Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65372-11: 699 to 748 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells RF_OUT
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SKY65372-11:
S2793a
202981B
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74F1056
Abstract: 74F1056SC C1995 M16A b50 diode
Text: 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines This device is designed to suppress negative transients caused by line reflections switching
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74F1056
F1056
74F1056SC
16-Lead
74F1056
74F1056SC
C1995
M16A
b50 diode
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74F1056
Abstract: 74F1056SC M16A 8-bit schottky diode
Text: Revised August 1999 74F1056 8-Bit Schottky Barrier Diode Array General Description Features The 74F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed
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74F1056
74F1056
74F1056SC
16-Lead
MS-012,
74F1056SC
M16A
8-bit schottky diode
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74F1056
Abstract: M16A 74F1056SC
Text: 74F1056 8-Bit Schottky Barrier Diode Array General Description The ’F1056 is an 8-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress negative transients caused by line reflections, switching
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74F1056
F1056
74F1056SC
16-Lead
74F1056
M16A
74F1056SC
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Light-Dependent Resistor specification
Abstract: photoresistor ldr 07 photoresistor LDR 03 photoresistor LDR 5mm 5mm ldr photo resistor LDR 07 CDS LDR 5mm photoresistors cadmium sulfide photoresistor LDR 03 PHOTO RESISTOR
Text: TOKEN GENERAL PURPOSE RESISTORS General Purpose Wire Wound / Fusible Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong
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Photoresistor rohs
Abstract: photoresistor LDR 03 Light-Dependent Resistor specification cadmium sulfide photoresistor photoresistor LDR 1000
Text: TOKEN GENERAL PURPOSE RESISTORS General Purpose Wire Wound / Fusible Resistors Token Electronics Industry Co., Ltd. Taiwan: No. 137, Sec. 1, Chung Shin Rd., Wu Ku Hsiang, Taipei Hsien, Taiwan, R.O.C TEL: 886-2-2981 0109; FAX: 886-2-2988 7487 China: 12F, Zhongxing Industry Bld., Chuangye Rd., Nanshan District, Shenzhen, Guangdong
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ICS853111
Abstract: ICS853111AY MC100EP111 MC100LVEP111 MS-026
Text: PRELIMINARY Integrated Circuit Systems, Inc. ICS853111 LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS
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ICS853111
1-TO-10
ICS853111
1-to-10
853111AY
ICS853111AY
MC100EP111
MC100LVEP111
MS-026
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Untitled
Abstract: No abstract text available
Text: 74SSTUB32868 www.ti.com SCAS835 – JUNE 2007 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST • FEATURES • • • • • • • • Member of the Texas Instruments Widebus+ Family Pinout Optimizes DDR2 DIMM PCB Layout 1-to-2 Outputs Supports Stacked DDR2 DIMMs
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74SSTUB32868
SCAS835
28-BIT
56-BIT
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Untitled
Abstract: No abstract text available
Text: 74SSTUB32868 www.ti.com SCAS835 – JUNE 2007 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST • FEATURES • • • • • • • • Member of the Texas Instruments Widebus+ Family Pinout Optimizes DDR2 DIMM PCB Layout 1-to-2 Outputs Supports Stacked DDR2 DIMMs
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74SSTUB32868
SCAS835
28-BIT
56-BIT
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q28b
Abstract: No abstract text available
Text: 74SSTUB32868A www.ti.com SCAS846 – JULY 2007 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST • FEATURES • • • • • • • • Member of the Texas Instruments Widebus+ Family Pinout Optimizes DDR2 DIMM PCB Layout 1-to-2 Outputs Support Stacked DDR2 DIMMs
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74SSTUB32868A
SCAS846
28-BIT
56-BIT
q28b
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Untitled
Abstract: No abstract text available
Text: 74SSTUB32868A www.ti.com SCAS846 – JULY 2007 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST • FEATURES • • • • • • • • Member of the Texas Instruments Widebus+ Family Pinout Optimizes DDR2 DIMM PCB Layout 1-to-2 Outputs Support Stacked DDR2 DIMMs
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74SSTUB32868A
SCAS846
28-BIT
56-BIT
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p q1a
Abstract: No abstract text available
Text: 74SSTUB32868 www.ti.com SCAS835 – JUNE 2007 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS-PARITY TEST • FEATURES • • • • • • • • Member of the Texas Instruments Widebus+ Family Pinout Optimizes DDR2 DIMM PCB Layout 1-to-2 Outputs Supports Stacked DDR2 DIMMs
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74SSTUB32868
SCAS835
28-BIT
56-BIT
p q1a
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PRELIMINARY ICS853111 ICS853111 Integrated DIFFERENTIAL-TO-2.5V/3.3V LOW SKEW, 1-TO-10 Circuit Systems, Inc. BUFFER LVPECL/ECL FANOUT LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111 is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/
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1-TO-10
199707558G
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WQFN0202-8V
Abstract: No abstract text available
Text: HSG2002 SiGe HBT High Frequency Medium Power Amplifier REJ03G0444-0100 Rev.1.00 Oct.28.2004 Features • High Transition Frequency fT = 28.5 GHz typ. • Low Distortion and Excellent Linearity P1dB at output = +25 dBm typ. f = 5.8 GHz • High Collector to Emitter Voltage
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HSG2002
REJ03G0444-0100
WQFN0202-8V
vo-900
Unit2607
WQFN0202-8V
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Integrated Circuit Systems, Inc. ICS853111A LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111A is a low skew, high performance 1-to-10 Differential-to-2.5V/3.3V LVPECL/ HiPerClockS
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ICS853111A
1-TO-10
853111AY
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ICS853111
Abstract: ICS853111-02 MC100EP111 MC100LVEP111
Text: PRELIMINARY Integrated Circuit Systems, Inc. ICS853111-02 LOW SKEW, 1-TO-10 DIFFERENTIAL-TO-2.5V/3.3V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853111-02 is a low skew, high performance 1 - t o - 10 Differential-to-2.5V/3.3V HiPerClockS
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ICS853111-02
1-TO-10
ICS853111-02
853111AY-02
ICS853111
MC100EP111
MC100LVEP111
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Untitled
Abstract: No abstract text available
Text: LH28F400SU B-ZO FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V Vpp; 3.3 V Vqq - No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time (Vcc = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability - 160 ns Maximum Access Time
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LH28F400SU
49-PIN
J63428
T96108
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hc4351
Abstract: 74hc4053a 74HC4051
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A n alo g M u ltip le x e rs / D e m u ltip le x e rs M C 5 4 /7 4 H C 4 0 5 1 M C 74H C 4052 M C 5 4 /7 4 H C 4 0 5 3 High-Performance Silicon-Gate CMOS The MC54/74HC4051, MC74HC4052 and MC54/74HC4053 utilize sili con—gate CMOS technology to achieve fast propagation delays, low ON
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MC54/74HC4051,
MC74HC4052
MC54/74HC4053
HC4051,
HC4052
HC4053
MC14051B,
MC14052B
MC14053B.
HC4051
hc4351
74hc4053a
74HC4051
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74HC4351
Abstract: Z1 DIODE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C54/74HC4351 M C 54/74H C 4353 Analog M ultiplexers/ D em ultiplexers w ith Address Latch High-Perform ance Silicon-Gate CMOS J SUFFIX CERAMIC PACKAGE CASE 732-03 The MC54/74HC4351, and MC54/74HC4353 utilize silicon-gate CMOS
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MC54/74HC4351,
MC54/74HC4353
DL129
MC54/74HC4351
MC54/74HC4353
HC4351
HC4353
74HC4351
Z1 DIODE
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circuit using 74hc4051
Abstract: HC4051 74HC4053 74HC4051 Motorola MC74HC4052 Germanium Schottky diode hc4053 MC74HC4052 HC4052 HC4351
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A n alog M u ltip le x e rs / D e m u ltip le x e rs M C 5 4 /74 H C 4 0 5 1 M C 74H C 4052 M C 5 4 /7 4 H C 4 0 5 3 High-Performance Silicon-Gate CMOS The MC54/74HC4051, MC74HC4052 and MC54/74HC4053 utilize sili con—gate CMOS technology to achieve fast propagation delays, low ON
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MC54/74HC4051,
MC74HC4052
MC54/74HC4053
HC4051,
HC4052
HC4053
MC14051B,
MC14052B
MC14053B.
HC4051
circuit using 74hc4051
HC4051
74HC4053
74HC4051
Motorola MC74HC4052
Germanium Schottky diode
HC4351
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Avantek UT
Abstract: AVANTEK t-74-13-01
Text: AVANTEK INC QbE Q | A A V A N T E K I E I \ im n b k S| MSA-0170 T-74-13-01 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 70 mil Package Features • • • • Cascadable 500 Gain Block Usable Gain to 4.5 GHz
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MSA-0170
T-74-13-01
device18
Avantek UT
AVANTEK
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Analog M u ltip lexers/ D em u ltip lexers w ith Address Latch M C 54/74H C 4351 M C 54/74H C 4353 High-Performance Silicon-Gate CMOS The M C54/74HC4351, and MC54/74HC4353 utilize silicon-gate CMOS technology to achieve fast propagation delays, low ON resistances, and low
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54/74H
C54/74HC4351,
MC54/74HC4353
C54/74HC4351/D
MC54/74HC4351/D
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FCT1280
Abstract: 072AC 74FCT128
Text: QSFCT280T, 1280T e High Speed CMOS 9-Bit Parity Generator/Checker qs54/74fct28ot q s 54/74f c t i 2bot FEATURES/BENEFITS • QSFCT280BT faster than FAST • QSFCT1280T has 18 enable, registered outputs • Io l = 48 mA COM, 32 mA MIL • TTL-compatible input and output levels
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QSFCT280T,
1280T
QS54A74FCT280T
QS54/74FCT1280T
QSFCT280BT
QSFCT1280T
QSFCT1280BT
QSFCT280/AT/BT
QSFCT1280/AT/BT
FCT1280
072AC
74FCT128
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74HC4052A
Abstract: No abstract text available
Text: MOTOROLA SC {LO G IC} 05 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC4051 MC54/74HC4052 MC54/74HC4053 Advance Information Analog M ultiplexers/ Dem ultiplexers J SUFFIX CERAMIC CASE 620-09 High-Performance Silicon-Gate CMOS The MC54/74HC4051, MC54/74HC4052, and MC54/74HC4053 utilize silicon-gate
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PDF
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MC54/74HC4051
MC54/74HC4052
MC54/74HC4053
MC54/74HC4051,
MC54/74HC4052,
MC54/74HC4053
HC4051,
HC4052,
HC4053
MC14051B,
74HC4052A
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