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    Z14 37 Search Results

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    Z14 37 Price and Stock

    Rochester Electronics LLC SMBZ1437LT3

    DIODE ZENER .225W SOT23 SPCL
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    DigiKey SMBZ1437LT3 Bulk 40,000 11,539
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    FTS 8Z14370003

    2.5x2.0 XTAL 10ppm 30ppm 20pF
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    DigiKey 8Z14370003 Reel 10 1
    • 1 $0.57
    • 10 $0.5
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    onsemi NL37WZ14USG

    Inverters 1.65-5.5V CMOS Dual Triple Schmitt
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    Mouser Electronics NL37WZ14USG
    • 1 $0.52
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    Caplugs Z1400Q1

    Conduit Fittings & Accessories CAP TUBE RED LDPE
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    Mouser Electronics Z1400Q1
    • 1 $6.45
    • 10 $5.47
    • 100 $4.84
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    Altech Corporation GZ14 0737

    Circuit Breaker Accessories Clip
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    Mouser Electronics GZ14 0737
    • 1 $1.44
    • 10 $0.634
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    Z14 37 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    XCS-Z11

    Abstract: XCS-Z12 XCS-Z14 XCK P XCS-Z15 DE9-RA1012 XCS-Z200 DE9-RA1016 XCS TE XCS-Z13
    Text: XCS TE www.schneider-electric.com Safety interlock switch Interrupteurs de sécurité Sicherheits-Positionsschalter Interruptores de seguridad Interruttori di sicurezza Interruptores de segurança XCS Z200 XCS TE XCS Z11 XCS Z12 XCS Z13 XCS Z14 XCS Z15 English


    Original     		PDF

    BZX84-3V3 z14

    Abstract: c5v6 BZX84 bzx84-3v3 BZX84C BZX84-C27 c4v7 bzx843v3 c6v2
    Text: Transys Electronics L I M I T E D BZX84C series SILICON PLANAR VOLTAGE REGULATOR DIODES PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 3 Marking BZX84–C3V3 = Z14 C3V6 = Z15 C3V9 = Z16 C4V3 = Z17 C4V7 = Zl


    Original     		PDF BZX84C BZX84 BZX84-C27 BZX84-3V3 z14 c5v6 bzx84-3v3 BZX84-C27 c4v7 bzx843v3 c6v2

    D-97816 lohr

    Abstract: rexroth HED 4 GDME 311 mannesmann rexroth Z15L24 RN181 rn181.04 D-97813 GDME rexroth
    Text: RDE 50 060-E/08.95 Hydro-elektrischer Druckschalter Typ HED 8, Serie 1X Hydro-electric Pressure switch Type HED 8, Series 1X RDE 50 060-E/08.95 Ersetzt / Replaces: 12.94 Bei Ersatzteilbestellung bitte die komplette Typenbezeichnung siehe Typenschild angeben.


    Original     		PDF 060-E/08 D-97813 D-97816 D-97816 lohr rexroth HED 4 GDME 311 mannesmann rexroth Z15L24 RN181 rn181.04 GDME rexroth

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF MMRF1021N MMRF1021NT1

    Z6 3pin

    Abstract: J262 AFT09MS007NT1
    Text: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT09MS007N AFT09MS007NT1 Z6 3pin J262 AFT09MS007NT1

    GRM55DR61H106KA88L

    Abstract: MW7IC2040N atc100b0r8bt500xt atc100b6r8ct500xt multicomp chip resistor CRCW12065601FKEA Pcb 065-44 ATC100B1R0BT500XT 02499 A115
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 0, 2/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


    Original     		PDF MW7IC2040N MW7IC2040N MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 GRM55DR61H106KA88L atc100b0r8bt500xt atc100b6r8ct500xt multicomp chip resistor CRCW12065601FKEA Pcb 065-44 ATC100B1R0BT500XT 02499 A115

    LM340T5

    Abstract: capacitor 476 SMD 6078B smd transistor A6a dale resistor data sheet DIODE 1N4001 SMD resistor smd A6A smd transistor 2f VALOR lan transformer
    Text: DUMBHUB REV C Partslist Monday, March 04, 1996 ite m Referance Qty Devaice Device Description Package Vendor Vendor PN 1 C1 1 Capacitor ELEC_107 515D Sprague 2 10 Capacitor .01MF COG Ceramic Capacitor CC1812 KEMET 3 C15,C1921,C2326,C29-30 C2 515D107M016A A6A


    Original     		PDF CC1812 515D107M016A C1812C103J5G C1921 C2326 C29-30 RC1206 220PF C41-42 -G-884A-PG4 LM340T5 capacitor 476 SMD 6078B smd transistor A6a dale resistor data sheet DIODE 1N4001 SMD resistor smd A6A smd transistor 2f VALOR lan transformer

    AFT504

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS004N AFT05MS004NT1 AFT504

    GRM55DR61H106KA88L

    Abstract: MW7IC2040NBR1 atc100b6r8ct500xt MW7IC2040N A114 A115 AN1977 AN1987 JESD22 TO272WB-16
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


    Original     		PDF MW7IC2040N MW7IC2040N MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1 GRM55DR61H106KA88L MW7IC2040NBR1 atc100b6r8ct500xt A114 A115 AN1977 AN1987 JESD22 TO272WB-16

    ATC600F470BT250XT

    Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


    Original     		PDF MW7IC2040N MW7IC2040N MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1

    johanson

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284LSR1 MRF284LR1 johanson

    ATC600F241JT

    Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, ATC600F241JT GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12

    MRF5S4140H

    Abstract: No abstract text available
    Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H

    j0810

    Abstract: J0743 j0249 100b1r5jp500x J0313
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S4140H 28--volt IS--95 MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H j0810 J0743 j0249 100b1r5jp500x J0313

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1

    atc 17-25

    Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, atc 17-25 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation


    Original     		PDF MMRF1004NR1 MMRF1004GNR1 MMRF1004N

    C8450

    Abstract: MRF5S4140H
    Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450

    J0743

    Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 J0743 MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22

    RE60G1R00

    Abstract: RM73B2B682JT RM73B2B152JT SME50VB 56590653B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier


    Original     		PDF MRF284R1 MRF284LSR1 RE60G1R00 RM73B2B682JT RM73B2B152JT SME50VB 56590653B

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation


    Original     		PDF MMRF1004NR1 MMRF1004GNR1 MMRF1004N

    MRF5S4140H

    Abstract: No abstract text available
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H

    CEE2X56S-V3Z14

    Abstract: EE2X92SC-VI2Z14 Framatome 211 pc burndy card edge 2,54 CEE2X91S-V11Z14 27Z14 54461 T8901 burndy CARD EDGE 14PTS
    Text: CEE2X91S-V7Z14 CEE2X91S-VI1Z14 36 75 91 91 112 150 182 182 TABLE OF DIMENSIONS N& OF CONTACT PARS D E BAY A BAY B 11 45 .5 9 0 N4.991 Z39Q rSB.171 37 38 1.890 [4&011 1.940 [49.281 42 49 2.140 r5 4 J6 l 2.490 I83 45 1 42 49 2.140 rS 4 .3 6 l 2.490 f8 3 ¿ 5 l


    OCR Scan     		PDF CEE2X56S-V3Z14 CEE2X75S-V3Z14 CEE2X91S-V7Z14 CEE2X91S-VI1Z14 Y14JM 30t48] SE95508 EE2X92SC-VI2Z14 Framatome 211 pc burndy card edge 2,54 CEE2X91S-V11Z14 27Z14 54461 T8901 burndy CARD EDGE 14PTS