H31D
Abstract: MP4T243 MP42001 MP4T56800 MP4T6310 MP4T6325 MP4T6365 MP4T645 MP4T6825 MP4T856
Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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SCHOTTKY DIODE SOT-143
Abstract: METAL DETECTOR circuit for make AN1124 HSMS-285x chip diode 047 diode MARKING A1 diode schottky code 10 esd diode a2 on semiconductor marking code sot marking code nt
Text: HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Description Features Avago’s HSMS-285x family of zero bias Schottky detector diodes has been designed and optimized for use in small signal Pin < -20 dBm applications at frequencies below
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HSMS-285x
OT-23/SOT-143
HSMS-282x
HSMS-286x
OT-323
SC70-3
OT-363
SC70-6
SCHOTTKY DIODE SOT-143
METAL DETECTOR circuit for make
AN1124
chip diode 047
diode MARKING A1
diode schottky code 10
esd diode a2
on semiconductor marking code sot
marking code nt
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Power Diode 818
Abstract: ma4e928 "Advanced Semiconductor, Inc" ADVANCED SEMICONDUCTOR ASI3486 HSCH3486
Text: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The ASI 3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES INCLUDE: • Replacement for HSCH3486 and MA4E928series • -56 dBm TSS Typical @ 10 GHz
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ASI3486
HSCH3486
MA4E928series
ASI30203
Power Diode 818
ma4e928
"Advanced Semiconductor, Inc"
ADVANCED SEMICONDUCTOR
ASI3486
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SMS7630
Abstract: SMS7630-040LF
Text: DATA SHEET SMS7630-040LF: 0402 Surface Mount Zero Bias Detector Schottky Diode Applications • Sensitive detector circuits • Sampling circuits • Mixer circuits Features • Zero bias detector height • Industry-standard 0402 footprint • Packages rated MSL1, 260 °C per JEDEC J-STD-020
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SMS7630-040LF:
J-STD-020
SMS7630-040LF
201301C
SMS7630
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MP2073
Abstract: P2052 Part Number MP MP2066 C16E1
Text: Zero Bias Schottky Diodes FEATURES High Sensitivity Detector Without Bias Broadband Operation Through 26 GHz Low 1/f Flicker Noise High Reliability Planar 105 E1 P4 ENVIRONMENTAL RATINGS (Maximum) OperatingTemperature. - - - - - - - -65°Cto+200°C Storage Temperature - - - - - - - - - -65°Cto+200°C
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100mWDerate
at150
MP2073
P2052
Part Number MP
MP2066
C16E1
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WR90 waveguide
Abstract: 10525 WR-90 waveguide
Text: Microwave Detector 10.525 GHz MA86571 V3.00 Features ● ● ● ● ● Low Noise High RF Rectification Efficiency Rugged Construction Zero Bias Schottky Diode No Forward Bias Current is Required TO MATE WITH UG-39U WR-90 WAVEGUIDE 1.82 MAX. 46.228 1.62
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MA86571
UG-39U
WR-90
MA86571
1000OHMS
WR90 waveguide
10525
WR-90 waveguide
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x band diode detector waveguide
Abstract: CME7660-000 DIODE RL 207 8E08 detector doppler ka CDB7619-000 CDC7630-000 RF 207 Silicon Detector Diodes Alpha Industries
Text: Silicon Schottky Barrier Detector Diodes Features 3 Both P–Type and N–Type Low Barrier Silicon Available Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam–Lead and Chip Construction See Also Zero Bias Silicon Schottky Barrier Detector Diodes
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Untitled
Abstract: No abstract text available
Text: Broadband Schottky and Tunnel Diode Detectors combined with high sensitivity. Options available include negative output polarity, positive output polarity, matched pairs, and Square Law response. RLC Electronics’ Zero Bias Detectors are designed for use
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20dBm
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Detector/diode rf
Abstract: MADS-002200-12790T SCHOTTKY DIODE SOT-143 MA4E2200 MA4E2200A1-1141T MA4E2200A-1141T MA4E2200B1-287T MA4E2200B-287T MA4E2200D1-287T MA4E2200D-287T
Text: Also Offering RoHS Compliant Equivalent Parts MA4E2200 Series V3 Surface Mount Zero Bias Schottky Detector Diodes Features • Designed for High Volume, Low Cost Detector Applications • Available in Single, Series Pair and Unconnected Pair Configurations
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MA4E2200
OD-323
OT-23
OT-143
SC-79
Detector/diode rf
MADS-002200-12790T
SCHOTTKY DIODE SOT-143
MA4E2200A1-1141T
MA4E2200A-1141T
MA4E2200B1-287T
MA4E2200B-287T
MA4E2200D1-287T
MA4E2200D-287T
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BAT63-07W
Abstract: No abstract text available
Text: BAT63-07W Silicon Schottky Diode 3 Low barrier diode for detectors up to GHz 4 frequencies For high-speed switching applications Zero bias detector diode 2 1 4 1 3 2 VPS05605 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BAT63-07W
VPS05605
EHA07008
OT343
Jul-06-2001
BAT63-07W
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diode 230
Abstract: IR DETECTOR schottcky Silicon Detector A2S263 detector diode
Text: A2S263 SILICON SCHOTTKY BARRIER DETECTOR DIODE PACKAGE STYLE 01 DESCRIPTION: The ASI A2S263 is a Silicon P-Type Schottcky Barrier Zero Bias Detector Diode Housed in a Hermetically Sealed Glass Package. MAXIMUM RATINGS IC 20 mA VCE 2.5 V PDISS 100 mW @ TC = 25 C
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A2S263
A2S263
80ISS
diode 230
IR DETECTOR
schottcky
Silicon Detector
detector diode
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2086-6000
Abstract: diode DB 03 2086601000 2086-6010-00
Text: Biased and Zero Biased Schottky Detectors With Replaceable Diodes 2086 Series V2.00 Features ● ● ● ● ● High Output Sensitivity Flat Frequency Response Burnout Rating: 100 mW for 2086-6000-00 200 mW for 2086-6010-00 No Bias Required on 2086-6000-00
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CDC7630-000
Abstract: CDC7631-000 DDC2353-000 DDC2353-250 DDC2354-000 DDC2354-250
Text: DATA SHEET DDC, CDC, SMS Series: Zero Bias Silicon Schottky Barrier Detector Diodes Applications x Microwave Integrated Circuits x Detectors Features x High sensitivity x Low video impedance x Packages rated MSL1, 260 qC per JEDEC J-STD-020 Skyworks offers lead Pb)-free, RoHS (Restriction of
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J-STD-020)
200843B
CDC7630-000
CDC7631-000
DDC2353-000
DDC2353-250
DDC2354-000
DDC2354-250
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Untitled
Abstract: No abstract text available
Text: Preliminary DATA SHEET SMS7630-093: 0201 Surface Mount Silicon Schottky Zero Bias Detector Diode Applications S ensitive detector circuits l S ampling circuits l Features l l l l l L ow profile, ultraminiature 0201 surface mount package E xtremely low barrier
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SMS7630-093:
SMS7630-093
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915 MHz RFID
Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
Text: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz
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OT-323
SC-70)
HSMS-285A
HSMS-286A
HSMS-285A
5965-8838E
5966-4282E
915 MHz RFID
METAL DETECTOR circuit for make
IC RFID 2.45 GHz
2.45 GHz single chip transmitter
HSMS-2850
HSMS-286C
100A101MCA50
"zero-bias schottky diode"
mark code t4 diode
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Untitled
Abstract: No abstract text available
Text: ASI3486 ZERO BIAS SCHOTTKY DIODE DESCRIPTION: The AS I3486 is a Silicon Schottky Barrier Diode Designed for High Sensitivity Zero Bias Detector Applications up to 10 GHz. FEATURES INCLUDE: • Replacement for HP H S C H 3486 • -56 dBm TssTypical @ 10 G Hz
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ASI3486
I3486
AS13486
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Alpha Industries pin diodes
Abstract: No abstract text available
Text: Zero Bias Silicon Schottky Barrier Detector Diodes EEAlpha CDC, DDC Series Features • High Sensitivity ■ Low Video Impedance Description Alpha’s series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K-band. The choice of barrier
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHÂF bflE » • «235kD5 ODSlMSb SSt B S I E i SIEM EN S T '03' o! Dioden Diodes HF-Schottky-Diode in Beam Lead Technologie RF Schottky Diode in Beam Lead Technology Zero Bias Zero Bias Type BAT 32 Characteristics TA = 25° C Frequency
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235kD5
OT-23
OT-143
11I181I8I88B
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Untitled
Abstract: No abstract text available
Text: Who mLftM 1 HEW LETT PACKARD Zero Bias Schottky Diode Chip for Hybrid Integrated Circuits Technical Data HSMS-0005 Features • Thermocompression/ Thermosonically Bondable • Gold Metallization • Silicon Nitride Passivation • High Detection Sensitivity
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HSMS-0005
10ver
5963-0918E
5965-1236E
GD14362
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BAT 32 Silicon Schottky Diode • • • • • • RF detector Low-power mixer Zero bias Very low capacitance For frequencies up to 18 GHz HiRel/Mii-tested diodes available ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-A826
fl235bG5
6B35bOS
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ZERO Bias diode
Abstract: 04W06 bat17
Text: SIEMENS BAT 63-099R Silicon Schottky Diodes * Zero bias diode array for mixer and detectors up to GHz frequencies • Crossover ring quad Type Marking BAT 63-099F3SN Ordering Code Pin Configuration Package Q62702-A1105 1= A SO T-143 2=C Maximum Ratings Parameter
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63-099R
Q62702-A1105
T-143
63-099F3SN
BAT17W
BAT17-04.
BAT17-04W.
ZERO Bias diode
04W06
bat17
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Untitled
Abstract: No abstract text available
Text: P B t i GEC P L E S S E Y DC1553/57 SILICON SCHOTTKY X-BAND ZERO BIAS MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be supplied in matched pairs by the
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DC1553/57
400mW
300mW
DC1553
DC1557
100pA
-20dBm)
150pA
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Untitled
Abstract: No abstract text available
Text: A fa Modular Zero Bias Schottky Detectors 7744J Series Description The 7744J series provides a m inim ized, herm etically sealable, 50 ohm module designed especially fo r TEM stripline and m icrostrip Mechanical Outline Top View media. These detectors are ideal com ponents fo r dense packaging
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7744J
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CVB1031
Abstract: cvb1151-000
Text: S ch o ttk y § p I I q Barrier Junction Type C j pF Max. R-p ( fì.) Max. V f @ 1 m A (m V ) M in.-M ax. V B (V) Min. Rv @ Zero Bias (ki2) Typ. § o S- Part Number 1 : ! 33 cT O C/S c/> Silicon Schottky Diode Chips Low P 0.10 40 275-375 2 735 ♦ CDB7619-000
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CDB7619-000
CDB7620-000
CDC7630-000
CDF7621-000
CDF7623-000
CVB1031
CVB1151-000
cvb1151-000
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