RLZS-2012
Abstract: No abstract text available
Text: = ZnSe WHITE LED = MODEL: RLZS-2012 top LED, 2.0 mm x 1.2 mm x 1.0 mm 1. SPECIFICATION: 1.1 Absolute maximum ratings at Ta=25℃
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RLZS-2012
000hrs
RLZS-2012
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RLZS-1608
Abstract: No abstract text available
Text: = ZnSe WHITE LED = RLZS-1608 Chip type LED, 1.6mm x 0.8mm x 0.6mm 1. SPECIFICATION: 1.1 Absolute maximum ratings at Ta=25℃
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RLZS-1608
000hrs
RLZS-1608
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transistor C3866
Abstract: C3866 C3866* transistor c3866 transistor C3866 FE M7824 FE P C3866 FE P C3866 17 R5509-42 pmt divider circuit
Text: LOW-LIGHT-LEVEL NIR NEAR INFRARED:1.4µm/1.7µm MEASUREMENT PHOTOMULTIPLIER TUBES R5509-42/R5509-72 IN THE NIR with EXCLUSIVE COOLERS APPLICATION EXAMPLE: Photoluminescence measurement Sample 1 SAMPLE TEMPERATURE Sample structure: InAlAs/InGaAs (SQWs)/InP(sub)
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R5509-42/R5509-72
SE-171-41
TPMH1267E02
transistor C3866
C3866
C3866* transistor
c3866 transistor
C3866 FE
M7824
FE P C3866
FE P C3866 17
R5509-42
pmt divider circuit
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MIRL17-900
Abstract: International Technology Exchange Infrared light source mems IR emitter ZnSe INTEX
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
mirl17-900
International Technology Exchange
Infrared light source
mems IR emitter
ZnSe
INTEX
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ZnSe
Abstract: TO8 socket
Text: Quantum Cascade Laser Front: QCLs Back: Set-up examples with exclusive accessories Quantum Cascade Lasers are semiconductor lasers that offer peak emission in the mid-IR range 4 µm to 10 µm . They have gained considerable attention as a new light source for mid-IR applications such as molecular gas analysis.
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SE-164
LQCL2001E04
ZnSe
TO8 socket
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Untitled
Abstract: No abstract text available
Text: MCT photoconductive detectors P3257/P3981/P2750 series Non-cooled type and TE-cooled type suitable for long, continuous operation Features Applications Choice of spectral response up to 12 m The band gap can be adjusted by controlling the composition ratio of HgTe and CdTe. Utilizing this fact, various types are
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P3257/P3981/P2750
B1201,
KIRD1025E13
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Untitled
Abstract: No abstract text available
Text: MCT光導電素子 P3257/P3981/P2750シリーズ 長時間の測定が可能な常温型電子冷却型 特長 用途 さまざまな感度波長範囲 ～12 m HgTeとCdTeの組成比によってバンドギャップが変わります。 分光感度特性の異なるタイプを用意しています。
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P3257/P3981/P2750ã
KIRDA0123JB
KIRDA0045JE
KIRD1025J13
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Untitled
Abstract: No abstract text available
Text: MCT photoconductive detectors P2748/P5274 series Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications Choice of spectral response range up to 25 m The band gap can be adjusted by controlling the composition
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P2748/P5274
KIRD1021E09
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Dewar
Abstract: No abstract text available
Text: MCT photoconductive detectors P2748/P5274 series Dewar type detector with high sensitivity and high-speed response in long wavelength range Features Applications Choice of spectral response range up to 25 m The band gap can be adjusted by controlling the composition
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P2748/P5274
KIRD1021E10
Dewar
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Untitled
Abstract: No abstract text available
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
100mm.
mirl17-900
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Untitled
Abstract: No abstract text available
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
Hig8142
mirl17-900
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Diffractive Diffusers Diffractive diffusers spread and homogenize laser beams over a controlled small angle. This results in a uniform farield intensity proile with very sharp edges and a top-hat
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029112-003-99-14-0410-en
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Diffractive Line Generators Single transverse mode lasers such as many solid-state lasers, diode lasers, gas lasers and frequency double or
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029126-003-99-14-0410-en
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dtgs
Abstract: DTGS detector ADC 24 bit
Text: Analizzatori MB3600 Massima affidabilità e versatilità nel controllo della qualità L‘analizzatore FT-NIR Modello MB3600, brevettato da ABB, si distingue per le sue caratteristiche di robustezza, modularità e facilità d‘uso, che lo rendono uno strumento unico per
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MB3600
MB3600,
MB3600
dtgs
DTGS detector
ADC 24 bit
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Untitled
Abstract: No abstract text available
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
MIRL17-900.
mirl17-900
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Untitled
Abstract: No abstract text available
Text: Pulsed Broadband Infrared Light Source MIRL17-900 Intex has developed a series of unique high-intensity pulsed infrared IR light sources capable of operating at high frequencies. Modulation of the light output is achieved by modulating the input electrical power,
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MIRL17-900
mirl17-900
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FYD-4400
Abstract: PERKINELMER xenon FLASH lamp Lite-Pac arc xenon flash lamps PS-4400 Flashlamp FX-4400 PerkinElmer 1700 PerkinElmer fyd-1150 PERKINELMER FLASH lamp
Text: D A T A S H E E T Optoelectronics FX-4400 High Output Xenon Flashlamp e Pr ry a in lim a at D Description Features Several window materials are available to provide customers with transmission output ranging from 160nm to 20 microns. The new FX-4400 Light Source from
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FX-4400
160nm
FX-4400
PS-4400
D-65199
DS307
FYD-4400
PERKINELMER xenon FLASH lamp
Lite-Pac
arc xenon flash lamps
Flashlamp
PerkinElmer 1700
PerkinElmer fyd-1150
PERKINELMER FLASH lamp
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On the Compression and Blocking Distortion of Semiconductor-Based Varactors
Abstract: No abstract text available
Text: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 On the Compression and Blocking Distortion of Semiconductor-Based Varactors
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ZnSe
Abstract: No abstract text available
Text: LUM E^Utes COLOR/INTENSITY SORTING LIGHT INTENSITY @ 10mA GROIN» LIGHT INTENSITY @ 20mA LIGHT INTENSITY Med @/10rnA GROUP mln. F G H 1 K L M N P Q R S T U V w 0,1 0,2 0,32 05 0,8 1,25 2 3,2 5 B 12,5 20 32 50 80 125 0,2 0,32 A B C O E' F Q H J K L M N P Q
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/10rnA
/20mA
sPa85
ZnSe
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LDD-C514R1
Abstract: LDD-A514R1 LDQ-N516R1-RA LDQ-M512R1 IFR 630 MF 1T4 tube RGB DOT matrix 8x8 LED common anode LDS-AD16RI LDQ-N516R1 LDS-A3914RI
Text: le d -d is p la y s ta b le o f c o n te n ts TABLE OF CONTENTS Page s GENERAL INFORMATION .2 PART NUMBERING S Y S T E M . 3 INTENSITY S E LE C T IO N . . . 5 ELECTRO/OPTICAL LED CHIP
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HgCdTe
Abstract: PA100 ZnSe judson PA-100
Text: E C U I H C T I Z J I v I C J UDSON 3TE J> . S r ie S • 303Db05 00 00235 3 M J U D Short-Wave Mercury Cadmium Telluride Detectors 2 to 5 jam 7-m-m Figure 24-1 Typical Detectivity vs Wavelength for J15TE Series Short-Wave HgCdTe Detectors General J15TE Series "Short-Wave" detectors
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303Db05
J15TE
J1435-Ì
J15TE2-66S
J15TE3-66S
J15TE2
J15TE3
5-66S
HgCdTe
PA100
ZnSe
judson PA-100
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ecl82
Abstract: Pcl82 PH ON 4307 ECL 82 PCL82 tube triode ecl82 ucl82 UCl 82 UCl 82, base bfj 47
Text: PHILIPS |iCL82| TRIODE PENTODE; triode sectlon for use as frame time base oscillator and A.F. ampllfler; pentode seotiori for use as frame output tute and A.F. output tube TRIODE-PENTHODE; la triode pour utillsation comme oscillatrice pour la deviation vertioale et comme amplificatrice
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ecl82
PCL82|
ecl82|
ecl82
Pcl82
PH ON 4307
ECL 82
PCL82 tube
triode ecl82
ucl82
UCl 82
UCl 82, base
bfj 47
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ZnSe
Abstract: No abstract text available
Text: Z&MM^-Utes COLOR/INTENSITY SORTING LIGHT INTENSITY @ 20mA LIGHT INTENSITY @ 10mA GROUP LIGHT INTENSITY Med @/10mA F G H 1 K L M N P Q R S T U V w m ln. max. 0,1 0,2 0,32 0,5 0,8 1,25 2 3,2 5 8 12,5 20 32 50 80 Í25 0,2 0,32 0,5 0,8 1,25 2 3,2 5 & 12,5 20
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/10mA
/20mA
GaAS04sPo
ZnSe
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2N9860
Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N9860
2N3869
2N3880
2N3856
n3860
transistor 2N3
2N3858
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