rohm surface mounted transistor series
Abstract: Z1 SOT343 GAS105
Text: AdvancedPreliminary Information Product Description Sirenza Microdevices’ SGA-8143 is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to 6 GHz. The SGA-8143 is optimized for 3V operation but can be biased at 2V for lowvoltage battery operated systems. The device provides high
|
Original
|
PDF
|
SGA-8143
SGA-8143
EDS-102580
rohm surface mounted transistor series
Z1 SOT343
GAS105
|
NEC 09030
Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
Text: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are
|
Original
|
PDF
|
NEM090303M-28
NEM090303M-28
PU10312EJ01V0DS
NEC 09030
8712 RESISTOR
ldmos nec
|
NEM090303M-28
Abstract: NEC 09030
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
PU10312EJ01V0DS
NEM090303M-28
NEM090303M-28
NEC 09030
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
PU10312EJ01V0DS
NEM090303M-28
|
LDMOS 15w
Abstract: TRANSISTOR Z4 ATC100A RO4350 omni spectra
Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 11/28/05 MAPL000817-015C00 Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,
|
Original
|
PDF
|
MAPL000817-015C00
960MHz,
26Vdc,
960MHz
LDMOS 15w
TRANSISTOR Z4
ATC100A
RO4350
omni spectra
|
ATC100a
Abstract: TRANSISTOR Z4 LDMOS 15w OMNI SPECTRA OZ 960 omni spectra sma transistor z9 MAPL-000817-015C00 RO4350 1206cs
Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 1/11/06 MAPL-000817-015C00 Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,
|
Original
|
PDF
|
MAPL-000817-015C00
960MHz,
26Vdc,
960MHz
ATC100a
TRANSISTOR Z4
LDMOS 15w
OMNI SPECTRA
OZ 960
omni spectra sma
transistor z9
MAPL-000817-015C00
RO4350
1206cs
|
atc100a
Abstract: omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5
Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 6/30/05 MAPLST0817-015PP Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz High Gain, High Efficiency and High Linearity Typical P1dB performance at 960MHz,
|
Original
|
PDF
|
MAPLST0817-015PP
960MHz,
26Vdc,
960MHz
atc100a
omni spectra sma
TRANSISTOR Z4
OZ 960
LDMOS 15w
RO4350
25 pin microstrip connector
transistor z9
transistor z5
|
L-Band
Abstract: No abstract text available
Text: FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E060IY is a high power GaAs FET that offers high efficiency,
|
Original
|
PDF
|
FLL21E060IY
2170MHz
FLL21E060IY
L-Band
|
Untitled
Abstract: No abstract text available
Text: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,
|
Original
|
PDF
|
FLL21E135IX
2170MHz
FLL21E135IX
|
ED-4701
Abstract: FLL21E135IX
Text: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,
|
Original
|
PDF
|
FLL21E135IX
2170MHz
FLL21E135IX
ED-4701
|
FLL21E060IY
Abstract: FLL21E06 diode gp 421 ED-4701 ED 17642
Text: FLL21E060IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=41.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E060IY is a high power GaAs FET that offers high efficiency,
|
Original
|
PDF
|
FLL21E060IY
2170MHz
FLL21E060IY
FLL21E06
diode gp 421
ED-4701
ED 17642
|
R15-24
Abstract: 40dBm f1214
Text: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,
|
Original
|
PDF
|
FLL21E045IY
40dBm
2170MHz
FLL21E045IY
R15-24
f1214
|
Untitled
Abstract: No abstract text available
Text: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers
|
Original
|
PDF
|
FLL21E135IX
2170MHz
FLL21E135IX
|
cw 7809
Abstract: RM110 6822 transistor 6822 transistors 6822 ED-4701 FLL21E090IY
Text: FLL21E090IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E090IY is a high power GaAs FET that offers high efficiency,
|
Original
|
PDF
|
FLL21E090IY
43dBm
2170MHz
FLL21E090IY
cw 7809
RM110
6822
transistor 6822
transistors 6822
ED-4701
|
|
|
Z3.7
Abstract: ED-4701 FLL21E045IY
Text: FLL21E045IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=40dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E045IY is a high power GaAs FET that offers high efficiency,
|
Original
|
PDF
|
FLL21E045IY
40dBm
2170MHz
FLL21E045IY
Z3.7
ED-4701
|
cw 7809
Abstract: 6822 FET FLL21E090IY transistor 6822 transistors 6822 ED-4701
Text: FLL21E090IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E090IY is a high power GaAs FET that offers high efficiency,
|
Original
|
PDF
|
FLL21E090IY
43dBm
2170MHz
FLL21E090IY
cw 7809
6822 FET
transistor 6822
transistors 6822
ED-4701
|
omni spectra test fixture
Abstract: RF transistor gain 20dB
Text: RF Power Field Effect Transistor LDMOS, 800—1000 MHz, 2W, 26V 10/31/03 MAPLST0810-002PP Preliminary Features Q Q Q Q Q Package Style Designed for broadband commercial applications up to 1GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion
|
Original
|
PDF
|
MAPLST0810-002PP
960MHz,
26Vdc
960MHz)
omni spectra test fixture
RF transistor gain 20dB
|
2a258 transistor
Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
|
Original
|
PDF
|
DL110/D
2a258 transistor
Fuji Electric tv schematic diagram
smd transistor WB3
VHF FM PLL schematic mc145152
Motorola transistor smd marking codes
MARK 176 SOT363 RF
Note AR164, Motorola RF Device Data, Volume II, D
tip off 0401 mosfet transistor
cordless phone Transceiver IC
semiconductors cross index
|
base station product
Abstract: NEM091203P-28 NEM091203P-28-A ldmos nec
Text: DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM091203P-28 N-CHANNEL SILICON POWER LDMOS FET FOR 135 W UHF-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NEM091203P-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for 850 to 960 MHz applications, such as, GSM/EDGE/N-CDMA cellular base station.
|
Original
|
PDF
|
NEM091203P-28
NEM091203P-28
base station product
NEM091203P-28-A
ldmos nec
|
ATC100B
Abstract: TRANSISTOR Z4 MAPLST1617-030CF
Text: RF Power Field Effect Transistor LDMOS, 1600 — 1700 MHz, 30W, 28V 5/5/05 MAPLST1617-030CF Preliminary Features Package Style Designed for INMARSAT applications in the 1620-1670 MHz frequency band. Typical Two Tone Performance IMD=-30 dBc : Average Output Power: 15W
|
Original
|
PDF
|
MAPLST1617-030CF
1670MHz)
ATC100B
TRANSISTOR Z4
MAPLST1617-030CF
|
atc100a
Abstract: LDMOS 15w transistor amplifier a05t A05T RO4350 0945 transistor
Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 7/27/06 MAPL-000817-015CPC Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz • High Gain, High Efficiency and High Linearity • Typical P1dB performance at 960MHz,
|
Original
|
PDF
|
MAPL-000817-015CPC
960MHz,
26Vdc,
960MHz
atc100a
LDMOS 15w
transistor amplifier a05t
A05T
RO4350
0945 transistor
|
ATC100B
Abstract: dqpsk A05T MAPLST1900-030CF ER254
Text: RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V 10/31/03 MAPLST1900-030CF Preliminary Features Package Style Designed for PHS applications in the 1890-1925 MHz frequency band. Q Q Typical performance in PHS mode at -68 dBc ACPR 600kHz :
|
Original
|
PDF
|
MAPLST1900-030CF
600kHz)
1890MHz)
ATC100B
dqpsk
A05T
MAPLST1900-030CF
ER254
|
ATC100B
Abstract: dqpsk A05T MAPLST1900-060CF omni spectra sma
Text: RF Power Field Effect Transistor LDMOS, 1890 — 1925 MHz, 60W, 26V 10/31/03 MAPLST1900-060CF Preliminary Features Package Style Designed for PHS applications in the 1890-1925 MHz frequency band. Q Q Typical performance in PHS mode at -65 dBc ACPR 600kHz :
|
Original
|
PDF
|
MAPLST1900-060CF
600kHz)
1890MHz)
ATC100B
dqpsk
A05T
MAPLST1900-060CF
omni spectra sma
|
AS5040
Abstract: No abstract text available
Text: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com
|
Original
|
PDF
|
AS5040
10Bit
AS5040
|