zo 405 mf
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030A/D
MRF18030A
MRF18030AR3
MRF18030AS
MRF18030ASR3
zo 405 mf
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400S
Abstract: MRF18030B MRF18030BR3 MRF18030BSR3
Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030B/D
MRF18030BR3
MRF18030BSR3
400S
MRF18030B
MRF18030BSR3
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IRL 724 N
Abstract: IRL 724
Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030BR3 RF Power Field Effect Transistors MRF18030BLR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030BSR3 Designed for GSM and EDGE base station applications with frequencies
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MRF18030B/D
MRF18030BR3
MRF18030BLR3
MRF18030BSR3
MRF18030BLSR3
MRF18030BLSR3
MRF18030B/D
IRL 724 N
IRL 724
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MRF18030ALSR3
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030AR3 RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ASR3 Designed for GSM and EDGE base station applications with frequencies
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MRF18030A/D
MRF18030AR3
MRF18030ALR3
MRF18030ASR3
MRF18030ALSR3
MRF18030ALSR3
MRF18030A/D
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400S
Abstract: MRF18030B MRF18030BR3 MRF18030BSR3
Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030B/D
MRF18030BR3
MRF18030BSR3
400S
MRF18030B
MRF18030BSR3
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030A/D
MRF18030A
MRF18030AR3
MRF18030AS
MRF18030ASR3
MRF18030A/D
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IRL 724 N
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030A/D
MRF18030A
MRF18030AR3
MRF18030AS
MRF18030ASR3
IRL 724 N
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Motorola transistors M 724
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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MRF18030B/D
MRF18030B
MRF18030BR3
MRF18030BS
MRF18030BSR3
Motorola transistors M 724
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400S
Abstract: MRF18030A MRF18030AR3 MRF18030ASR3
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030A/D
MRF18030AR3
MRF18030ASR3
400S
MRF18030A
MRF18030ASR3
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MRF18030A
Abstract: 2019 gain 400S MRF18030AR3 MRF18030ASR3 1003 c2 J1022
Text: MOTOROLA Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18030A/D
MRF18030AR3
MRF18030ASR3
MRF18030A
2019 gain
400S
MRF18030ASR3
1003 c2
J1022
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies
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MRF18030B/D
MRF18030B
MRF18030BR3
MRF18030BS
MRF18030BSR3
MRF18030B/D
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IRL 724 N
Abstract: HC-49/IRL 724 N
Text: Document Number: MRF18030B Rev. 7, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.
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MRF18030B
MRF18030BLR3
MRF18030BLSR3
IRL 724 N
HC-49/IRL 724 N
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MRF18030ALSR3
Abstract: HC-49/IRL 724 N
Text: Freescale Semiconductor Technical Data Document Number: MRF18030A Rev. 8, 5/2006 RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805-1880 MHz.
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MRF18030A
MRF18030ALR3
MRF18030ALSR3
MRF18030ALSR3
HC-49/IRL 724 N
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MRF18030A
Abstract: IRL 724 N 400S MRF18030ALR3 MRF18030ALSR3
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18030A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3
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MRF18030A/D
MRF18030ALR3
MRF18030ALSR3
MRF18030ALR3
MRF18030A
IRL 724 N
400S
MRF18030ALSR3
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MRF18030A
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
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MRF18030A
MRF18030ALR3
MRF18030ALSR3
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IRL 724
Abstract: IRL 724 N MRF18030A
Text: Freescale Semiconductor Technical Data MRF18030A Rev. 7, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
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MRF18030A
MRF18030ALR3
MRF18030ALSR3
IRL 724
IRL 724 N
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IRL 724 N
Abstract: MRF18030A 400S MRF18030ALR3 MRF18030ALSR3 1003 c2
Text: Freescale Semiconductor Technical Data Document Number: MRF18030A Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
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MRF18030A
MRF18030ALR3
MRF18030ALSR3
IRL 724 N
MRF18030A
400S
MRF18030ALSR3
1003 c2
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF18030B Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
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MRF18030B
MRF18030BLR3
MRF18030BLSR3
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400S
Abstract: MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF18030BLR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030BLSR3
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MRF18030B/D
MRF18030BLR3
MRF18030BLSR3
MRF18030BLR3
400S
MRF18030B
MRF18030BLSR3
IRL 724 N
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HC-49/IRL 724 N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF18030B Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
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MRF18030B
MRF18030BLR3
MRF18030BLSR3
HC-49/IRL 724 N
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IRL 724 N
Abstract: IRL 724 J906 400S MRF18030B MRF18030BLR3 MRF18030BLSR3
Text: Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.
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MRF18030B
MRF18030BLR3
MRF18030BLSR3
IRL 724 N
IRL 724
J906
400S
MRF18030B
MRF18030BLSR3
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MRF18030A
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF18030A-2 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier
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MRF18030A--2
MRF18030ALSR3
MRF18030A--2
MRF18030A
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zo 405 mf
Abstract: zo 405 m201c
Text: I|CWE<ll-COII| « ¿ g i t MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS I lower Z •U ltra Low impedance for Personal Computer and Storage Equipment • Endurance with ripple current: 1 0 5 t 2000 to 5000 hours •N o n solvent-proof • PET sleeve is also available upon requests
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50Vdc
120Hz)
zo 405 mf
zo 405
m201c
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11T1
Abstract: No abstract text available
Text: CATALDG ITEM ND, YAES18K-I YAES18K-49 YAES18K-3 YAES14K-6 YAES14K-53 YAES14K-8 YAES14K-54 YAES10K-11 YAES10K-56 YAES10K-I2 YAES10K57 YAES10K-13 1 3 4 5 6 7 8 9 10 11 12 WIRE STUD CELER SIZE STR AWG SIZE STRIPES 22-18 #6 RED RED #8 22-18 RED #10 22-18 16-14
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YAES18K-I
YAES18K-49
YAES18K-3
YAES14K-6
YAES14K-53
YAES14K-8
YAES14K-54
YAES10K-11
YAES10K-56
YAES10K-I2
11T1
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