Untitled
Abstract: No abstract text available
Text: SKT 250 THYRISTOR BRIDGE,SCR,BRIDGE Stud Thyristor Line Thyristor NL79 NLL9> NCL9 N ?PP ^PP =SPP =?PP N ;PP ZPP =:PP =;PP 64JN R :?P J F- 1G =ZP[ 4* R Z? ¥DH 7]4 :?PUP;C 7]4 :?PUPZC 7]4 :?PU=:_ 7]4 :?PU=;_ =WPP =`PP 7]4 :?PU=`_ Symbol Conditions 64JN 6C -)1G =ZP[ 4* R =PP FZ?H ¥D[
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64L97
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Untitled
Abstract: No abstract text available
Text: RSSA ZP, CP, U, B SERIES シリコンサージアブソーバ ABD （Avalanche Breakdown Diode） ZP ＣＰ、 Ｕ、 Ｂシリーズは、小サージ耐量から大サージ耐量 まで取り揃えたシリコンサージアブソーバ。用途に応じ静電
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B5007
B5008
B5010
U5022
B5036
U5039
B5056
B5082
U5180
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LRB521G-30T1G
Abstract: LTB521G-30T3G SC-75 VF SOT353
Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB521G-30T1G 1 zApplication Rectifying small power 2 zFeatures 1 Ultra small mold type. 2) Low VF 3) High reliability SOD - 723 1 CATHODE zConstruction Silicon epitaxial planer 2 ANODE zP b - Free pack age is available
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LRB521G-30T1G
60Hz1cyc
330mm
360mm
LRB521G-30T1G
LTB521G-30T3G
SC-75
VF SOT353
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d1718
Abstract: 2SK3943-ZP 2SK3943 MP-25ZP
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3943 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3943-ZP TO-263 MP-25ZP
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2SK3943
2SK3943
2SK3943-ZP
O-263
MP-25ZP)
O-263)
d1718
2SK3943-ZP
MP-25ZP
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transistor NEC D 587
Abstract: 2sk3812 2SK3812-ZP MP-25ZP
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3812 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3812-ZP TO-263 MP-25ZP
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2SK3812
2SK3812
2SK3812-ZP
O-263
MP-25ZP)
O-263)
transistor NEC D 587
2SK3812-ZP
MP-25ZP
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transistor NEC D 587
Abstract: 2SK3811 2SK3811-ZP MP-25ZP
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3811 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3811-ZP TO-263 MP-25ZP
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2SK3811
2SK3811
2SK3811-ZP
O-263
MP-25ZP)
O-263)
transistor NEC D 587
2SK3811-ZP
MP-25ZP
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d1718
Abstract: 2SK3943 2SK3943-ZP MP-25ZP
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3943 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3943 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3943-ZP TO-263 MP-25ZP
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2SK3943
2SK3943
2SK3943-ZP
O-263
MP-25ZP)
O-263)
d1718
2SK3943-ZP
MP-25ZP
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2SK3900
Abstract: nec 41-A D1717 2SK3900-ZP MP-25ZP
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3900 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3900 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3900-ZP TO-263 MP-25ZP
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2SK3900
2SK3900
2SK3900-ZP
O-263
MP-25ZP)
O-263)
nec 41-A
D1717
2SK3900-ZP
MP-25ZP
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B2010
Abstract: No abstract text available
Text: ZP, CP, U, B SERIES SURGE PROTECTIVE DEVICES 7KH6LOLFRQ6XUJH$EVRUEHULVDYDLODEOHLQILYH VHULHVWKDWVXSSRUWWKHFRXQWHUPHDVXUHDJDLQVWD ZLGHUDQJHRIVXUJHIURPORZWRKLJKLQFOXGLQJ GHYLFHPD\DOVREHXVHGDVDFRQVWDQWYROWDJH
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ZL12
Abstract: SS14 ZL10 zp 35 ZP1500 zp200 ZL-10 ZP300 ZP1200 zt75
Text: ZP 普通整流管 Rectifier diodes 我公司可提供管壳额定通态平均 电流 10A-5000A，反向重复峰值电压 100V-4500V的整流二极管。结构上分 螺栓型和平板型。采用风冷或水冷两种 形式散热器，整流二极管主要应用于冶
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0A-5000A
00V-4500V
GB4939JB5837J
B5841-91
ZP100
ZP200
ZP300
ZP1500
ZP2000
ZP2500
ZL12
SS14
ZL10
zp 35
ZP1500
zp200
ZL-10
ZP300
ZP1200
zt75
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scr kp 1800
Abstract: KS600 KP1000 ctk 15-2 KP3000 KP500 kp4000 KS500 KS800 KS20
Text: Contents 1. Phase Control Thyristors 2. Fast Switching Thyristors 3. Fast Frequency Thyristors 4. High Temperature Thyristors 5. Triacs 6. General Rectifier Diodes 7. Fast Recovery Rectifier Diodes 8. High Temperature Rectifier Diodes 9. Soft 10. Small Recovery Diodes
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TN6Q04
Abstract: 2sk4100 2SJ585 2SK4100ls 2SK4101LS INV250 2SK4096LS 2SJ406 2SK3745LS 2SJ584
Text: SANYO Power Transistors Bipolar Transistor Series & Schottky Barrier Diode Series CONTENTS 2ĝ5 ŝTO-220MF Package 6 ŝTO-220FI Package ŝLow-saturation Voltage Transistors 7 ŝTO-220FI5H Package 14 ŝHorizontal Deflection Output Use 8 ŝTO-220ML Package 15
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O-220MF
O-220FI
O-220FI5H
O-220ML
O-126
O-126LP
O-126ML
O-220FI
O-220FI5H-HB
O-220FI5H-HA
TN6Q04
2sk4100
2SJ585
2SK4100ls
2SK4101LS
INV250
2SK4096LS
2SJ406
2SK3745LS
2SJ584
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN6228A N-Channel Silicon M O SFET _ SA%YO 2SK2627 Ultrahigh-Speed Switching Applications Features Package Dimensions •L ow O N -resistan ce. • L ow Q g. unit:mm 2128 [2SK2627] 1 : Gate 2 : Source 3 : Drain SANYO : ZP Bottom view
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ENN6228A
2SK2627
2SK2627]
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2SK243-2
Abstract: SBA160-04ZP 2SJ454 2SK2432 2SK243-4 2SK2436 2sk2533 2SJ456
Text: :m ! • ■ Features ZP package w ith surface m ount area reduced by approxim ately 20%, and thickness by approxim ately 40%, com pared to :hs package S tep-sectioned lead-fram e structure to e lim inate so ld e r bridging resulting in high-quality surface m ounting
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2SJ414
2SJ415
2SJ437
2SJ454
2SJ455
2SJ456
2SJ466
-04ZP
SBA160-04ZP
2SK243-2
SBA160-04ZP
2SK2432
2SK243-4
2SK2436
2sk2533
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BU921ZP
Abstract: BU921ZPFI BU921ZT BU921ZTFI car ignition
Text: • 7^5^537 OQgflSai b ■ •33-ZP\ S G S -T H O M S O N BU921ZP/ZPFI BU921ZT/ZTFI S 6 S-THOMSON 30E D NPN POWER DARLINGTON ADVANCE DATA ■ HIGH RUGGEDNESS ■ INTEGRATED HIGH VOLTAGE ZENER AU TO M O TIV E M A R K E T ■ APPLICATION IN HIGH PERFORMANCE
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BU921ZP/ZPFI
BU921ZT/ZTFI
OT-93
ISOWATT218
O-220
BU921ZP,
BU921ZT,
BU921ZPFI
BU921ZTFI
OT-93,
BU921ZP
BU921ZT
car ignition
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Untitled
Abstract: No abstract text available
Text: S7E I> • TDOnSH D D 0 D 0 7 7 EbT « D I O T T - n - t T ZP Y 1 . . . Z P Y 100 1.3 W,5% DI OT EC E L E K T R O N I S C H E Silicon-Planar-Power-Zener Diodes f o r u s e in s t a b i l i z i n g a n d c l i p p i n g c i r c u i t s w i t h h i g h p o w e r rating.
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zener diode zP
Abstract: Y6 ZENER DIODE Zener diode ZP 56 Zener diode ZPY 75 Zener diode ZPY 30 y39 diode Zener diode ZPY 18 Zener Diode Glass 50v Zener diode ZPY 51 zener diode ZP 33 A
Text: f ^ G en eral ^ S e m i c o n d u c t o r _ ZPY1 thfU ZPY100 ^ Zener Diodes Vz Range 1.0, 3.9 to 100V Power Dissipation 1.3W DO-2Q4AL DO-41 Glass Features • Silicon Planar Power Zener Diodes >For use in stabilizing and clipping circuits with
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ZPY100
DO-41
ZMY10
ZMY100.
10K/box
100lllA
zener diode zP
Y6 ZENER DIODE
Zener diode ZP 56
Zener diode ZPY 75
Zener diode ZPY 30
y39 diode
Zener diode ZPY 18
Zener Diode Glass 50v
Zener diode ZPY 51
zener diode ZP 33 A
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ZP33A
Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Text: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=
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00-4KQ
DO-34
RB441Q
RB721Q
DO-340USD]
RB100A
T0220FP
RB015T-40
R8026T-40
1N4146
ZP33A
TZP33A
zp 33a
1n9638
zp 278
1N52438
TZP10A
MTZJ 188
MTZJ 248
1N6233
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ZPU200
Abstract: BKC Semiconductors zpy36 melf 117T DO-213AB ZPU100 ZPY10 ZPY100 ZPY 56 V zener zpy 12
Text: DO-41 1.3 Watts Zener Diodes ZPY3.9/100 ZPU100/200 Families Use Advantages European Pro-Electron type specifications, now available from a US location. Ideal for use as low cost, general purpose regulators and protection devices. Used in hostile environments where long term reliability is important.
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DO-41
ZPU100/200
LL-41
DO-213AB)
ZPY47
ZPY51
ZPY56
ZPY62
ZPY68
ZPU200
BKC Semiconductors
zpy36 melf
117T
DO-213AB
ZPU100
ZPY10
ZPY100
ZPY 56 V
zener zpy 12
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ZENER 18- 2 5t
Abstract: Zener diode ZPY 30 Zener diode ZPY 75 zener diode zP ZPY1-ZPY100 Zener diode ZPY 51 zener diode 18 5t Zener diode ZP 56 Diode Zener - ZPY ZENER MARKING C8
Text: ZPY1-ZPY100 SILICON PLANAR POWER ZENER DIODE Features_ • • • • 1.3 W Power Dissipation Reliable Glass Package Planar Die Construction 0.7V - 100V Nominal Zener Voltages P lu s Z P Y l Stabistor I Mechanical Data • • • • •
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ZPY1-ZPY100
DO-41
MIL-STD-202,
tempeY100
DS21404
ZPY1-ZPY100
ZENER 18- 2 5t
Zener diode ZPY 30
Zener diode ZPY 75
zener diode zP
Zener diode ZPY 51
zener diode 18 5t
Zener diode ZP 56
Diode Zener - ZPY
ZENER MARKING C8
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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SBA10Q-O4Y
Abstract: 2SK2439 2SJ40 SK2555 FW106
Text: • Application Examples Synchronous rectifier Mounted Photos Synchronous Rectifier) ■ Electrical Connections ■ SOP8 Guaranteed Source-Wire Fusing Current I d (A.) ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta = 25 C) Package
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SB20W03P
SB30-03P
SB40W
SBA50-04Y
SBA10Q-O4Y
SBA130-04ZP
SBA160-04Y
SBA160-04ZP
250mm2
2SJ469
2SK2439
2SJ40
SK2555
FW106
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zener diode zP
Abstract: zpy 4,7 v Zener diode ZPY 18 Zener diode ZP 56 Zener diode ZPY 51 Zener diode ZPY 75 Zener diode ZPY 16 zener zpy 12 Zener diode ZPY 30 Zener diode ZPY 15
Text: ZPY1 -ZPY100 SILICON PLANAR POWER ZENER DIODE Features_ • • • • 1.3 W Power Dissipation Reliable Glass Package Planar Die Construction 0.7V - 1 00V Nominal Zener Voltages t Mechanical Data • • • • • Case: Glass, DO-41 Leads: Solderable per MIL-STD-202,
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-ZPY100
-100V
DO-41
MIL-STD-202,
DS21404
ZPY1-ZPY100
zener diode zP
zpy 4,7 v
Zener diode ZPY 18
Zener diode ZP 56
Zener diode ZPY 51
Zener diode ZPY 75
Zener diode ZPY 16
zener zpy 12
Zener diode ZPY 30
Zener diode ZPY 15
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BKC Semiconductors
Abstract: ZPu 160 zpu 150
Text: DO-41 1.3 Watts Zener Diodes ZPY3.9/100 ZPU 100/200 Fam ilies Use Advantages European Pro-Electron type specifications, now available from a US location. Ideal for use as low cost, general purpose regulators and protection devices. Used in hostile environments where long term reliability is important.
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DO-41
LL-41
DO-213AB)
BKC Semiconductors
ZPu 160
zpu 150
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