pt 2399
Abstract: 2SC5006 2SC5006-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
2SC5247
Abstract: Smpak
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
D-85622
2SC5247
Smpak
|
2SC5246
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
D-85622
2SC5246
|
MSA-3186-BLKG
Abstract: MSA-3186 MSA-31 MSA-3111 MSA-3111-TR1 MSA-31XX A31x MSA3186-TR1G msa3186 MSA3186-BLK
Text: Products > RF ICs/Discretes > RF ICs > Silicon Amplifiers, Gain Blocks > MSA-3186 MSA-3186 6V Fixed Gain Amp, Improved Gain for 900 MHz Applications Description Lifecycle status: Active Features The MSA-31 is a 6V cascadable 50ohm gain block with high gain. It is targeted for narrow
|
Original
|
PDF
|
MSA-3186
MSA-31
50ohm
900MHz.
MSA-3111,
MSA-31XX
MSA-3186-BLKG
MSA-3186
MSA-3111
MSA-3111-TR1
A31x
MSA3186-TR1G
msa3186
MSA3186-BLK
|
2SC5007
Abstract: 2SC5007-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
TRANSISTOR 0835
Abstract: mmic a08 0836 MSA-0835 MSA-0836 MSA-0836-BLK MSA-0836-TR1
Text: Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0835, -0836 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
|
Original
|
PDF
|
MSA-0835,
MSA-0835
5965-9596E
5988-4741EN
TRANSISTOR 0835
mmic a08
0836
MSA-0836
MSA-0836-BLK
MSA-0836-TR1
|
TRANSISTOR 0835
Abstract: id 0835 45-GP MSA-0835 mmic a08 35 micro-X ceramic Package mmic A08 rf A08 mmic msa0835
Text: Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0835, -0836 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
|
Original
|
PDF
|
MSA-0835,
MSA-0835
5965-9596E
TRANSISTOR 0835
id 0835
45-GP
mmic a08
35 micro-X ceramic Package mmic
A08 rf
A08 mmic
msa0835
|
TRANSISTOR 0835
Abstract: mmic a08 A08 monolithic amplifier id 0835 MSA-0835 GHZ micro-X Package 0836 HP MMIC MSA-0836 MSA-0836-BLK
Text: Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0835, -0836 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.
|
Original
|
PDF
|
MSA-0835,
MSA-0835
TRANSISTOR 0835
mmic a08
A08 monolithic amplifier
id 0835
GHZ micro-X Package
0836
HP MMIC
MSA-0836
MSA-0836-BLK
|
NEC D 586
Abstract: transistor NEC D 587 NT 407 F TRANSISTOR TO 220 741 vtvm transistor NEC D 986 NT 407 F power transistor NEC D 882 p 2SC4885 R13* MARKING TC236
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
NPN/transistor NEC K 2500
Abstract: 2SA1977 2SC3583
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
MSA-0770
Abstract: No abstract text available
Text: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0770 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0␣ GHz • Unconditionally Stable k>1
|
Original
|
PDF
|
MSA-0770
MSA-0770
|
MSA-0770
Abstract: No abstract text available
Text: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0770 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k>1 • Hermetic, Gold-ceramic
|
Original
|
PDF
|
MSA-0770
MSA-0770
5965-9592E
5966-4947E
|
ZL40216
Abstract: No abstract text available
Text: ZL40216 Precision 1:6 LVDS Fanout Buffer Data Sheet February 2013 Ordering Information Features ZL40216LDG1 ZL40216LDF1 Inputs/Outputs • Six precision LVDS outputs • Operating frequency up to 750 MHz Trays Tape and Reel Matte Tin Accepts differential or single-ended input
|
Original
|
PDF
|
ZL40216
ZL40216LDG1
ZL40216LDF1
-40oC
|
Untitled
Abstract: No abstract text available
Text: ZL40216 Precision 1:6 LVDS Fanout Buffer Data Sheet November 2012 Ordering Information Features ZL40216LDG1 ZL40216LDF1 Inputs/Outputs • Six precision LVDS outputs • Operating frequency up to 750 MHz Trays Tape and Reel Matte Tin Accepts differential or single-ended input
|
Original
|
PDF
|
ZL40216
ZL40216LDG1
ZL40216LDF1
-40oC
|
|
|
MSA-0770
Abstract: No abstract text available
Text: MSA-0770 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0770 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block.
|
Original
|
PDF
|
MSA-0770
MSA-0770
5989-2761EN
AV02-1230EN
|
Untitled
Abstract: No abstract text available
Text: MSA-0770 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0770 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain
|
Original
|
PDF
|
MSA-0770
MSA-0770
5966-7947E
5989-2761EN
|
zo 107
Abstract: MSA-0770
Text: Agilent MSA-0770 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd Description The MSA-0770 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit
|
Original
|
PDF
|
MSA-0770
MSA-0770
5966-4947E
5989-2761EN
zo 107
|
12.0.12 300mA transformer
Abstract: transformer 220 to 12-0-12 SMPT0706 12-0-12 1A transformer EPC17 BOBBIN power transformer 12012 slf7745 NLL4532 zo 107 tdk mlf3216
Text: SM Components at a Glance Product name Multilayer Ceramic Chip Capacitor Type or Series Part No. Dimensions (mm) [inches] Shape W T 1 [.039] 0.5 [.020] 0.5 [.020] Class I 0.5 to 330pF Class II 220 to 33000pF 1.6 [.063] 0.8 [.031] 0.8 [.031] Class I 0.5 to 1000pF
|
OCR Scan
|
PDF
|
C1005
CC0402]
C1608
CC0603]
12.0.12 300mA transformer
transformer 220 to 12-0-12
SMPT0706
12-0-12 1A transformer
EPC17 BOBBIN
power transformer 12012
slf7745
NLL4532
zo 107
tdk mlf3216
|
samxon
Abstract: samxon KP Series R132 R133 R135 samxon capacitorS 476 e
Text: KP Series Lug/Snap-in Term inal T y p e i i À / ê ï l M , Lon g Life(^ M on) FEATURES 1. Highly reliable capacitors that withstand under high ripple current. SAM XOn 2. Two or three dimensions with same ratings. SAM XoJ -IOOuF 4 5 o v 3. Aluminum case designed explosion-proof vent.
|
OCR Scan
|
PDF
|
100nF
56000nF
120Hz,
35x25
22x50
25x45
25x40
samxon
samxon KP Series
R132
R133
R135
samxon capacitorS
476 e
|
ZO 150 74
Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
Text: SIEMENS NPN Silicon RF Transistor • For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.
|
OCR Scan
|
PDF
|
Q62702-F788
Bas-135
fi23SbOS
D0b717b
ZO 150 74
ZO 103 MA 75 522
zo 107 MA
10MHZ
BFQ74
VCE0518I
siemens 800 169 O
zo 107
Siemens S7 400
|
BFQ70
Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
PDF
|
VCE051S1
Q62702-F774
fi23SbOS
0Gb7117
BFQ70
zo 107 NA
BFq 98
transistor zo 109
zo 107 MA
ST2C
VCE051S1
bfq 85
zo 107
|
Untitled
Abstract: No abstract text available
Text: HEW LETT PACKARD M SA-0770 M O D A M P C a sca d ab le S ilic o n B ip o la r M o n o lith ic M icro w a ve In te g ra te d C irc u it A m p lifie rs Features • • • • • • 70 mil Package Cascadable 50 Q Gain Block Low Operating Voltage 4.0 V typical Vo
|
OCR Scan
|
PDF
|
SA-0770
MSA-0770
|
Untitled
Abstract: No abstract text available
Text: CL Features 70 mil Package Cascadable 50 i i Gain Block Low Operating Voltage 4.0 V typical Vd 3 dB Bandwidth: DC to 2.5 GHz 13.0 dB typical Gain at 1.0 GHz Unconditionally Stable (k>1) Hermetic, Gold-ceramic Microstrip Package •040 1.02 HMM7SÛM GROUND
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
PDF
|
BFQ70
Q62702-F774
S23SbOS
0Db7117
|