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    Z4 3B Search Results

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    Z4 3B Price and Stock

    MOSLEADER RLZ4.3B-ML

    LL34 Commercial Grade
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    DigiKey RLZ4.3B-ML Reel 30,000 250
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    • 1000 $0.01535
    • 10000 $0.0124
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    MOSLEADER RLZ43B-ML

    LL34 Commercial Grade
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RLZ43B-ML Reel 30,000 250
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    • 10000 $0.0124
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    Nexperia PDZ4.3BZ

    DIODE ZENER 4.48V 400MW SOD323
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    DigiKey PDZ4.3BZ Cut Tape 26,860 1
    • 1 $0.11
    • 10 $0.079
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    PDZ4.3BZ Digi-Reel 26,860 1
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    PDZ4.3BZ Reel 24,000 3,000
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    TME PDZ4.3BZ 25
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    Avnet Silica PDZ4.3BZ 8 Weeks 3,000
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    EBV Elektronik PDZ4.3BZ 8 Weeks 3,000
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    Nexperia PDZ4.3B,115

    DIODE ZENER 4.3V 400MW SOD323
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    DigiKey PDZ4.3B,115 Digi-Reel 13,333 1
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    PDZ4.3B,115 Cut Tape 13,333 1
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    PDZ4.3B,115 Reel 9,000 3,000
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    Mouser Electronics PDZ4.3B,115 8,420
    • 1 $0.17
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    Rochester Electronics PDZ4.3B,115 42,000 1
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    TME PDZ4.3B,115 1
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    • 100 $0.0651
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    Avnet Silica PDZ4.3B,115 8 Weeks 3,000
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    Chip1Stop PDZ4.3B,115 20,997
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    PDZ4.3B,115 Cut Tape 11,350
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    EBV Elektronik PDZ4.3B,115 27,000 8 Weeks 3,000
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    Nexperia PDZ4.3B,135

    DIODE ZENER 4.3V 400MW SOD323
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    DigiKey PDZ4.3B,135 Digi-Reel 10,000 1
    • 1 $0.11
    • 10 $0.079
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    PDZ4.3B,135 Reel 10,000 10,000
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    PDZ4.3B,135 Cut Tape 10,000 1
    • 1 $0.11
    • 10 $0.079
    • 100 $0.11
    • 1000 $0.03591
    • 10000 $0.02795
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    Avnet Silica PDZ4.3B,135 8 Weeks 10,000
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    EBV Elektronik PDZ4.3B,135 8 Weeks 10,000
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    Z4 3B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    28f040

    Abstract: LH28F008SA LH28F040SUTD-Z4
    Text: LH28F040SUTD-Z4 FEATURES • 512K x 8 Bit Configuration • 5 V Write/Erase Operation 5 V VPP, 3.3 VCC – VCC for Write/Erase at as low as 2.9 V • Min. 2.7 V Read Capability – 190 ns Maximum Access Time (VCC = 2.7 V) • 2 Banks Enable the Simultaneous


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    PDF LH28F040SUTD-Z4 40-PIN J63428 SMT96117 28f040 LH28F008SA LH28F040SUTD-Z4

    WS45

    Abstract: M6656A M6654A 290A M6658 MSM6596A MSM6650 MSM9800 M6654 Y0303
    Text: J2D0091-38-Z4 ROMコード開発についてl 1. 開発の手順 MSM6650ファミリMSM9800ファミリ、及びMSM6596Aシリーズの開発フローと、各工程におい て必要な書類を番号で示します。開発フローに従って必要な書類を弊社に提出して下さい。


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    PDF J2D0091-38-Z4 MSM6650MSM9800MSM6596A M6652A M9802 M6653A M9803 M6654A M6595AM9805 M6655A M6656A WS45 290A M6658 MSM6596A MSM6650 MSM9800 M6654 Y0303

    mdd 42

    Abstract: Am22A 2SA179 78L05 TT 2206 54F01 CQ242 71-51C00-D02 LZ-173 KZ206
    Text: AK 8 A H1 2 AH 8 AN 9 AL1 5 A H1 0 AL 9 AH 6 A K1 0 AN 5 AL 7 A K1 4 AL 5 AN 7 AE 1 Z6 AG3 AC 3 AJ 1 AE 3 AB 6 AB 4 AF 6 Y3 AA 1 AK 6 Z4 AA 3 AD 4 H RE Q# 0 H RE Q# 1 H RE Q# 2 H RE Q# 3 H RE Q# 4 A K1 8 A H1 6 A H1 8 AL1 9 AL1 7 A DS # A N3 1 H R EQ#[0.4]


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    PDF 71-51C00-D02 mdd 42 Am22A 2SA179 78L05 TT 2206 54F01 CQ242 71-51C00-D02 LZ-173 KZ206

    7390

    Abstract: No abstract text available
    Text: PRELIMINARY CLD-DS89 Rev 0 Product family data sheet ® Cree XLamp CXA2590 LED Table of Contents Product Description features The • Available in 4-step and 2-step Characteristics. 2 Cree’s family of High Density HD EasyWhite bins at 2700 K,


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    PDF CLD-DS89 CXA2590 CXA2590 LE2401 LE2401 7390

    7390

    Abstract: No abstract text available
    Text: ® CLD-DS80 Rev 1A Product family data sheet Cree XLamp CXA3070 LED Product Description features Table of Contents The XLamp® CXA3070 LED array • Available in 4-step and 2-step Characteristics. 2 expands Cree’s family of high‑flux,


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    PDF CLD-DS80 CXA3070 CXA30XX 7390

    7390

    Abstract: No abstract text available
    Text: CLD-DS80 Rev 1 Product family data sheet ® Cree XLamp CXA3070 LED Product Description features Table of Contents The XLamp® CXA3070 LED array • Available in 4-step and 2-step Characteristics. 2 expands Cree’s family of high‑flux,


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    PDF CLD-DS80 CXA3070 CXA30XX 7390

    7390

    Abstract: No abstract text available
    Text: CLD-DS80 Rev 0A Product family data sheet ® Cree XLamp CXA3070 LED Table of Contents Product Description features The XLamp CXA3070 LED array • Available in 4-step and 2-step Characteristics. 2 expands Cree’s family of high‑flux,


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    PDF CLD-DS80 CXA3070 CXA3070â CXA30XX 7390

    990 LM

    Abstract: No abstract text available
    Text: ® Cree XLamp CXA3590 LED Table of Contents Product Description features The XLamp® CXA3590 LED array • Available in 4-step and 2-step Characteristics. 2 expands Cree’s family of high‑flux, EasyWhite bins at 2700 K,


    Original
    PDF CXA3590 CLD-DS81 LE3501 CXA30XX 990 LM

    7390

    Abstract: No abstract text available
    Text: CLD-DS80 Rev 0B Product family data sheet ® Cree XLamp CXA3070 LED features The XLamp CXA3070 LED array • Available in 4-step and 2-step Characteristics. 2 expands Cree’s family of high‑flux, EasyWhite bins at 2700 K,


    Original
    PDF CLD-DS80 CXA3070 CXA3070â CXA30XX 7390

    7390

    Abstract: No abstract text available
    Text: CLD-DS80 Rev 0 Product family data sheet ® Cree XLamp CXA3070 LED Table of Contents Product Description features The XLamp CXA3070 LED array • Available in 4-step and 2-step Characteristics. 2 expands Cree’s family of high‑flux,


    Original
    PDF CLD-DS80 CXA3070 CXA3070â CXA30XX 7390

    RCA 7945

    Abstract: 7390
    Text: ® CLD-DS80 Rev 0C Product family data sheet Cree XLamp CXA3070 LED features The XLamp CXA3070 LED array • Available in 4-step and 2-step Characteristics. 2 expands Cree’s family of high‑flux, EasyWhite bins at 2700 K,


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    PDF CLD-DS80 CXA3070 CXA3070â CXA30XX RCA 7945 7390

    imd 5210

    Abstract: MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    PDF MRF282SR1 MRF282ZR1 imd 5210 MJD310 RE65G1R00 MJD320 MALLORY VARIABLE CAPACITORS GX-0300-55-22 Arlon transistor z9 GX0300 27291SL

    100B270JCA500X

    Abstract: 100B390JCA500X 100B201JCA500X GX03005522 MRF282
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    PDF MRF282SR1 MRF282ZR1 100B270JCA500X 100B390JCA500X 100B201JCA500X GX03005522 MRF282

    microstrip

    Abstract: microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier


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    PDF MRF282SR1 MRF282ZR1 microstrip microstrip resistor GX-0300-55-22 MJD320 Z7 transistor 10 watts FM transmitter MJD310 100B201JCA500X RE65G1R00 CDR33BX104AKWS

    Untitled

    Abstract: No abstract text available
    Text: ® Cree XLamp CXA3590 LED Product Description features Table of Contents The XLamp® CXA3590 LED array • Available in 4-step and 2-step Characteristics. 2 expands Cree’s family of high‑flux, EasyWhite® bins at 2700 K,


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    PDF CXA3590 CLD-DS81 LE3501 CXA30XX

    K2564

    Abstract: K2563 ISEC2000-7 335 m5e K1647 c128t k2569
    Text: Specification on a Block Cipher : Hierocrypt–3 Toshiba Corporation September 15, 2000 Contents 1 Design principle 1.1 Data randomizing part . . . . . . . . . . . . . . . . . . . . . . 1.1.1 Nested SPN structure . . . . . . . . . . . . . . . . . . 1.1.2 Simplicity and flexibility of the nested SPN structure


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    PDF 64-bit CSEC11-8, CSEC11-7, ISEC2000-7, K2564 K2563 ISEC2000-7 335 m5e K1647 c128t k2569

    27271SL

    Abstract: MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications


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    PDF MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 27271SL MALLORY CAPACITORS MALLORY VARIABLE CAPACITORS RE65G1R00 MALLORY 150 CAPACITORS C18 ph GX-0300-55-22 GX-0300 ph c15 mjd310

    transistor z4 n

    Abstract: NPN transistor mhz s-parameter mjd310 MRF282
    Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at


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    PDF MRF282/D MRF282SR1 MRF282ZR1 MRF282/D transistor z4 n NPN transistor mhz s-parameter mjd310 MRF282

    Untitled

    Abstract: No abstract text available
    Text: LH28F040SUTD-Z4 FEATURES • 512K x 4M 512K x 8 Flash Memory 40-PIN TSOP TOP VIEW 8 Bit Configuration N • 5 V Write/Erase Operation (5VVpp, 3.3 Vcc) - Vcc for Write/Erase at as low as 2.9 V • Min. 2.7 V Read Capability - 190 ns Maximum Access Time (VCC = 2.7V)


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    PDF LH28F040SUTD-Z4 40-PIN J63428 T96117

    Z6 DIODE

    Abstract: z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP
    Text: PHILIPS E C 6 INC 54E ]> • bbS3ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time trr


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    PDF ECG109 ECG110A ECG110MP ECG113A ECG114 DO-27 ECG515 ECG551 ECG117A ECG556 Z6 DIODE z12 diode Z4 diode z11 diode diode ECG125 ECG555 ECG584 schottky ECG117A ecg125 diode ECG178MP

    diode ECG125

    Abstract: CI 3060 elsys ECG113A ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky
    Text: PHILIPS E C 6 INC 54E ]> • b b S 3 ti2a Q00720S 535 m i Q G Diodes and Rectifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description Average Rectified Forward Current lO Max Forward Current Repetitive Peak IFRM Max Reverse Recovery Time


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    PDF bb53R2fi ECG109 ECG110A ECG110MP ECG113A ECG114 1N415C 1N415E 1N416C 1N416E diode ECG125 CI 3060 elsys ci 3060 ECG577 Z6 DIODE DIODE GENERAL PURPOSE DET 200 PRV SCR ECG117A ECG576 ECG584 schottky

    17AX4

    Abstract: 51N3 1N4722 1N2637 1N54O4
    Text: 57 E » INTEX/ SEMITRONICS CORP • semitron hot line H8 b 154 fa ODOPBOS í - r - o i- o i TOLL FREE NUMBER 800-777-3960 I discrete devices T*- 3. 3 - 2 , 3 special package silicon rectifiers cont'd stud mounted fast recovery silicorfrèctifiers M axim um I


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    PDF 1N3893 17AX4 51N3 1N4722 1N2637 1N54O4

    Untitled

    Abstract: No abstract text available
    Text: ^ UNIVERSAL DEMULTIPLEXER/DECODER SYNERGY SY100S370 SEMICONDUCTOR DESCRIPTION FEATURES • Max. propagation delay of 1200ps ■ Iee min. of -92m A ■ ESO protection of 2000V ■ Industry standard 100K ECL levels ■ Extended supply voltage option: V ee = -4.2V to -5.5V


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    PDF SY100S370 1200ps F100K 0013fil SY100S370DC D24-1 SY100S370FC F24-1 SY100S370JC

    Untitled

    Abstract: No abstract text available
    Text: DEPT i \ 2 3 4 'S. 5 6 7 8 9 10 11 2 ME. » DRAWING CUSTOMER W ATERTOW N,MASS. _I_ T E R M I N A I - FADE FLANGED PART NO. PART NAME * PART NO. 3Bt~4 3B Z-4 3 5 5 -4 3B 4-4 3*BI'~3 • *spL‘7>_*3 Z. «/DC. 3 B 3 -3 ' 3 B 4 -3 3&l~Cs


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    PDF Cf75-M OS17-B