1310nm TRANSCEIVER CIRCUIT DIAGRAM
Abstract: 8GHz transceiver specification ZD 410 MF 1310nm photodiode for 10Gbps 1310nm ROSA 10Gbps 1310nm TRANSMITTER CIRCUIT DIAGRAM GR-253-CORE I-64 MF-10KSXA-007ZA SDD11
Text: Mitsubishi Electric Corp. Datasheet MITSUBISHI OPTICAL DEVICES MF-10KSXA-007ZA 10Gbps 1310nm XFP Optical Transceiver XFP Multirate Optical Transceiver MF-10KSXA-007ZA Features: • • • • • • • Protocol Independent 10Gbps transceiver Hot pluggable
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MF-10KSXA-007ZA
10Gbps
1310nm
95Gbps
0957Gbps
30pin
UQ9-07-005
XF-10K)
1310nm TRANSCEIVER CIRCUIT DIAGRAM
8GHz transceiver specification
ZD 410 MF
1310nm photodiode for 10Gbps
1310nm ROSA 10Gbps
1310nm TRANSMITTER CIRCUIT DIAGRAM
GR-253-CORE
I-64
MF-10KSXA-007ZA
SDD11
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ZD 410 MF
Abstract: 8GHz transceiver specification MF-10KSXA-008ZA pin photodiode 1550nm sensitivity 10gbps 1550nm laser diode for 10Gbps MF-10KSXA-009ZA SDD11 mitsubishi rosa mitsubishi receiver Receptacle LC
Text: Mitsubishi Electric Corp. Datasheet MITSUBISHI OPTICAL DEVICES MF-10KSXA-008ZA/009ZA 10Gbps 1550nm XFP Optical Transceiver XFP Multirate Optical Transceiver MF-10KSXA-008ZA MF-10KSXA-009ZA Features: • • • • • • • Protocol Independent 10Gbps transceiver
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MF-10KSXA-008ZA/009ZA
10Gbps
1550nm
MF-10KSXA-008ZA
MF-10KSXA-009ZA
95Gbps
0957Gbps
30pin
UQ9-07-006
ZD 410 MF
8GHz transceiver specification
MF-10KSXA-008ZA
pin photodiode 1550nm sensitivity 10gbps
1550nm laser diode for 10Gbps
MF-10KSXA-009ZA
SDD11
mitsubishi rosa
mitsubishi receiver
Receptacle LC
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equivalent transistor TT 3034
Abstract: DK434 TT 3034 cc 3053 myg 14 CDVM JE02 ZD 410 MF k84h 734E-02
Text: @7A45B "404)C9(0 <43B9)*DD* !"#$%!&'()*+,)-./0121)!3451'657(3)8/09 #$%:9455(;)#,)<./0121)<=;0/';(>(32"(?=;0/';(>(3 "(1B3/'0/65 V73$VG89:(A,3$(0.1),+1430$,30E+02)$)(0.'I7(E+0: $ ( ./:
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7A45B(
Y731d731`
equivalent transistor TT 3034
DK434
TT 3034
cc 3053
myg 14
CDVM
JE02
ZD 410 MF
k84h
734E-02
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R07DS0095EJ0800
Abstract: No abstract text available
Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz Small outline package (WSON0504-2: 5.0 4.0 0.8 mm)
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RQA0011DNS
R07DS0095EJ0800
WSON0504-2:
PWSN0002ZA-B
WSON0504-2>
RQA0011â
R07DS0095EJ0800
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RQA0011
Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz Small outline package (WSON0504-2: 5.0 4.0 0.8 mm)
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RQA0011DNS
WSON0504-2:
R07DS0095EJ0800
PWSN0002ZA-B
WSON0504-2>
RQA0011"
RQA0011
RQA0011DNS
RQA0004
PG890
RQA0011DNSTB-E
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erni 41612
Abstract: No abstract text available
Text: 074484_Cover_neu_A5_2010 29.04.2010 18:08 Uhr Seite U4U11 Catalog ERNI Electronics The Technology Center ERNI Electronics GmbH Seestrasse 9 73099 Adelberg/Germany Tel +49 71 66 50-0 Fax +49 71 66 50-282 info@erni.de Europe South America ERNI Electronics, Inc.
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U4U11
23112/USA
erni 41612
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t07 transistor smd
Abstract: smd transistor 2T6 SMD Transistor t07
Text: • flE35b05 00fll430 T07 ■ SIEMENS PROFET BTS410E2 Smart Highside Power Switch Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation Features • • • • • • • • • • • •
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flE35b05
00fll430
BTS410E2
fl23Sb05
O-220AB/5
410E2
O-22QAB/5,
E3043
Q67060-S6102-A2
410E2
t07 transistor smd
smd transistor 2T6
SMD Transistor t07
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AT49F1025-70VC
Abstract: AT49F1025
Text: Features • Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 8K word Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Word By Word Programming -1 0 ^s/Word Typical Hardware Data Protection
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10x14
AT49F1025
MO-142
AT49F1025-70VC
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WD1010
Abstract: wd10c20 WD2010 disk
Text: WESTERN C O R P O R A DIGITAL T I O N W D10C20-05 Self-Adjusting Data Separator FEATURES • • • PROCESSES ALL SENSITIVE READ/WRITE DATA SIGNALS CMOS TECHNOLOGY DESIGNED FOR ST506/ST412 AND WD1010/ WD2010 INTERFACE ADJUST d d d d d d d d d d d d d V SS
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D10C20-05
ST506/ST412
WD1010/
WD2010
18min
WD1010
wd10c20
disk
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ZD 410 MF
Abstract: No abstract text available
Text: f* ALUMINUM ELECTROLYTIC CAPACITORS n ic h x c o n Chip Type, Higher Capacitance Range U J F jrS M D Long Lile Anti-Solvent Feature Through ’OOVonly • Chip Type, higher capacitance in larger case sizes <j> 12.5, ^ 1 6 , ^ 1 8 , ^ 20) • Designed for surface mounting on high density PC board.
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120Hz,
16X16
18X16
18X21
20X21
16X21
ZD 410 MF
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ZD 410 MF
Abstract: SMD MARKING CODE 4r7
Text: ALUMINUM ELECTROLYTIC CAPACITORS • ■ ■ Chip Type, Higher Capacitance Range n ic ltic o n L I!* ■ series 1i^ l For SMD Long Life Anti-Solvent Feature Through 100V only • Chip Type,higher capacitance in larger case sizes ( ^ 12.5, ^ 16, ^ 18, ^20)
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120Hz,
18X21
16X16
18X16
20X21
ZD 410 MF
SMD MARKING CODE 4r7
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zd 332
Abstract: No abstract text available
Text: n ie lli con ALUMINUM ELECTROLYTIC CAPACITORS SB Chip Type, Higher Capacitance Range series ForSMD 3 Ling Lite Anti-Solvent "eature * Chip Type, higher capacitance in larger case sizes <f>12.5, 16, <p 18, ^2 0 * Designed for surface mounting on high density PC board.
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16X21
20X16
12QHz
120Hz
zd 332
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Untitled
Abstract: No abstract text available
Text: 1- 1 R23A S E R IE S 2600-2000 VOLTS RANGE 450 AUP AVG HOCKEY PÜK D IF F U S E D JU N C TIO N R E C T IF IE R D IO D ES IN T ER N A T IO N A L R E C T IF IE R VOLTAGE RATINGS : i PART I NUMBSR « : i i 1 1 i._ 1 1 t : ï 1 A23ASBA « 1 2800 t R23A24A
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A23ASBA
R23A24A
R23A228
RS3A30S
554S2
Q01Q7flS
4fl554SÂ
00107flb
01STANCS:
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566 pin diagram
Abstract: 734A coaxial cable hp54502a hp3784A TAIS SOT TXC-02021 power combiner broadband transformers HP-3784A 10A ferrite bead b3-z
Text: ART Devices Advanced DS3/STS-1 Receiver/Transmitter ART: TXC-02020 44-Pin ARTE: TXC-02021 (68-Pin) • Single device line interface for DS3 and STS-1 • Single +5V power supply • Meets ‘crossconnect frame’ mask requirements • Adaptive equalization for 0 - 450 ft. of cable
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44-pin
68-pin
102-1ubsection.
TXC-02020-MB
566 pin diagram
734A coaxial cable
hp54502a
hp3784A
TAIS SOT
TXC-02021
power combiner broadband transformers
HP-3784A
10A ferrite bead
b3-z
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WD10C20-05
Abstract: WD2010 WD1010 wd10c20 controller st506 C110 disk drive read write amplifier
Text: WESTERN C O R P O R D IG ITA L A T I O N £ o _L o O 10 o W D10C20-05 Self-Adjusting Data Separator FEATURES • • PROCESSES ALL SENSITIVE READ/WRITE DATA SIG N ALS CM O S TEC HNO LOG Y ADJUST = d d d d d d d d d V SS WGATE RGATE • • • • DESIGNED FOR ST506/ST412 A N D WD1010/
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WD10C20-05
ST506/ST412
WD1010/
WD2010
t18min
WD1010
wd10c20
controller st506
C110
disk drive read write amplifier
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SEM 5027A
Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Text: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES
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E412D
Abstract: information applikation information applikation mikroelektronik applikation heft Mikroelektronik Information Applikation mikroelektronik Heft "Mikroelektronik" Heft mikroelektronik Heft 12 aktive elektronische bauelemente ddr mikroelektronik DDR
Text: innjolkiij ii l _!Il j I h Information Applikation L . i m in i l- c Die vorliegende technische Information dient dea Informati. bedürfnis des Schaltungsentwicklers sowie interessierten Technikers im In- und Ausland eu speziellen aasgewählten Erzeugnissen der Halbleiterbauelemente-Industrie der
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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MARKING CODE SMD JW
Abstract: P600 S8000 time-zone network identification module s8000 DP950
Text: System 8000 ZEUS Administrator Manual 03-3246-04 October, 1983 Copyright 1983 by Zilog Inc. All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means, elec tronic, mechanical, photocopying, recording, or otherwise,
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Untitled
Abstract: No abstract text available
Text: G E C P L E S S E Y «Asm S h M I < O \ I I ] ( ) K s Radiation Hard 1024x4 Bit Static RAM S10306FD S Issue 1.4 O cto ber 1990 Features A3 A4 Ai Ab A# AU • 3}im CMOS-SOS technology • Latch-up free • Fast access time 90ns typical • Total dose 10s rad (Si)
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1024x4
S10306FD
5x1010
1024x4bits
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP15N40CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP15N40CL Internally C lam ped N -C h an n e l IG B T T h is L o g ic L e v e l In s u la te d G a te B ip o la r T ra n s is to r IG B T fe a tu re s G a te - E m itte r E S D p ro te c tio n , G a te C o lle c to r O v e r V oltage P rotection from m on olithic circu itry fo r usage as an Ignition
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MGP15N40CL/D
MGP15N40CL
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B25DC
Abstract: ir e.78996 B25DS E.78996 scr 78996 diode
Text: International HÖR]Rectifier , • 4A55452 0ülbSb3 IT T « I N R INTERNATIONAL RECTIFIER bSE B25DC/DA/DS/CS/JS SCR I SCR and DIODE / SCR Power Modules in B- package Features I Glass passivated junctions fo r greater reliability I E lectrically isolated base plate 3500V RMS
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4A55452
B25DC/DA/DS/CS/JS
B25DC
554S2
GGlbS70
20ohm
65ohm
B25DC
ir e.78996
B25DS
E.78996 scr
78996 diode
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