Z3A13 Search Results

Z3A13 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Z3A13		Unknown	Shortform Semicon, Diode, and SCR Datasheets		Short Form	PDF
Z3A13		Semitron	Data Book 1991		Scan	PDF
Z3A130		Semitron	Data Book 1991		Scan	PDF
Z3A130		Semitron	130V, 10Wt General purpose voltage reference/regulator diode		Scan	PDF
Z3A130R		Semitron	130V, 10Wt General purpose voltage reference/regulator diode		Scan	PDF

Z3A13 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MO-1428A Abstract: No abstract text available Text: HN58C1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-028F Z Rev. 6.0 Apr. 8, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word x 8-bit. It has realized high speed, low power consumption and high	OCR Scan	HN58C1001 131072-word ADE-203-028F 128-byte HN58C1001R TFP-32DAR) HN58C10O1 MO-1428A	PDF
ic 7493 truth table Abstract: 1601 resistor pack IMS1600 IMS1601LM Text: IM S 1 6 0 0 M IM S 1 6 0 1 L M CMOS High Performance 64K x 1 Static RAM MIL-STD-883C mos DESCRIPTION FEATURES • INMOS' Veiy High Speed CMOS • Advanced Process -1 .6 Micron Design Rules • Full Military Temperature Operating Range -55°C to +125°C	OCR Scan	IMS1600M IMS1601LM MIL-STD-883C MIL-STD-883C 22-Pin, 300-mil 22-Pin 64Kx1 MIL0N-70M ic 7493 truth table 1601 resistor pack IMS1600 IMS1601LM	PDF
tower pro sg 90 Abstract: No abstract text available Text: SGS-THOMSON Æ M28F410 M28F420 ÍL [ fï C M O S 4 Megabit x8 or x16, 7 Blocks FLASH M E M O R Y ADVANCE DATA DUAL x8 andx16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and	OCR Scan	M28F410 M28F420 andx16 TSOP56 20/25mA M28F410, 7W1S37 tower pro sg 90	PDF
IA15 Abstract: No abstract text available Text: G 7. SGS-1H 0 MS 0 N M28V841 HQÊISOIlLiÊratôIRiOlgS LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH M EM O RY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSCJP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE	OCR Scan	M28V841 TSCJP40 100ns TSOP40 x20mm IA15	PDF
Untitled Abstract: No abstract text available Text: HN58C1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58C1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58C1001 is capable of in-system electrical Byte and Page reprogrammability.	OCR Scan	HN58C1001 128-Byte	PDF
Untitled Abstract: No abstract text available Text: 5 7 . S G S -T H O M S O N [fflM iH iM M B g S M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE	OCR Scan	M28V841 TSOP40 100ns 7T2T237	PDF
Untitled Abstract: No abstract text available Text: HN62W428 Series 524,288-word x 16-bit / 1,048,576-word x 8-bit CMOS Programmable Mask ROM HITACHI The HN62W 428 is a 8-M bit CMOS Programmable Mask ROM organized either as 524,288 words by 16 bits or as 1,048,576 words by 8 bits. Realizing low power consum ption, this memory is allowed	OCR Scan	HN62W428 288-word 16-bit 576-word HN62W HN62W428P HN62W428FB 42-pin DP-42) 44-pin	PDF
A13D Abstract: No abstract text available Text: M29F400T M29F400B Æ T S G S -T H O M S O N * l i . IM M i[ L Ë (g W i[] S 4 Mb (x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME	OCR Scan	M29F400T M29F400B x8/x16, TSOP48 AI01977 M29F400T, 29F400T 120ns A13D	PDF