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    1N6515US

    Abstract: 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG 1N6512
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/575D 13 August 2009 SUPERSEDING MIL-PRF-19500/575C 8 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH VOLTAGE POWER RECTIFIER,


    Original     		PDF MIL-PRF-19500/575D MIL-PRF-19500/575C 1N6512 1N6519, 1N6512US 1N6519US, MIL-PRF-19500. 1N6515US 1N6513US 1N6517 JV6512 1N6517US 1N6519 z15u Z60UFG Z100UFG

    Untitled

    Abstract: No abstract text available
    Text: Z60UF Z80UF Z100UF HIGH VOLTAGE RECTIFIERS EPOXY MOLDED, 100nS RECOVERY V RWM D1A,M = AXIAL LEADED RR in. mm 6000-10000V = 400mA = 100nS ,200±.015 (5.08±.38) .250±.015(6.35±.38) . .060±.003 (1.52±.06) .40(10.16)Min. ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS


    OCR Scan     		PDF 100nS Z60UF Z80UF Z100UF 000-10000V 400mA 100nS 600mA

    Z60UFG

    Abstract: 1514A Z100UFG
    Text: HIGH VOLTAGE RECTIFIERS 100nS RECOVERY Z60UFG Z80UFG Z100UFG AXIAL LEADED HERMETICALLY SEALED y , = 6000-10000V = 600mA T rr in. mm .400(10.16) Max. = 100nS 1.00(25.4) Min. .215(5.5) Max. •040±.003 (1.02±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RAT NGS


    OCR Scan     		PDF 100nS Z60UFG Z80UFG Z100UFG 000-10000V 600mA 100nS 600mA 50VDC 1514A Z100UFG