EP9132
Abstract: EP9144 EP9134 EP9142 EP9131 EE-19 N EP9161 EP9133 EP9135 EP9136
Text: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays ± 10% or ±2 nS† nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 Rise Atten. Time DB% nS Max. Max. 2.5±0.5 3.0±0.5 3.5±0.5
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EP9130
EP9131
EP9132
EP9133
EP9134
EP9135
EP9136
EP9137
EP9138
EP9139
EP9132
EP9144
EP9134
EP9142
EP9131
EE-19 N
EP9161
EP9133
EP9135
EP9136
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MIL-STD-1533
Abstract: 1569P
Text: HI-1569 MIL-STD-1553 / 1760 5V Monolithic Dual Transceiver March 2002 FEATURES DESCRIPTION The HI-1569 is a low power CMOS dual transceiver designed to meet the requirements of MIL-STD-1553 /1760 specifications. The transmitter section of each channel takes
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MIL-STD-1553
HI-1569
HI-1569
AN-500
MIL-STD1553
64-PIN
64PQS
MIL-STD-1533
1569P
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Untitled
Abstract: No abstract text available
Text: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting
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2SK3390
REJ03G0208-0400
PLSS0003ZA-A
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Untitled
Abstract: No abstract text available
Text: HI-1565, HI-1566 MIL-STD-1553 / 1760 5V Monolithic Dual Transceivers April 2007 DESCRIPTION PIN CONFIGURATIONS To minimize the package size for this function, the transmitter outputs are internally connected to the receiver inputs, so that only two pins are required for connection to
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HI-1565,
HI-1566
MIL-STD-1553
HI-1565
HI-1566
44-PIN
44PCS
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Untitled
Abstract: No abstract text available
Text: HI-1567, HI-1568 MIL-STD-1553 / 1760 5V Monolithic Dual Transceivers April 2007 DESCRIPTION PIN CONFIGURATIONS To minimize the package size for this function, the transmitter outputs are internally connected to the receiver inputs, so that only two pins are required for connection to
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HI-1567,
HI-1568
MIL-STD-1553
HI-1567
HI-1568
44-PIN
44PCS
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HI-1567
Abstract: TL1553-45 TQ1553 TQ1553-2 HI-1568 HI-1569
Text: HI-1567, HI-1568 MIL-STD-1553 / 1760 5V Monolithic Dual Transceivers August 2006 DESCRIPTION PIN CONFIGURATIONS To minimize the package size for this function, the transmitter outputs are internally connected to the receiver inputs, so that only two pins are required for connection to
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HI-1567,
HI-1568
MIL-STD-1553
HI-1569
MIL-STD-1553A
MIL-STD-1760,
44-pin
20-PIN
HI-1567
TL1553-45
TQ1553
TQ1553-2
HI-1568
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power supply 5 Volt
Abstract: HI-1565PSI TQ1553 TQ1553-2 HI-1565 HI-1566 TL1553-45 1566C Holt Applications Note AN-500
Text: HI-1565, HI-1566 MIL-STD-1553 / 1760 5V Monolithic Dual Transceivers August 2006 DESCRIPTION PIN CONFIGURATIONS To minimize the package size for this function, the transmitter outputs are internally connected to the receiver inputs, so that only two pins are required for connection to
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HI-1565,
HI-1566
MIL-STD-1553
MIL-STD-1553A
MIL-STD-1760,
44-pin
1565PCI
1565PCT
1566PCI
1566PCT
power supply 5 Volt
HI-1565PSI
TQ1553
TQ1553-2
HI-1565
HI-1566
TL1553-45
1566C
Holt Applications Note AN-500
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MIL-STD-1533
Abstract: No abstract text available
Text: HI-1570 MIL-STD-1553 / 1760 5V Monolithic Dual Variable AmplitudeTransceiver The HI-1570 is a low power CMOS dual +5V transceiver with the ability to vary the amplitude of the transmitter outputs. It is designed to meet the requirements of the MIL-STD-1553 / 1760 specifications.
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HI-1570
MIL-STD-1553
HI-1570
44-PIN
44PCS
MIL-STD-1533
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Untitled
Abstract: No abstract text available
Text: HI-1567, HI-1568 MIL-STD-1553 / 1760 5V Monolithic Dual Transceivers September 2008 DESCRIPTION 44 N/C 43 BUSA 42 BUSA 41 BUSA 40 BUSA 39 VDDA 38 VDDA 37 TXA 36 TXA 35 N/C 34 N/C PIN CONFIGURATIONS The HI-1567 and HI-1568 are low power CMOS dual transceivers designed to meet the requirements of
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HI-1567,
HI-1568
MIL-STD-1553
HI-1567
HI-1568
44-PIN
44PCS
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MAR 618 transistor
Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz
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RD06HVF1
175MHz
175MHz
RD06HVF1
RD06HVFth
MAR 618 transistor
MAR 737
transistor d 1557
transistor mar 618
how to use mos transistor in power circuit
rf transistor mar 8
RD06HVF1-101
100OHM
MITSUBISHI RF POWER MOS FET
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mmic distributed amplifier
Abstract: 84-1LMI NDA-210-D
Text: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-210-D DC-17 GHz 6000045 Rev. A 1 Features Applications • • • • • • • • Reliable low-cost HBT-based design 6 dB Gain, +12.6 dBm P1dB @ 2 GHz High P1dB of +13.4 dBm at 6.0 GHz and +8.5 dBm at 14.0 GHz
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NDA-210-D
DC-17
NDA-210-D
50-Ohm
84-1LMI
10420-F
mmic distributed amplifier
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AT41586
Abstract: AT-41586 AT-41586-BLK AT-41586-TR1 S21E
Text: Low Cost General Purpose Transistors Technical Data AT-41586 Description • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option
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AT-41586
AT-41586
AT41586
5965-8908E
AT-41586-BLK
AT-41586-TR1
S21E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65373-11: 1710 to 1785 MHz High Linearity, Active Bias Low-Noise Variable Gain Amplifier Applications Bypass Control • LTE, WCDMA, GSM wireless infrastructure Low noise, high linearity systems Macro base stations Small cells VGC
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SKY65373-11:
201764C
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RD07MUS2B
Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
transistor jc 817
gp 520 diode
gp 817
RF POWER TRANSISTOR
f763
transistor I 17-13 0773
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RCC1010
Abstract: C 704 diode mmic distributed amplifier 84-1LMI NDA-212
Text: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-212 DC-17 GHz 6000046 Rev. 1 1 Features Applications • • • • • • • • Reliable low-cost HBT-based design 6 dB Gain, +12.6 dBm P1dB @ 2 GHz High P1dB of +13.4 dBm at 6.0 GHz and +8.5 dBm at 14.0 GHz
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NDA-212
DC-17
84-1LMI
10420-F
RCC1010
C 704 diode
mmic distributed amplifier
NDA-212
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MSA-0104
Abstract: msa0104
Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0104 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 0.8 GHz • High Gain: 17.0 dB Typical at 0.5 GHz • Unconditionally Stable k>1 • Low Cost Plastic Package Description
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MSA-0104
MSA-0104
5965-9690E
msa0104
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GO1535
Abstract: GS1528A GS1575A GS9075A
Text: GS1575A / GS9075A HD-LINX II Multi-Rate SDI Automatic Reclocker GS1575A / GS9075A Data Sheet Features GS1575A • • • • • • • • • • • • • • • SMPTE 292M, 259M and 344M compliant Supports data rates of 143, 177, 270, 360, 540, 1483.5,
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GS1575A
GS9075A
GS1575A
270Mb/s
GS1528A
GS9075A
GO1535
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mobile MOTHERBOARD CIRCUIT diagram
Abstract: W48C111 W48C111-17
Text: PRELIMINARY W48C111-17 100-MHz Mobile Motherboard System Clock Features CPU0:1 Skew: . 175 ps • Maximized EMI suppression using Cypress’s Spread Spectrum technology • Power-on default to spread mode
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W48C111-17
100-MHz
48-MHz
318-MHz
66-MHz
28-pin
mobile MOTHERBOARD CIRCUIT diagram
W48C111
W48C111-17
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EP9132
Abstract: EP9134 EP9142 EP9144 EE-19 N EP9131 EP9145 EP9146 EP9147 EP9160
Text: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays + 10% or 12 nSf nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5±0.5 3.010.5 3.5±0.5 4.010.5 4.510.5 5.011.0 6.011.0 7.511.0
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EP9130
EP9160
EP9145
EP9175
EP9131
EP9161
EP9146
EP9176
EP9132
EP9162
EP9134
EP9142
EP9144
EE-19 N
EP9147
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Untitled
Abstract: No abstract text available
Text: 2SK2685 GaAs HEMT HITACHI A D E -208^00 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) • High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) •
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2SK2685
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AnTek
Abstract: No abstract text available
Text: data sheet & AV A NTEK msa-0186 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Features • • • • • • Avantek 86 Plastic Package Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 0.9 GHz High Gain: 17.5 dB typical at 0.5 GHz
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msa-0186
AnTek
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westinghouse scr
Abstract: Westinghouse SCR data westinghouse t607 westinghouse scr t607
Text: 125 A Avg. 200 R M S Up to 1 2 0 0 Volts 10-50 /Js Fast Switching SCR T 607_ _1 3 Inches_ Millimeters Symbol A A, B <t>D E F J M N Q <*>T Z <t>VJ M aXi 7.750 7.750 .063 .980 1.212 .250 3.25 .530 1.040 8.100 8.100 .172 1.090 1.250 .630 .755 1.077
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FAST SWITCHING scr
Abstract: No abstract text available
Text: 2 5 0 A Avg. 4 0 0 R M S Up to 1 2 0 0 Volts 2 5 -6 0 /js Fast S w itc h in g SCR T707_25 Symbol A A, B Millimeters Inches Min. 9.76 10.18 .063 10.00 10.42 .172 1.620 .430 1.490 1.750 .810 Max. 4>D E F J M N Q <t>T Z 4>W 4.000 .530 1.04 .755 1.08 3.100
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mac air
Abstract: No abstract text available
Text: NATIONAL HYBRID, INC. = l\Hï 2200 Smithtown Avenue, Ronkonkoma, NY 11779 516 981 -2400 Sales FAX 516-981 -8888 Mil-Std-1553/1760 Products NHI-1567 Series +5V Monolithic Dual Transceivers Features: Description: Smallest Available, Fully Compliant, Mil-Std-1553A & B, Mil-Std-1760, and
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Mil-Std-1553/1760
NHI-1567
Mil-Std-1553A
Mil-Std-1760,
Mil-Std-883
Mil-Std-1553,
mac air
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