amplifier 900mhz
Abstract: ZUMT5179 ccb transistor
Text: SOT323 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ZUMT5179 ISSUE 1- NOVEMBER 1998 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB PARTMARKING DETAIL - T6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage
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OT323
ZUMT5179
900MHz
200MHz
100MHz
amplifier 900mhz
ZUMT5179
ccb transistor
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ZUMT5088
Abstract: ZUMT5179
Text: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ZUMT5088 ISSUE 1 - DECEMBER 1998 PARTMARKING DETAIL - T20 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4.5 V Continuous Collector Current
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OT323
ZUMT5088
ZUMT5179
100MHz
ZUMT5088
ZUMT5179
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Untitled
Abstract: No abstract text available
Text: SOT323 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSUE 1- NOVEMBER 1998 FEATURES * H igh f T=900M H z M in * M ax capacitance=1pF * L o w noise 4.5dB PARTM ARKING DETAIL -T 6 ABSOLUTE M AXIM UM RATINGS. PARAMETER SYMBOL VALUE UNIT 20 V Collector-Base Voltage
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OT323
100MHz
200MHz
200MHz
ZUMT5179
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RF 450
Abstract: No abstract text available
Text: Section S: Bipolar Transistors NPN RF T r a n s is to r s The transistors listed in the fo llo w in g tables are designed fo r small signal am plification from RF to VHF/UHF frequencies. Typical applications areas include RF security systems Autom otive and Domestic , crystal oscillators, FM
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FMMTH10
FMMT918
BFQ31A
BFQ31
BFS17
BFS17H
BFS17L
BFS20
FMMT5179
1300M
RF 450
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Untitled
Abstract: No abstract text available
Text: SOT323 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 1 - DECEMBER 1998 P A R T M A R K IN G D E T A IL - T 2 0 S»ÜT3tëS ABSOLUTE M AXIM UM RATINGS. PARAMETER SYM BOL VALUE U N IT 35 V VcEO 30 V V ebo 4.5 V 50 mA 330 mW -55 to +150 °C C ollecto r-B ase V oltag e
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OT323
100jj
15KHz
ZUMT5179
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