zo103
Abstract: transistors zo103 transistor zo103 xo103 zo103 ma upilex zO51 ZO52 ZO53 ZO1-ZO103
Text: LH168P 309-output TFT-LCD Source Driver IC LH168P DESCRIPTION PIN CONNECTIONS The LH168P is a 309-output TFT-LCD source driver IC which can simultaneously display 262 144 colors in 64 gray scales. TOP VIEW 350-PIN TCP XO1 1 YO1 2 ZO1 3 FEATURES CHIP SURFACE
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LH168P
309-output
LH168P
350-PIN
ZO1/XO103,
YO103,
ZO103
ZO103,
transistors zo103
transistor zo103
xo103
zo103 ma
upilex
zO51
ZO52
ZO53
ZO1-ZO103
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Untitled
Abstract: No abstract text available
Text: CÄTÄLQO_ Æ\\tTOTÎ nF„ rFS.,«. PRODUCT N-CHANNEL ENHANCEMENT MOS FET 600V, 15A, 0.50n SDF15N60 GAF FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • L O W IR LOSSES
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SDF15N60
MIL-S-19500
IF-15A
/dt-100A/
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upc1008c
Abstract: UPC1008 pc1008c ipc-l 1S953 PA49
Text: Analog IC /¿PC 1008 C fi P C 1 8 C 4 i§ i^ iS ? ^ ;^ lH ]5 S // P h a s e -F re q u e n c y D e tc to r S 5?/D iescripticn /iPClOOSC 2 'OVti.tèti&lïït ? + - > / • # > 7 i PLL r <? Ti*L r 7 r <r • o -,« x 7 s - ÿ , 7 7 r < 7 • a - ,< x • ( i M i f t S s u i , A ^ C T t S f 1 s <i « 5 : 7 , <
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uPC1008C
PC1008C
300ii
300ft
300li
ZO-50Q
1S953.
UPC1008
pc1008c
ipc-l
1S953
PA49
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Untitled
Abstract: No abstract text available
Text: FR0OUOT ÂTÂIO' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35G SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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SDF20N60
MIL-S-19500
IF-20A
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ph-200 diode
Abstract: 5082-3040 HP an-922 5082-3040 equivalent 5082-3041 LM 3041
Text: H E W L E T T - P A C K A R D / CflPNTS blE D • 4 4 4 7 5 Ö 4 G D G cì7E3 ^ bl ■ H P A W hp% m U r im H E W LE T T P a c k a rd Stripline PIN Diode Switches/ Attenuators 5082-3040 5082-3041 5082-3340 Features 2 16 0 085 f f ï (0 075) • Low Cost to Use
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MM47564
ph-200 diode
5082-3040
HP an-922
5082-3040 equivalent
5082-3041
LM 3041
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PDF
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1D11A
Abstract: SDF11N100
Text: PRODUCT Æ iitron CÂTÂIO ' N-CHANNEL ENHANCEMENT MOS FET 1000V, 11A , 1.15 n SDF11N100 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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SDF11N100
MIL-S-19500
IF-11A
1D11A
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DIODE A34
Abstract: 5N60 SDF15N60
Text: PRODUCT CATALO' N-CHANNEL ENHANCEMENT MOS FET 600V, 15A, 0.50Q SDF15N60 FEATURES • • • • • • • • GAF RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE OPTIONAL MIL-S-19500
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SDF15N60
MIL-S-19500
IF-15A
300nS.
DIODE A34
5N60
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Untitled
Abstract: No abstract text available
Text: • M302271 00537S1 HGT ■ HAS HARRIS 2 N 6 7 8 4 N -Channel Enhancem ent-M ode Power M OS Field-Effect Transistor August 1991 Package Features TO-2Û5AF BOTTOM VIEW • 2.25A, 200V * rDS on = 1-5 n • S O A is Power-Dlssipation Limited SO URCE • Nanosecond Switching Speeds
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M302271
00537S1
LH0063
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10256K
Abstract: AMAA
Text: 32K x 36 Synchronous SRAM +3.3 V Supply With Clocked, Registered Inputs and Burst Counter FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 9,10,12, and 17 ns The Shaip Synchronous SRAM family employs high speed, kjw-power CMOS designs using a thin-fllm tran
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486/PentiumTM
100-Lead
32-Bit
Access/15
Access/20
LHS2V1036B2-12
64-BIT
52V1036B2-10
LH52V1036B2-9
10256K
AMAA
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A4G1-1500-02
Abstract: 0402-0008-55 A4G1
Text: bei S ty le S IP S IP S iP SIP S iP S IP SIP SIP SIP SIP SIP SIP SIP S IP SIP S IP S IP S IP S iP SIP SIP S iP S IP S IP S tP S IP S iD S IP S IP StP SP SIP SIP S IP S IP S IP S IP S IP S IP S IP S IP S IP S iP S iP SiP S IP S IP S IP S iP SIP S IP S IP S IP
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o-100
40-R0
40-RQ
A4G1-1500-02
0402-0008-55
A4G1
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PDF
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SA630N
Abstract: 5.8 ghz transmitter 8pin SA630D
Text: Product Specification Philips Sem iconductors Single pole double throw SPDT switch NE/SA630 PIN CONFIGURATION DESCRIPTION FEATURES The NE630 is a wideband RF switch fabricated in BiCMOS technology and incorporating on-chip CMOS/TTL compatible drivers. Its primary function is to switch
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NE630
NE/SA630
NE/SA630
FE/SA630
Zo-50ft
100MHz
SA630N
5.8 ghz transmitter 8pin
SA630D
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PDF
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199S
Abstract: 673D SN55LBC173 SN55LBC174
Text: SN55LBC174 QUADRUPLE LOW-POWER DIFFERENTIAL LINE DRIVER SGLS082 - MARCH 1995 • Meets EIA Standard RS-485 • Designed for High-Speed Multipoint Transmission on Long Bus Lines in Noisy Environments Supports Data Rates up to and Exceeding Ten Million Transfers Per Second
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SN55LBC174
SGLS082
RS-485
SN55LBC174
199S
673D
SN55LBC173
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PDF
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ALQQ
Abstract: mosfet M05
Text: Æutran JM 8^4 3 H ,_ product 'i?T L X ^ S 1-3 4 3 5 ^ » FAX : F 4 0 7 * 8 6 3 - S94G N-CHANNEL ENHANCEMENT M05 FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Vo It.(1) VDSS Dra in-Gate Vo 1tage VDGR (Rg s -1-OMo ) (1) Gate-Source Voltage
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IF-10A
i/dt-100A/
ALQQ
mosfet M05
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PDF
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Untitled
Abstract: No abstract text available
Text: PRODUCT P-CHANNEL ENHANCEMENT MOS FET 100V.-12A, 0.3Q SDF9130 SDF9130 JAA JAB FEATURES • RUGGED PACKAGE • H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS • LOW IR LOSSES • LOW THERMAL RESISTANCE
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SDF9130
MIL-S-19500
IF--12A,
03bfibD2
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fet 600V 20A
Abstract: mosfet 600V 20A SDF20N60 1d20a
Text: PRODUCT Æutron CÂTÂL ' N-CHANNEL ENHANCEMENT MOS FET 600V, 20A , 0.35H SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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SDF20N60
MIL-S-19500
IF-20A
300hS.
fet 600V 20A
mosfet 600V 20A
1d20a
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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PDF
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Untitled
Abstract: No abstract text available
Text: MARKTECH 1 ÔE INTERNATIONAL ]> • PHOTOCOUPLER 6N138, 6N139 STTTbSS ÜOQGSE4 3 " P m -a 5 GaAIAs INFRARED+ PHOTO-IC The 6N138 and 6N139 consist of a GaAIAs infrared emitting diode coupled with a split-Darlington output configuration. A high.speed GaAIAs infrared manufactured with a unique
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6N138,
6N139
6N138
6N139
2500Vrms
35/tS
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PDF
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Untitled
Abstract: No abstract text available
Text: PRODUCT CATTALO' Æ u tro n N-CHANNEL ENHANCEMENT MOS FET 600V, 20A, 0.35 0 SDF20N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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OCR Scan
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SDF20N60
SYM80L
IF-20A
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PDF
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Untitled
Abstract: No abstract text available
Text: PRODUCT CÂTÀLQQ_ J a W t x a n , N-CHANNEL ENHANCEMENT MOS FET 900V, 13A, 0.85Q SDF13N90 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES
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SDF13N90
MIL-S-19500
30Diode
IF-13A
di/dt-100A/MS
A3bflb02
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PDF
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TDA 5555
Abstract: B 647 S647
Text: WOñ HEWLETT mifíA PACKARD Low Cost Gigabit Rate Transmit/Receive Chip Set w ith TTL I/Os Technical Data HDMP-1022 Transmitter HDMP-1024 Receiver Features • Virtual Ribbon Cable Replacement • On-Chip Encode / Decode • On-Chip State Machine for Fully Automatic Link
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HDMP-1022
HDMP-1024
Zo-50
I-H50.
TDA 5555
B 647
S647
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PDF
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300f diode
Abstract: mosfet DPAK U3055L SSR3055L
Text: N-CHANNEL LOGIC LEVEL MOSFET SSR3055L/U3055L FEATURES D-PAK • L o w e r R d s ON • • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSR3055L/U3055L
SSR3055L
SSR3055L/SSU3055L
SSU3055L
SEC0N08)
300f diode
mosfet DPAK
U3055L
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PDF
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Untitled
Abstract: No abstract text available
Text: &TDK. Klectrical Characteristics Use Frequency Center Isolation Insertion V. S. W. R. Handling Capacity Weight range freouency Zo-50 Q loss power o f b u ilt-in MHz <MHz) (dB) (dR) re s is te r (») (8) rain max. max. max. 00 PCS 1930^1990 1960 18 0.4 1.3
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Zo-50
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Untitled
Abstract: No abstract text available
Text: PRODUCT Æ utTon CÁTALO' N-CHANNEL ENHANCEMENT MOS FET 50 0V, 24A, 0.25Q SDF24N50 GAF FEATURES • • • • • • • • SCHEMATIC GH D ra in -s ou rc e Vo 1t . 1 D r ai n- Ga te Voltage G GATE DRAIN 3 SO U R C E STANDARD BEND CONFIGURATIONS (1) Ga te - So ur ce Voltage
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SDF24N50
MIL-S-19500
di/dt-100A/
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PDF
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Untitled
Abstract: No abstract text available
Text: DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 900V, 13A, 0 . 85 Q SDF13N90 FEATURES • • • • • • • • GAF RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE OPTIONAL MIL-S-19500
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OCR Scan
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SDF13N90
MIL-S-19500
IF-13A
di/dt-100A/
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PDF
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