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    . MZP-A-2004510

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    Bristol Electronics MZP-A-2004510 175
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    MEMTE MZP A200 4610

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    Chip 1 Exchange MZP A200 4610 1,200
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    Carlo Gavazzi Holding AG MZP A200 4610

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    Chip 1 Exchange MZP A200 4610 1,200
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    Carlo Gavazzi Holding AG MZP A 200 45 05

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    Chip 1 Exchange MZP A 200 45 05 150
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    ZPA200 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZPA200 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF

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    photodiode BPW50

    Abstract: No abstract text available
    Text: SbE D • ^70570 0007DSS 405 H Z E T B S EM IC O N D U C TO R DICE \” 0 \ ZETEX SEMICONDUCTORS PHOTOTRANSISTORS/PHOTODARLINGTON Dice type Description ZM100 Photodarlington ZM110 Phototransistor ZM210 Phototransistor V CEO V CBO V ebo V V 35 35 35 35 35 35


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    PDF 0007DSS ZM100 ZM110 ZM210 BPW41 BPW50 ZPA200 950nm 1K10I 25mmJ photodiode BPW50

    photodiode BPW50

    Abstract: photodiode BPW41 PIN Photodiode BPW50
    Text: SEMICONDUCTOR DICE PHOTOTRANSISTORS/PHOTODARLINGTON Description ZM100 Spectral sensitivity Ip at •CEO a t Geometry VCE=10V VCE=10V range V CEO VcBO V EBO V V V ma iA/i/ft2 nm Photodarlington 35 35 10 1.0 35-160 400-1100 G30 ZM110 Phototransistor 35 35 5


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    PDF ZM100 ZM110 ZM210 BPW41 BPW50 ZPA200 950nm 25mm1 photodiode BPW50 photodiode BPW41 PIN Photodiode

    photodiode BPW50

    Abstract: BPW50 IR photodiode Photodiode Phototransistor zm110 bpw41 IR phototransistor photodiode 5mm photodiode BPW41 ZM110
    Text: SEMICONDUCTOR DICE PHO TO TRANSISTORS/PHOTODARLINGTON Dice type Description V CEO V CBO V EBO V V V Ip at Spectral sensitivity •CEO at Geometry V CE = 10V V CE= 1 0 V range KA jjA/f/ft2 nm ZM 100 Photodarlington 35 35 10 1.0 35-160 4 00-1100 G 30 ZM 110


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    PDF ZM100 ZM110 ZM210 950nm BPW41 25mm2 BPW50 ZPA200 photodiode BPW50 IR photodiode Photodiode Phototransistor zm110 IR phototransistor photodiode 5mm photodiode BPW41

    photodiode BPW50

    Abstract: BPW50 bpw41 Photo Detectors ZM100 diode 725 bpw filter BPW41D BPW41C BPW50C
    Text: BPW SERIES SILICON PIN PHOTO DIODES A range of PIN photodiodes encapsulated in economical plastic packages which are clear or incorporate a daylight filter which provides sensitivity to infra-red radiation only, with high rejection of wavelengths less than 700nm. The devices have low junction capacitance and thus are capable


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    PDF 700nm. ZM100 ZM110 ZM210 950nm BPW41 25mm2 BPW50 ZPA200 photodiode BPW50 Photo Detectors diode 725 bpw filter BPW41D BPW41C BPW50C