EM033C08
Abstract: EM033C08N EM02R2
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM033C08 EM033C08 Low Power 32Kx8 SRAM Overview Features The EM033C08 is an integrated memory device containing a low power 256 Kbit Static Random
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EM033C08
32Kx8
EM033C08
EM02R2XX
EM033C08N
EM033C08N
EM02R2
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Q9-001
Abstract: ISO 9001
Text: Integrated Silicon Solution, Inc. ISSI 1940 Zanker Road, San Jose, CA 95112, USA Corporate Registration Includes: Integrated Silicon Solution, Inc. (Shanghai) No. 12-13, Lane 647, Songtao Road, Zhangjiang Hi-Tech Park Pudong New Area, Shanghai, 201203, China
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Q90on.
A12962
Q9-001
ISO 9001
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ES62UL256
Abstract: ES62UL256-25SC ES62UL256-25TC ES62UL256-45SC ES62UL256-45TC
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com ES62UXX256 Family ES62UL256 Family 32Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview The ES62UXX256 is an integrated memory device containing a low power 256 Kbit Static Random
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ES62UXX256
ES62UL256
32Kx8
ES62UL256-45TC
ES62UL256-45SC
ES62UL256-25TC
ES62UL256-25SC
ES62UL256-25SC
ES62UL256-25TC
ES62UL256-45SC
ES62UL256-45TC
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N16T1618A1AZ
Abstract: N16T1618C2AZ N16T1618D1AZ 23183
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N16T1618C2 D1/A1 A Advance Information 16Mb Ultra-Low Power Asynchronous CMOS PSRAM 1M x 16 bit Overview Features The N16T1618C2(D1/A1)A is an integrated
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N16T1618C2
N16T1618A1AZ
N16T1618C2AZ
N16T1618D1AZ
23183
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EM032L08
Abstract: EM032L08T
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM032L08 EM032L08 Family 32Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM032L08 is an integrated memory device containing a low power 256 Kbit Static Random
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EM032L08
EM032L08
32Kx8
EM032L08T
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N18N1825F1B
Abstract: N18N1833F1B N18N3625F1B N18N3633F1B
Text: N18N1825F1B N18N1833F1B N18N3625F1B N18N3633F1B NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs with Fast bus Turnaround FTRAMTM Architecture Features
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N18N1825F1B
N18N1833F1B
N18N3625F1B
N18N3633F1B
133MHz
N18N1825F1BQ-
N18N3625F1BQ-
N18N1833F1BF-
165-FPBGA
N18N3633F1BF-
N18N1833F1B
N18N3633F1B
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chips 69000
Abstract: FR05 69000
Text: &+,36 352'8&7$/ 57 Chips and Technologies, Inc. 2950 Zanker Road San Jose, CA 95134 (408 434-0600 PA337/2-98 Errata for 69000 HiQVideo with Embedded Memory ES1.2 Silicon The anomalies listed below apply to the 69000 ES1.2 silicon revision. This is a preliminary list, which only contains
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PA337/2-98
PA337/2-98
chips 69000
FR05
69000
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N32T1618C1B
Abstract: No abstract text available
Text: N32T1618C1B NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com Advance Information 32Mb Ultra-Low Power Asynchronous CMOS PSRAM 2M x 16 bit Overview Features The N32T1618C1B is an integrated memory
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N32T1618C1B
N32T1618C1B
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EM128L08
Abstract: EM128L08N EM128L08T
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128L08 Advance Information EM128L08 Family 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128L08 is an integrated memory device
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EM128L08
EM128L08
128Kx8
23033-B
EM128L08N
EM128L08T
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TRS-150
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02C1630E1AM Advance Information N02C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View
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N02C1630E1AM
66-Ball
32K-word
128K-words
23134-C
TRS-150
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EM128L08
Abstract: EM128L08N EM128L08T
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128L08 Advance Information EM128L08 Family 128Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128L08 is an integrated memory device
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EM128L08
EM128L08
128Kx8
3033-A
EM128L08T
EM128L08N
EM128L08N
EM128L08T
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Untitled
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02L163WN1A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K x 16bit Overview Features The N02L163WN1A is an integrated memory device containing a 2 Mbit Static Random Access
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N02L163WN1A
16bit
N02L163WN1A
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Untitled
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L163WC2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K x 16 bit Overview Features The N01L163WC2A is an integrated memory device containing a 1 Mbit Static Random Access
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N01L163WC2A
N01L163WC2A
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SANYO TFT
Abstract: 31327 HiQV64 35414 ES11
Text: Chips and Technologies, Inc. 2950 Zanker Road San Jose, CA 95134 408 434-0600 PDU55/8-96 HiQV64 (65554) ES1.1 Silicon Power Measurements The tables that follow show the results of the power measurement tests performed on the 65554 ES1.1 silicon in a
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PDU55/8-96
HiQV64TM
1024x768,
12-bit
800x600,
16-bit
18-bit
Pentium-133
PDU55/8-96
SANYO TFT
31327
HiQV64
35414
ES11
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bga 6x8 tray dimension
Abstract: N04L1618C2A N04L1618C2AB N04L1618C2AT N04L163WC1A
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04L1618C2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview Features The N04L1618C2A is an integrated memory device containing a 4 Mbit Static Random Access
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N04L1618C2A
256Kx16
N04L1618C2A
N04L163WC1A,
bga 6x8 tray dimension
N04L1618C2AB
N04L1618C2AT
N04L163WC1A
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EM128L08
Abstract: N01L083WC2A N01L083WC2AN N01L083WC2AT N01L1618N1A
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L083WC2A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx8 bit Overview Features The N01L083WC2A is an integrated memory device containing a 1 Mbit Static Random Access
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N01L083WC2A
128Kx8
N01L083WC2A
N01L1618N1A,
EM128L08
N01L083WC2AN
N01L083WC2AT
N01L1618N1A
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N04L1618C2A
Abstract: N04L163WC1A N04L163WC1AB N04L163WC1AT
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04L163WC1A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit Overview Features The N04L163WC1A is an integrated memory device containing a 4 Mbit Static Random Access
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N04L163WC1A
256Kx16
N04L163WC1A
N04L1618C2A,
N04L1618C2A
N04L163WC1AB
N04L163WC1AT
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Untitled
Abstract: No abstract text available
Text: N18S1825P1A N18S1833P1A N18S3625P1A N18S3633P1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Pipeline SRAMs Features • • • • • •
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N18S1825P1A
N18S1833P1A
N18S3625P1A
N18S3633P1A
200MHz
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25fv
Abstract: EM128P16B EM128P16T 48-pin TSOP standard dimensions
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128P16 Preliminary EM128P16 Family 128Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128P16 is an integrated memory device
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EM128P16
EM128P16
128Kx16
25fv
EM128P16B
EM128P16T
48-pin TSOP standard dimensions
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N01L1618N1A
Abstract: N01L1618N1AB N01L1618N1AT N01L163WN1A 2313103
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N01L1618N1A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64Kx16 bit Features Overview • Single Wide Power Supply Range 1.65 to 2.2 Volts The N01L1618N1A is an integrated memory
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N01L1618N1A
64Kx16
N01L1618N1A
N01L163WN1A,
N01L1618N1AB
N01L1618N1AT
N01L163WN1A
2313103
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Untitled
Abstract: No abstract text available
Text: N18S1825F1A N18S1833F1A N18S3625F1A N18S3633F1A Advance Information NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com 18Mb High Speed Synchronous Flow-Thru SRAMs Features • • • • • •
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N18S1825F1A
N18S1833F1A
N18S3625F1A
N18S3633F1A
133MHz
N18SXX
100-pin
119-ball
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EM256L08N
Abstract: EM256L08T
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM256L08 Preliminary EM256L08 Family 256Kx8 Bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM256L08 is an integrated memory device
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EM256L08
EM256L08
256Kx8
EM256L08T
EM256L08N
EM256L08N
EM256L08T
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Untitled
Abstract: No abstract text available
Text: DOMESTIC REPS HAWAII MINNESOTA OHIO ALABAMA Centaur North, Inc. D.A. Case Associates, Inc. Midwest Marketing Associates 2 8 9 0 Zanker Road, Ste. 203 San Jo se, CA 9 5 1 3 4 4 0 8 8 9 4 -0 1 8 2 4 6 2 0 W 77th Street Suite # 2 5 0 M inneapolis, M N 5 5 435
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USI6000
Abstract: MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister
Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 This Material Copyrighted By Its Respective Manufacturer
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USI-6000
C31G33
USI6000
MICRON RESISTOR Mos
operational amplifier discrete schematic
transistors cross reference list
transistors cross reference
nmos pmos array
pMOS transistor
transisTOR q106
cmos opamp
photo transister
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