Untitled
Abstract: No abstract text available
Text: This product complies with RoHS Directive EU 2002/95/EC . Zener Diodes MAZ8xxxG Series Silicon planar type For stabilization of power supply • Package Extremely low noise voltage caused from the diode (2.4 V to 39V, 1/3 to 1/10 of our conventional MAZ3xxx series)
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2002/95/EC)
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ZD1.8 THRU ZD36 ZENER DIODE ZD1.8 THRU ZD36 ZENER DIODES FEATURES * Compact, 2-pin SOD-323&SOD-123 and 3-pin(SOT-23) mini-mold types for high-density mounting. * High demand voltage range (1.8V~36V) is manufactured on high-efficient non-wire bonding production line.
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OD-323
OD-123)
OT-23)
OT-23
OD-123
OD-323
QW-R601-006
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ZD12 C
Abstract: diode zd33 zener diode zd16 ZD7.5 marKing CA2 sot-23 zd22 ZD75 ZD62 ZD24 ZD6.2
Text: UNISONIC TECHNOLOGIES CO., LTD ZD1.8 THRU ZD36 ZENER DIODE ZD1.8 THRU ZD36 ZENER DIODES FEATURES * Compact, 2-pin SOD-323&SOD-123 and 3-pin(SOT-23) mini-mold types for high-density mounting. * High demand voltage range (1.8V~36V) is manufactured on high-efficient non-wire bonding production line.
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OD-323
OD-123)
OT-23)
OT-23
OD-123
QW-R601-006
ZD12 C
diode zd33
zener diode zd16
ZD7.5
marKing CA2 sot-23
zd22
ZD75
ZD62
ZD24
ZD6.2
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ZD1.8 THRU ZD36 ZENER DIODE ZD1.8 THRU ZD36 ZENER DIODES FEATURES * Compact, 2-pin SOD-323&SOD-123 and 3-pin(SOT-23) mini-mold types for high-density mounting. * High demand voltage range (1.8V~36V) is manufactured on high-efficient non-wire bonding production line.
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OD-323
OD-123)
OT-23)
OT-23
OD-123
OD-323
QW-R601-006
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diode zd33
Abstract: ZD8.2 zener diode zd16 zd22 diode ZD22 ZD33 zener diode marking ES code ZD6,8 ZD12 diode zd12
Text: UTC ZD3.3 THRU ZD36 ZENER DIODE ZD3.3 THRU ZD36 ZENER DIODES 1 2 3 SOT-23 1 2 SOD-323 SOT-23: 1. NC 2. Anode 3. Cathode SOD-323: 1. Anode 2. Cathode *Pb-free plating product number: ZD3.3L THRU ZD36L THERMAL CHARACTERISTICS PARAMETER Total Device Dissipation
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OT-23
OD-323
OT-23:
OD-323:
ZD36L
QW-R601-003
diode zd33
ZD8.2
zener diode zd16
zd22
diode ZD22
ZD33
zener diode marking ES code
ZD6,8
ZD12
diode zd12
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Diode marking TY
Abstract: GE 027
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MALD068XG Silicon planar type For ESD protection • Package MALD068XG is optimal for cell phones and AV application, all types of I/O circuits. It is possible to protect against forward and reverse surges.
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EU2002/95/EC)
MALD068XG
IEC61000-4-5
IEC61000-4-2
150mWachievedwithaprintedcircuitboard.
Diode marking TY
GE 027
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Untitled
Abstract: No abstract text available
Text: Z1SMA6V2 . Z1SMA240 1.3 W Surface Mount Glass Passivated Zener Diode DO-214AC SMA Current 1.3 W Voltage 6.2 to 240 V R FEATURES Low profile package Ideal for automated placement Low leakage current High surge current and zener capability
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Z1SMA240
DO-214AC
AEC-Q101
2011/65/EU
2002/96/EC
J-STD-020,
Apr-13
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Zener diode smd marking code WN
Abstract: smd code YC 228 smd zener diode code WH W8 smd code YC 447 z017 zener SMD WA Zener diode smd marking code wa marking code WL SMD zener CZRW5221B Zener diode smd marking code wp
Text: COAICHII» SMD Zener Diodes SMO D io d es Specialist CZRW52C2V4-G Thru Voltage 2.4 to 39 Volts Power 410 mWatts RoHS Device CZRW52C39-G S O D -1 2 3 Features • 4 10m W Power Dissipation • Zen er Voltages from 2 .4 ~ 3 9 V • P lanar Die Constructions.
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CZRW52C2V4-G
CZRW52C39-G
CZRW5221B
CZRW5259B)
Zener diode smd marking code WN
smd code YC 228
smd zener diode code WH W8
smd code YC 447
z017
zener SMD WA
Zener diode smd marking code wa
marking code WL SMD zener
Zener diode smd marking code wp
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Z30-15B
Abstract: 115B zener diode DS-222719 zener diode cross reference Z30-300B Z3027 Z30-210B Z30-11B Z30-75B Z3062
Text: Formosa MS Zener Diode Z30-11B THRU Z30-330B List List. 1 Package outline. 2 Features. 2
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Z30-11B
Z30-330B
MIL-STD-750D
METHOD-1051
125oC
METHOD-1056
METHOD-4066-2
1000hrs.
Z30-15B
115B zener diode
DS-222719
zener diode cross reference
Z30-300B
Z3027
Z30-210B
Z30-75B
Z3062
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zener diode marking ES code
Abstract: Z1SMA10 Z1SMA11 Z1SMA12 Z1SMA13 Z1SMA15 Z1SMA16 Z1SMA18 Z1SMA20 Z1SMA200
Text: Z1SMA6V2 . Z1SMA200 1.3 W Surface Mounted Glass Passivated Zener Diode Dimensions in mm. CASE: SMA/DO-214AC Voltage 6.2 to 200 V Power 1.3 W 5.1 ± 0.3 1.25 ± 0.25 1.25 ± 0.25 • Glass passivated junction • The plastic material carries U/L 94 V-0
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Z1SMA200
SMA/DO-214AC
EIA-RS-481)
zener diode marking ES code
Z1SMA10
Z1SMA11
Z1SMA12
Z1SMA13
Z1SMA15
Z1SMA16
Z1SMA18
Z1SMA20
Z1SMA200
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diode MARKING CODE A9
Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Text: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"
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OCR Scan
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160-i
f-1SS349--
SS181
SS184
SS187
SS190
1SS307
SS193
HN2D01P
HN1D01F
diode MARKING CODE A9
02CZ6
02CZ2
s32 schottky diode
SS322
46/SMC 5/L4F1 DIODE
List of Marking
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marking code fz
Abstract: Z1SMA11 Z1SMA12 Z1SMA13 Z1SMA15 Z1SMA16 Z1SMA18 Z1SMA20 Z1SMA10 zener diode marking ES code
Text: Z1SMA6V2 . Z1SMA240 1.3 W Surface Mounted Glass Passivated Zener Diode Dimensions in mm. CASE: SMA/DO-214AC Voltage 6.2 to 240 V Power 1.3 W 5.1 ± 0.3 1.25 ± 0.25 1.25 ± 0.25 • Glass passivated junction • The plastic material carries U/L 94 V-0
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Z1SMA240
SMA/DO-214AC
EIA-RS-481)
marking code fz
Z1SMA11
Z1SMA12
Z1SMA13
Z1SMA15
Z1SMA16
Z1SMA18
Z1SMA20
Z1SMA10
zener diode marking ES code
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maz8056gml
Abstract: MAZ8068GML MAZ8100GLL MAZ8043GML maz8160g MAZ8043GHL MAZ8180GML mAZ8039GHL MAZ8062 MAZ8200G
Text: This product complies with RoHS Directive EU 2002/95/EC . Zener Diodes MAZ8xxxG Series Silicon planar type For stabilization of power supply • Package Extremely low noise voltage caused from the diode (2.4 V to 39V, 1/3 to 1/10 of our conventional MAZ3xxx series)
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2002/95/EC)
maz8056gml
MAZ8068GML
MAZ8100GLL
MAZ8043GML
maz8160g
MAZ8043GHL
MAZ8180GML
mAZ8039GHL
MAZ8062
MAZ8200G
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MP4015
Abstract: No abstract text available
Text: MP4015 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type Four Darlington Power Transistors in One MP4015 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive Unit: mm Inductive Load Switching • Small package by full molding (SIP 10 pins)
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MP4015
MP4015
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smd diode 2ba
Abstract: yt 1208 diode Zener diode smd marking code WN Zener diode smd marking code nu DIODE smd marking CODE NZ Zener diode smd marking code .18 marking code y2 SMD Transistor marking LZ smd diode SOD323 marking code ya SMD Transistor smd diode code B2
Text: PZUxBA series Single Zener diodes Rev. 01 — 19 September 2008 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323 SC-76 very small Surface-Mounted Device (SMD) plastic package. 1.2 Features • Non-repetitive peak reverse power
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OD323
SC-76)
AEC-Q101
smd diode 2ba
yt 1208 diode
Zener diode smd marking code WN
Zener diode smd marking code nu
DIODE smd marking CODE NZ
Zener diode smd marking code .18
marking code y2 SMD Transistor
marking LZ smd diode SOD323
marking code ya SMD Transistor
smd diode code B2
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D2131
Abstract: transistor d2131 2SD2131
Text: 2SD2131 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington 2SD2131 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
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2SD2131
D2131
transistor d2131
2SD2131
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d2536
Abstract: 2SD2536
Text: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)
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2SD2536
d2536
2SD2536
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OP4209A
Abstract: OOBQ
Text: OPA209 OPA2209 OPA4209 www.ti.com SBOS426C – NOVEMBER 2008 – REVISED OCTOBER 2013 2.2nV/√Hz, Low-Power, 36V, Operational Amplifier Check for Samples: OPA209, OPA2209, OPA4209 FEATURES DESCRIPTION • • • • • • • The OPA209 series of precision operational
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OPA209
OPA2209
OPA4209
SBOS426C
OPA209,
OPA2209,
OPA209
130nVPP
18MHz
OP4209A
OOBQ
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Untitled
Abstract: No abstract text available
Text: OPA209 OPA2209 OPA4209 www.ti.com SBOS426C – NOVEMBER 2008 – REVISED OCTOBER 2013 2.2nV/√Hz, Low-Power, 36V, Operational Amplifier Check for Samples: OPA209, OPA2209, OPA4209 FEATURES DESCRIPTION • • • • • • • The OPA209 series of precision operational
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OPA209
OPA2209
OPA4209
SBOS426C
OPA209,
OPA2209,
OPA209
130nVPP
18MHz
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D2695 TRANSISTOR
Abstract: D2695 2SD2695
Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2695
D2695 TRANSISTOR
D2695
2SD2695
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MN638S
Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein
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infringement0718
H1-C01EC0-0110015TA
MN638S
STA464C
sk 3001s
relay Re 04501
spf0001
sta509a
Schottky Diode 80V 6A
2SD2633
sk 5151s
SLA2403M
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PDF
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D2088 TRANSISTOR
Abstract: Transistor D2088 D2088 transistor 2sD2088 2SD2088
Text: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2088
D2088 TRANSISTOR
Transistor D2088
D2088
transistor 2sD2088
2SD2088
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RJP63k2
Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching
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R07CS0003EJ0100
RJP63k2
rjp63f3
rjp30e2
RJP30H2
RJJ0319DSP
rjp63f
RJP30H3
rjj0319
BCR1AM-12A equivalent
RJJ0606
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PDF
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2SD2695
Abstract: D2695 D2695 TRANSISTOR
Text: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
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2SD2695
2SD2695
D2695
D2695 TRANSISTOR
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