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    MRF18030B Search Results

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    MRF18030B Price and Stock

    Rochester Electronics LLC MRF18030BLSR3

    RF MOSFET 26V NI400
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    DigiKey MRF18030BLSR3 Bulk 7
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    Freescale Semiconductor MRF18030BLSR3

    RF L Band, N-Channel Power MOSFET
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    Rochester Electronics MRF18030BLSR3 210 1
    • 1 $43.59
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    • 1000 $37.05
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    MRF18030B Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF18030B Freescale Semiconductor MRF18030BLR3, MRF18030BLSR3 1.93 - 1.99 GHz, 30 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs Original PDF
    MRF18030BLR3 Freescale Semiconductor GSM/GSM EDGE 1.93-1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030BLSR3 Freescale Semiconductor GSM/GSM EDGE 1.93-1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030BR3 Freescale Semiconductor GSM/GSM EDGE 1.93-1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030BR3 Motorola RF Power Field Effect Transistor Original PDF
    MRF18030BR3 Motorola The Rf Mosfet Line Rf Power Field Effect Transistors N-Channel Enhancement - Mode Lateral Mosfets Original PDF
    MRF18030BS Freescale Semiconductor FET, Enhancement, N Channel, 2 VThreshold Original PDF
    MRF18030BSR3 Freescale Semiconductor GSM/GSM EDGE 1.93-1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFET Original PDF
    MRF18030BSR3 Motorola RF Power Field Effect Transistor Original PDF
    MRF18030BSR3 Motorola THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS Original PDF

    MRF18030B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRL 724 N

    Abstract: ZO 405 marking j9 marking Z4 400S MRF18030B MRF18030BLR3 MRF18030BLSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N ZO 405 marking j9 marking Z4 400S MRF18030B MRF18030BLSR3

    motorola 522-11

    Abstract: j633
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF Suf60 MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 motorola 522-11 j633

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18030B Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030B MRF18030BLR3 MRF18030BLSR3

    400S

    Abstract: MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. RF Power Field Effect Transistors MRF18030BLR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030BLSR3


    Original     		PDF MRF18030B/D MRF18030BLR3 MRF18030BLSR3 MRF18030BLR3 400S MRF18030B MRF18030BLSR3 IRL 724 N

    HC-49/IRL 724 N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF18030B Rev. 6, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 HC-49/IRL 724 N

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 MRF18030B/D

    IRL 724 N

    Abstract: IRL 724 J906 400S MRF18030B MRF18030BLR3 MRF18030BLSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF18030B Rev. 7, 5/2006 RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.


    Original     		PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N IRL 724 J906 400S MRF18030B MRF18030BLSR3

    Motorola transistors M 724

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up


    Original     		PDF MRF18030B/D MRF18030B MRF18030BR3 MRF18030BS MRF18030BSR3 Motorola transistors M 724

    IRL 724 N

    Abstract: HC-49/IRL 724 N
    Text: Document Number: MRF18030B Rev. 7, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 - 1990 MHz.


    Original     		PDF MRF18030B MRF18030BLR3 MRF18030BLSR3 IRL 724 N HC-49/IRL 724 N

    400S

    Abstract: MRF18030B MRF18030BR3 MRF18030BSR3
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030B/D MRF18030BR3 MRF18030BSR3 400S MRF18030B MRF18030BSR3

    IRL 724 N

    Abstract: IRL 724
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18030BR3 RF Power Field Effect Transistors MRF18030BLR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030BSR3 Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF18030B/D MRF18030BR3 MRF18030BLR3 MRF18030BSR3 MRF18030BLSR3 MRF18030BLSR3 MRF18030B/D IRL 724 N IRL 724

    400S

    Abstract: MRF18030B MRF18030BR3 MRF18030BSR3
    Text: MOTOROLA Order this document by MRF18030B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030B/D MRF18030BR3 MRF18030BSR3 400S MRF18030B MRF18030BSR3

    BFG591 amplifier

    Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
    Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN BFG591 amplifier 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23

    stripline directional couplers

    Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
    Text: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,


    Original     		PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		PDF RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		PDF te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier


    Original     		PDF MRF18030BLR3 MRF18030BLSR3

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original     		PDF

    j633

    Abstract: J906 J1022
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18030BR3 MRF18030BSR3 j633 J906 J1022

    Untitled

    Abstract: No abstract text available
    Text: Section Two Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–181


    Original     		PDF MBC13900 MRF281SR1 MRF281ZR1 MRF282SR1 MRF282ZR1 MRF284 MRF284SR1 MRF21090S MRF21120 MRF21120S

    MC9S12XDP384

    Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
    Text: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 3, 2005 SG1000CRQ32005 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product


    Original     		PDF SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb