZVN2106L Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZVN2106L Unknown FET Data Book Scan PDF
    ZVN2106L Unknown Semiconductor Master Cross Reference Guide Scan PDF

    ZVN2106L Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: ZVN2106L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)650m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.5 Minimum Operating Temp (øC)


    Original     		PDF ZVN2106L

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    sem 2106

    Abstract: sem 2106 24 pin ZVN2106 SOT 153 2106 sot
    Text: ZETEX S E M I C O N D U C T O R S W D T Î 7 0 5 7 Û Q G D S b k S 0 • ZETB 95D 0 5 6 4 5 T ' 3 ? - <5? N-channel enhancement mode vertical DMOS FET ZVN 2106 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF ZVN2106A* ZVN2106B* ZVN2106L O-220 sem 2106 sem 2106 24 pin ZVN2106 SOT 153 2106 sot

    1rfz44

    Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
    Text: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)


    OCR Scan     		PDF IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5TO-220 IRL510 1rfz44 MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022

    ZVN0106A

    Abstract: ZVP0106A ZVP3304A ZVN1306A ZVN0108L ZVN0106B ZVP2104A ZVP2106A ZVN0106 ZVN1306B
    Text: « » W ¡2 » « EH a > o ® > 8 9 P18 ! ZVN3206L 14A, 0.150 8 I I i ! ZVN3306A I0S17O VN'OLI 0.27A, 50 ZVN1306A 0.2A, 100 8 ZVP0108B 0.6A, 80 ZVP1308B 0.25A, 200 ZVP0108A 0.23A. 8 0 ZVP1308A 0.14A, 200 ZVN0108L 1.5A, 4 0 ZVN1308B 0.5A. 100 ZVP2208B 1.5A, 1 6 0


    OCR Scan     		PDF ITO-92 T0-220 T0-220 ZVN3202L ZVN3202M ZVP3202L* ZVP3202M* ZVN3102B ZVN3102L ZVN3102M ZVN0106A ZVP0106A ZVP3304A ZVN1306A ZVN0108L ZVN0106B ZVP2104A ZVP2106A ZVN0106 ZVN1306B

    n2106

    Abstract: vn2106 ZVN2106 Ferranti zvn
    Text: PLESSEY SEMICOND/DISCRETE DE~|? 5 5 DS 33 GOOSbMS a f ” 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /D I S C R E T E 95D 05645 T" 3 1 - 0 ? N-channel enhancement mode vertical DMOS FET ZVN 2106 FEATURES • Compact geometry • Fast switching speeds •


    OCR Scan     		PDF G-151 G-153 G-154 n2106 vn2106 ZVN2106 Ferranti zvn

    FERRANTI

    Abstract: IRFZ32 VN10LP ZVNO12 IRFZ30 ZVN2106 ZVN2106A IRFZ20 IRFZ22 ZVN0120A
    Text: - 245 /m Ta=25l3 Vds or % Vd g Vg s !l (V) (V) t £J € *± € m Vg s (V) C M A) N N N N N N N N N 200 ± 2 0 200 ± 2 0 240 ± 2 0 240 ± 2 0 240 ± 2 0 350 ± 2 0 N N N N N N N N N 400 400 450 90 60 60 60 100 100 100 200 200 200 60 60 100 5 ±20 ±20


    OCR Scan     		PDF IRFZ20 O-220 IRFZ22 IRFZ30 IRFZ32 5VM2110L ZVN2120A FERRANTI VN10LP ZVNO12 ZVN2106 ZVN2106A ZVN0120A