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    ZTX312 TRANSISTOR Search Results

    ZTX312 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    ZTX312 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SbE » • ^70370 □ G 0 7 0 4 cî 1D1 H Z E T B SEMICONDUCTOR DICE <- m - NPN SWITCHING TRANSISTORS Volts Volts 2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369 2N2369A ZTX314 ZTX313 ZTX312 ZTX311 ZTX310 l ON hFE at l OFF Min. Min. Max. Max.


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    2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369 PDF

    2N2221-2N2222

    Abstract: No abstract text available
    Text: S EM IC O N D U C TO R DICE NPN SWITCHING TRANSISTORS Volts Volts 2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369 2N2369A ZTX314 ZTX313 ZTX312 ZTX 311 ZTX310 toFF h FE 75 75 75 75 60 60 60 60 60 40 40 40 40 30 20 25 40 40 40 40 40


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    2N2218A 2N2219A 2N2221A 2N2222A 2N3904 2N2218 2N2219 2N2221 2N2222 2N2369 2N2221-2N2222 PDF

    ZTX313

    Abstract: BSV26 ZTX314 BSV27 ZTX312 2TX313 ferranti FERRANTI ELECTRONICS BSV25 ZTX310
    Text: NPN Silicon Planar High Speed Switching Transistors DESCRIPTION These are plastic encapsulated transistors specifically designed for high speed sw itching applications and are also useful where very short storage times and low capacitance are required. The E-line package is formed by injection moulding a


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    O-5/39 8-Munich-22, ZTX313 BSV26 ZTX314 BSV27 ZTX312 2TX313 ferranti FERRANTI ELECTRONICS BSV25 ZTX310 PDF

    2N4400

    Abstract: 2N4401 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2222A MPS2907A MPS3642
    Text: TABLE 3 : NPN SWITCHING The transistors in this table are characterised for general medium/high speed switching applications and other application areas, e.g. high speed core driving. Max VcE sat at Max Type V CEO V at at Max. Switching Times at Complement


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    BCY65EP BCY77P MPS3642 BCY59P BCY79P ZTX360 MPS2222A MPS2907A 2N4401 2N4403 2N4400 2N4403 BCY77P BCY79P MPS2907A PDF

    MPS2714

    Abstract: 2N4400 2N4401 BCY59P BCY65EP BCY77P BCY79P MPS2222A MPS2907A MPS3642
    Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR SW ITCH IN G TRANSISTORS The transistors in this table are characterised for general medium/high speed switching applications and they may also be used in other application areas. The devices are listed in order of decreasing collector/emitter breakdown voltage VCE0 ,


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    BCY65EP MPS3642 BCY77P BCY59P MPS2222A BCY78P MPS2907 MPS3641 2N4123 2N4125 MPS2714 2N4400 2N4401 BCY77P BCY79P MPS2907A PDF

    2N2102

    Abstract: 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89 2N2905A complement
    Text: NPN SWITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed sw itching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


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    2N3262 T0-39 T0-18 ZTX310 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88 ZT89 2N2905A complement PDF

    transistor t2a

    Abstract: 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 BSV24 BSV25
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics M axim um Ratings Type No. v CBO VCER Vebo P to t 25°C smb. fT min. Storajje Time t s ( i nax.) at l c mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200


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    BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a 2n2206 TRANSISTOR ztx312 transistor 2N2475 N706A BSX12 2N2206 J 2N2369 PDF

    2N2219 transistor

    Abstract: BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A 2N4036 BFX29
    Text: PNP SWITCHING TABLE 4 - SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


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    T0-18 2N4036 2N2102 BFX30 ZTX310 2N2907A 2N2907 BCY70 BCY71 BCY72 2N2219 transistor BSV16 2N2102 2N2218A 2N2219A 2N2904A 2N2905A 2N2906A BFX29 PDF

    2N2102

    Abstract: 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89
    Text: PNP LOW LEVEL TABLE 2 - PNP SILICON PLANAR LOW LEVEL TRANSISTORS The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er am plification from D C to radio frequencies in Com mercial, Industrial and M ilitary


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    ZTX310 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 2N2102 2N4036 BC141 BC161 BCY65E BCY77 BSV16 ZT211 ZT89 PDF

    transistor t2a

    Abstract: NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA BSV23
    Text: SILICON TRANSISTORS Planar Epitaxial High Speed Switching n-p-n Characteristics Maximum Ratings Type No. v CBO VCER Vebo Ptot 25°C smb. fT min. Storajje Time ts (i nax.) at lc mA MHz nS 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 20 150 150 10 200 200


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    BSY95A ZTX310, BSV23 ZTX311 BSV24 ZTX312, BSV25 ZTX313, BSV26 ZTX314, transistor t2a NPN transistor 2n2222A st 2n 2907a ZTX310 ZDT- 5V BSV27 J 2N2369 ZTX312 DATA ZTX313 DATA PDF

    2N2222 MPS2222

    Abstract: 2N2222 MPS2222 npn transistor ZTX312 ZTX313
    Text: TABLE 4 : PNP SWITCHING Max V CE satl Min h FE Max 'c V mA M PS2907A 60 600 BCY77P 60 100 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY65EP BCY79P 45 200 0.25 10 0.25 120 460 2 180* 10 85 150 10 BCY59P 2N4403 40 600 0.4 150 15 100 300 150 200 20 35 255 150 2N4401


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    2N2222 hfe

    Abstract: 2N2222 chip ztx313 BCY71 2N2218 2N2219 2N2221 2N2222 2N2904 2N2906
    Text: NPN SWITCHING M ax VCE sat| at Max Type V CEO Continued f T Min at h FE at P acksQ S 'c •c •b Min Max •c ton 'c . mA MHz mA ns mA mA 0.35 150 15 40 150 50 150 15 40 0.4 150 15 100 800 0.4 150 15 40 120 30 800 0.4 150 15 100 ZT80 25 500 0 .2 10 2 38 ZT87


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    BFY51 2N2218 2N2904 2N2219 2N2905 2N2221 2N2906 2N2222 2N2907 ZT180 2N2222 hfe 2N2222 chip ztx313 BCY71 2N2904 2N2906 PDF

    BFS98

    Abstract: MPS3645 2N3906 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06
    Text: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


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    ZTX453 ZTX452 ZTX4403 /2N4401 \ZTX4401 2N4402 ZTX4402 /2N4400 \ZTX4400 MPS2907 BFS98 MPS3645 2N3906 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06 PDF

    2N2222 MPS2222

    Abstract: 2N2222 MPS2222 npn transistor ZTX313 ZTX312 2N2222 BCy71 NPN switching transistor 2N4403 2N4400 2N4401 2N4402
    Text: TABLE 3 : NPN SWITCHING Max V CE sat Type Max V CEO at 'c Min h FE at fT at Max. Switching Times at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 V BCY59P


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    BCY65EP BCY77P BCY59P BCY79P ZTX360 MPS2222A5 MPS2907A 2N4401 2N4403 2N4400 2N2222 MPS2222 2N2222 MPS2222 npn transistor ZTX313 ZTX312 2N2222 BCy71 NPN switching transistor 2N4403 2N4402 PDF

    transistor 2N3905

    Abstract: 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P BCY79P MPS2907A
    Text: TABLE 3 : NPN SWITCHING M ax V CE sat M ax Type V CEO M in h FE fT Max. Sw itching Times at at at •c mA Iß Min M ax 'c 'c ^on mA m A M H z m A ns at Complement 'c ^off Ic mA 10 BCY77P 10 BCY79P V mA BCY65EP 60 1 00 0 .35 10 0 .25 1 20 4 6 0 2 125 10 1 50 8 0 0


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    BCY65EP BCY77P BCY59P BCY79P ZTX360 MPS2222A5 MPS2907A 2N4401 2N4403 2N4400 transistor 2N3905 2N4402 2N4403 BCY77P BCY79P MPS2907A PDF

    BC557P

    Abstract: BFS60 ZTX304 MPS3645 MPS6566 ZTX551 BC182P BC546P BCY65EP BFS96
    Text: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


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    ZTX453 ZTX452 ZTX4403 /2N4401 \ZTX4401 2N4402 ZTX4402 /2N4400 \ZTX4400 MPS2907 BC557P BFS60 ZTX304 MPS3645 MPS6566 ZTX551 BC182P BC546P BCY65EP BFS96 PDF

    ZTX3904

    Abstract: BFS98 MPS3645 ZTX237
    Text: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


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    2N2222 MPS2222

    Abstract: 2N3906 NPN switching transistor 2N4403 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP BCY77P
    Text: TABLE 3 : NPN SWITCHING Max V CE sat Min fT hFE V CEO Max 'c V mA BCY65EP 60 100 0.35 10 0.25 120 460 2 125 10 150 800 2 125 10 150 800 Type at Max. Switching Times at V at at •c Iß Min Max 'c 'c ^on mA mA mA MHz mA ns BCY59P 45 200 0.35 10 0.25 120 630


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    BCY65EP BCY77P BCY59P BCY79P ZTX360 MPS2222A5 MPS2907A 2N4401 2N4403 2N4400 2N2222 MPS2222 2N3906 NPN switching transistor 2N4403 2N4402 2N4403 BCY77P PDF

    BC546P

    Abstract: BC556P BFS61 BFS98 MPSA06 MPSA56 ZTX451 ZTX452 ZTX453 ZTX551
    Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: A U D IO F REQ U EN C Y A M P L IF IE R S , D R IV E R S and O U T P U T S T A G E S , O S C IL L A T O R S , A N D G E N E R A L P U R P O S E


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    ZTX453 ZTX452 ZTX552 MPSA06 MPSA56 BC546P BC556P ZTX451 100PS2907A MPS2222A BC556P BFS61 BFS98 MPSA56 ZTX551 PDF

    2N2222 MPS2222

    Abstract: 2N3906 ZTX313 ZTX510 2N4400 2N4401 2N4402 2N4403 BCY59P BCY65EP
    Text: TABLE 4 : PNP SWITCHING Max V CE satl Min fT hFE V CEO Max 'c V mA M P S2 9 0 7 A 60 600 BCY77P 60 100 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY65EP BCY79P 45 2 0 0 0 .2 5 10 0 .2 5 120 4 6 0 2 1 8 0 * 10 85 150 10 BCY59P 2 N 4403 40 600 0 .4 150


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    MPS2907A MPS2222AÂ BCY77P BCY65EP BCY79P BCY59P 2N4403 2N4401 2N4402 2N4400 2N2222 MPS2222 2N3906 ZTX313 ZTX510 2N4400 2N4401 BCY59P BCY65EP PDF

    BFS98

    Abstract: ZTX313 ZTX109 ZTX302 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
    Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE


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    ZTX453 ZTX452 ZTX552 MPSA06 MPSA56 BC546P BC556P ZTX451 30-15k 2N3903 BFS98 ZTX313 ZTX109 ZTX302 BC556P BFS61 MPSA56 PDF

    bcy78

    Abstract: BFS98 2N3906 BC559 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA06
    Text: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


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    ZTX453 ZTX452 30-15k ZTX530 BC559P ZTX214 ZTX383 BC184P ZTX384 bcy78 BFS98 2N3906 BC559 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA06 PDF

    audio pre-amplifier bc109

    Abstract: BFS98 for 2n3904 ZTX109 BC182P BC546P BCY65EP BFS61 ZTX114 MPSA05
    Text: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


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    ZTX453 ZTX452 30-15k /2N3904 \ZTX3904 2N3905 ZTX3905 /2N3903 \ZTX3903 audio pre-amplifier bc109 BFS98 for 2n3904 ZTX109 BC182P BC546P BCY65EP BFS61 ZTX114 MPSA05 PDF

    bcy78

    Abstract: BFS98 2N3804 MPS3645 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05
    Text: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:


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    ZTX453 ZTX452 30-15k /2N3904 \ZTX3904 2N3905 ZTX3905 /2N3903 \ZTX3903 bcy78 BFS98 2N3804 MPS3645 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 PDF