BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
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OCR Scan
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2004C
2004S
2004D
Z5250B
T3904
Z5251B
Z5252B
Z5253B
Z5254B
Z5255B
BZX 48c 6v8
PT2369
code Cj5
CMXZ11VTO
7006S
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PDF
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: GAL16V8Z GAL16V8ZD Lattice Zero Power E2CMOS PLD FEATURES FU N C TIO N AL B LO C K D IAG R AM • ZER O PO W ER E2C M O S TEC H N O LO G Y — 100|jA Standby Current — Input Transition Detection on G AL16V8Z — Dedicated Pow er-dow n Pin on G AL16V8ZD — Input and Output Latching During Pow er Down
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OCR Scan
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GAL16V8Z
GAL16V8ZD
AL16V8Z
AL16V8ZD
10MHz)
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PDF
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Untitled
Abstract: No abstract text available
Text: GAL16V8Z GAL16V8ZD Lattica ;Semiconductor I Corporation Zero Power E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES ZERO POWER E2CMOS TECHNOLOGY — 100|iA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down
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OCR Scan
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GAL16V8Z
GAL16V8ZD
Tested/100%
100ms)
10MHz)
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PDF
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Untitled
Abstract: No abstract text available
Text: GAL16V8Z GAL16V8ZD Lattice' ; Semiconductor I Corporation Zero Power E2CMOS PLD Functional Block Diagram Features ZERO POWER E2CMOS TECHNOLOGY — 100 liA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD
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OCR Scan
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GAL16V8Z
GAL16V8ZD
Tested/100%
100ms)
10MHz)
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PDF
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similar ic book
Abstract: No abstract text available
Text: LATTICE SE MICONDUCTOR böE D Bi SBÖbTHT ÜGG5753 S5T « L A T Lattice G A L16V8Z G A L16V8ZD Zero Power E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • ZERO POWER E’ CMOS TECHNOLOGY — 100|iA Standby Current — Input Transition Detection on GAL16V8Z
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OCR Scan
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GG5753
L16V8Z
L16V8ZD
GAL16V8Z
GAL16V8ZD
10MHz)
similar ic book
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PDF
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GAL16V82D
Abstract: No abstract text available
Text: GAL16V8Z GAL16V8ZD ILatticer 5 •! ■ Semiconductor ■■■■Corporation • ZERO POWER E’CMOS TECHNOLOGY — 100|oA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and O utput Latching During Power Down
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OCR Scan
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GAL16V8Z
GAL16V8ZD
Tested/100%
GAL16V8ZD
10MHz)
GAL16V82D
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PDF
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Untitled
Abstract: No abstract text available
Text: GAL16V8Z GAL16V8ZD •ill a ttire :LdlllUC ■■■■■■ Corporation Zero Power E2CMOS PLD FUNCTIONAL BLOCK DIAGRAM FEATURES • ZERO POWER E2CMOS TECHNOLOGY — 100|iA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD
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OCR Scan
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GAL16V
GAL16V8Z
GAL16V8ZD
100ms)
10MHz)
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PDF
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16v8z
Abstract: 16V8ZD
Text: GAL16V8Z GAL16V8ZD I Semiconductor I Corporation Zero Power E2CMOS PLD l/CLK - > - ZERO POWER E2CMOS TECHNOLOGY — 100jjA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down
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OCR Scan
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GAL16V8Z
GAL16V8ZD
100jjA
GAL16V8ZD
Tested/100%
100ms)
16v8z
16V8ZD
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PDF
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P320S
Abstract: F16V8BQ 16v8b pld program 16R8
Text: Features * Industry Standard Architecture - Emulates Many 20-pin PALs - Low-cost Easy-to-use Software Tools * High-speed Electrically-erasable Programmable Logic Devices - 7.5 ns Maximum Pin-to-pin Delay * Several Power Saving Options Device lcc, Standby
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OCR Scan
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20-pin
ATF16V8B
ATF16V8BQ
ATF16V8BQL
0364G
-04/99/X
P320S
F16V8BQ
16v8b
pld program
16R8
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PDF
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P16V8
Abstract: F16V P320S eZI3
Text: Features Industry Standard Architecture - Emulates Many 20-Pin PALs - Low Cost Easy-to-Use Software Tools High-Speed Electrically Erasable Programmable Logic Devices - 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options Device lcc, Stand-By lcc, Active
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OCR Scan
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20-Pin
ATF16V8B
ATF16V8BQ
ATF16V8BQL
0364F--
12/98/xM
P16V8
F16V
P320S
eZI3
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PDF
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ZD 5V6
Abstract: ZD 6v8 6V8A z 5v1 Z14A 5z82 5Z180 7v5, b4ga4,5z
Text: ^ 7 # S G S -T H O M S O N R Æ r a m iO T t M O S SM 5Z 3V3A -> 200A ZENER DIODES NEW SERIE • HIGH SURGE CAPABILITY UP TO : 180W @ 8.3ms ■ LARGE VOLTAGE RANGE : 3.3V -> 200V SURFACE MOUNT TRAN SIL FEATURES ■ A PERFECT PICK AND PLACE BEHAVIOUR ■ AN EXCELLENT ON BOARD STABILITY
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OCR Scan
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RS481)
51SCTIROIM
ZD 5V6
ZD 6v8
6V8A
z 5v1
Z14A
5z82
5Z180
7v5,
b4ga4,5z
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PDF
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L16V
Abstract: 16V8Z
Text: Lattice' GAL16V8Z GAL16V8ZD Zero Power E2CMOS PLD FEATURES • ZERO POWER E2CMOS TECHNOLOGY — 100 jA Standby Current — Input Transition Detection on GAL16V8Z — Dedicated Power-down Pin on GAL16V8ZD — Input and Output Latching During Power Down • HIGH PERFORMANCE E2CMOS TECHNOLOGY
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OCR Scan
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GAL16V8Z
GAL16V8ZD
GAL16V8ZD
GAL16V8Z:
GAL16V8Z-12QP
10MHz)
L16V
16V8Z
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PDF
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IC 7447
Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification BZX284 Series SOD110 Unit: mm Features Total Power Dissipation: Max. 400mW Two Tolerance Series: 2% and cathode idenfifier 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation
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BZX284
OD110
400mW
BZX284
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PDF
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ZVN4310A
Abstract: ZVN4424AC
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 100 Volt vDS * * < W “ °-5Q Spice model available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tarnjj=25°C
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OCR Scan
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Tamy25Â
Tamy-25Â
ZVN4424A/C
ZVN4310A
ZVN4424AC
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PDF
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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PDF
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Untitled
Abstract: No abstract text available
Text: MMSZ4681 – MMSZ4717 500mW SURFACE MOUNT ZENER DIODE WON-TOP ELECTRONICS Pb Features Planar Die Construction 500mW Power Dissipation 2.4V – 43V Nominal Zener Voltage 5% Standard Vz Tolerance Designed for Surface Mount Application
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MMSZ4681
MMSZ4717
500mW
OD-123
OD-123,
MIL-STD-202,
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PDF
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ZFW MARKING
Abstract: 6V8A zdx 1000 marking zfw SM5Z200A ZFW MARKING CODE ZFG 28 zener zfw Zdw 31 ZFW 3-9
Text: SbE D • 7 T 2 T 23 7 □□mS'ì'ì TTD ■ S G T H S G S -T H O M S O N EL[i OT(s *S s 6 s-thomson t-im s t S M 5 Z 3 V 3 A -> 2 0 0 A ZENER DIODES N EW S E R IE ■ HIGH SURGE CAPABILITY UP TO : 180W@ 8.3ms ■ LARGE VOLTAGE RANGE : 3.3V -> 200V S U R F A C E M O U N T T R A N S IL F E A T U R E S
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OCR Scan
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RS481)
ZFW MARKING
6V8A
zdx 1000
marking zfw
SM5Z200A
ZFW MARKING CODE
ZFG 28
zener zfw
Zdw 31
ZFW 3-9
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PDF
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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Original
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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PDF
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BTS550P
Abstract: BTS 550P Q67060-S6952A3 650P q67060s6952a3
Text: PROFET Data Sheet BTS550P Smart Highside High Current Power Switch Reverse Save Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio • Reverse battery protection by self turn on of
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Original
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BTS550P
2000-Mar-24
BTS550P
BTS 550P
Q67060-S6952A3
650P
q67060s6952a3
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PDF
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BB 555
Abstract: BTS550P LOGIC CHIP 650P BTS550P Q67060-S6952A3
Text: PROFET Data Sheet BTS550P Smart Highside High Current Power Switch Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio Reversave • Reverse battery protection by self turn on of
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Original
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BTS550P
2003-Oct-01
BB 555
BTS550P LOGIC CHIP
650P
BTS550P
Q67060-S6952A3
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PDF
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BTS550P LOGIC CHIP
Abstract: 650P BTS550P Q67060-S6952A3 q67060s6952a3
Text: PROFET Data Sheet BTS550P Smart Highside High Current Power Switch Reversave Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current ISO Short circuit current limitation Current sense ratio • Reverse battery protection by self turn on of
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Original
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BTS550P
2000-Mar-24
BTS550P LOGIC CHIP
650P
BTS550P
Q67060-S6952A3
q67060s6952a3
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PDF
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RT8525
Abstract: RT8301 RS845 RS18 r7732 sop24 DS830
Text: RT8301 8-CH Constant Current LED Driver for Display Backlight General Description The RT8301 is a 8-CH constant current sink LED drivers with Dynamic Headroom Control DHC function. RT8301 can provide well current matching ability, adjustable VSET to choose the suitable dropout voltage across the MOS /
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Original
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RT8301
RT8301
DS8301-02
RT8525
RS845
RS18
r7732
sop24
DS830
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PDF
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