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    Z13 SOT Search Results

    Z13 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    Z13 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Sallen-Key

    Abstract: Z4 SOT23 opamp applications schematics Z14 SC70-6 Z14 SOT23-6 Z8 SOT23 sot23t cmos opamp Z6 SOT23 z1 sot23
    Text: AN2995 Demonstration board user guidelines for single operational amplifiers Introduction This demonstration board is designed to help in the characterization of single operational amplifiers in SOT23-5 two different pinouts and SC70-5 packages. Operational amplifiers


    Original     		PDF AN2995 OT23-5 SC70-5 OT23-6 SC70-6 Sallen-Key Z4 SOT23 opamp applications schematics Z14 SC70-6 Z14 SOT23-6 Z8 SOT23 sot23t cmos opamp Z6 SOT23 z1 sot23

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type 350mW Surface Mount Zener Diodes BZX84C3V0 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1


    Original     		PDF 350mW BZX84C3V0 OT-23 /W200

    Untitled

    Abstract: No abstract text available
    Text: Product specification BZX84C3V0 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Ideally Suited for Automated Assembly Processes 1 0.55 350mW Power Dissipation +0.1 1.3-0.1 +0.1 2.4-0.1 Planar Die Construction 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1


    Original     		PDF BZX84C3V0 OT-23 350mW

    100B330JW

    Abstract: chip resistors 0805 philips MRF9100 esd z10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100R3 MRF9100SR3 100B330JW chip resistors 0805 philips esd z10

    100B220GW

    Abstract: 100B100GW
    Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100R3 MRF9100SR3 100B220GW 100B100GW

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation


    Original     		PDF OT-23 BZX84C2V4-BZX84C39 OT-23 350mW BZX84C27 BZX84C30 BZX84C33 BZX84C36 BZX84C39 300us.

    AFT504

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this


    Original     		PDF AFT05MS004N AFT05MS004NT1 AFT504

    BZX84C3V3 z14

    Abstract: diode zener z9 Z16 SOT23
    Text: 350mW ZENER DIODES BZX84 SERIES 350mW ZENER DIODE • The latest comprehensive data to fully support these parts is readily available. • • • • • New Product SOT23 Package Voltage Max. Zener Typ. Temp Max. Reverse TA=25°C Range Impedance Coefficient


    Original     		PDF 350mW BZX84 BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V6 BZX84C3V9 BZX84C4V3 BZX84C3V3 z14 diode zener z9 Z16 SOT23

    BZX84-C5V1

    Abstract: No abstract text available
    Text: BZX84Cx Series SURFACE MOUNT ZENER DIODE REVERSE VOLTAGE – 2.4 to 39 Volts POWER DISSIPATION – 0.3 Watts FEATURES SOT-23 • Planar die construction • 300mW power dissipation rating • Ultra-small surface mount package SOT-23 Dim. A A1 b c D E E1 e


    Original     		PDF BZX84Cx OT-23 OT-23 300mW J-STD-020D 2002/95/EC Volta14 Jul-2010, KSJR06 BZX84-C5V1

    kz4 y6

    Abstract: KY8 Y8 Y6 kz4 BZX84C2V7 ky4 diode kz4 diode ky2 y3 KZ9 Y6 BZX84C13 KY3 Y3 kz4
    Text: BZX84C2V7 - BZX84C51 350mW SURFACE MOUNT ZENER DIODE Features • • • • Planar Die Construction 350mW Power Dissipation Zener Voltages from 2.7V - 51V Ideally Suited for Automated Assembly Processes SOT-23 Mechanical Data • • • • • • Case: SOT-23, Molded Plastic


    Original     		PDF BZX84C2V7 BZX84C51 350mW OT-23 OT-23, MIL-STD-202, BZX84C4V3 BZX84C4V7 BZX84C5V1 kz4 y6 KY8 Y8 Y6 kz4 ky4 diode kz4 diode ky2 y3 KZ9 Y6 BZX84C13 KY3 Y3 kz4

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation


    Original     		PDF OT-23 OT-23 BZX84C2V4-BZX84C39 300mW

    Z6 DIODE

    Abstract: No abstract text available
    Text: Zener Diode ctparts.com CTZ84C Series Not shown at actual size. 2.4V ~ 39V RoHS Compliant CHARACTERISTICS Description: SOT-23 Plastic-Encapsulated Zener Diode Features: Planar Die Construction. 350mW Power Dissipation. Zener Voltages from 2.4V ~ 39V. Ideally Suited for Automated


    Original     		PDF CTZ84C OT-23 350mW Z6 DIODE

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF9100/D MRF9100R3 MRF9100SR3 MRF9100/D

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 ZENER DIODE FEATURES z Planar Die Construction z 300mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation


    Original     		PDF OT-23 OT-23 BZX84C2V4-BZX84C39 300mW

    Transistor J182

    Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA
    Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies


    Original     		PDF MRF9100/D MRF9100 MRF9100R3 MRF9100SR3 MRF9100 MRF9100R3 Transistor J182 MRF9100SR3 08053G105ZATEA

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100LR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100R3 MRF9100SR3

    diode zener Z11

    Abstract: Y415 Y6 ZENER DIODE C18 zener Zener diode z12 15 BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V9
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate DIODE BZX84C2V4-BZX84C39 SOT-23 ZENER DIODE FEATURES z Planar Die Construction z 350mW Power Dissipation z Zener Voltages from 2.4V - 39V z Ultra-Small Surface Mount Package Power dissipation


    Original     		PDF OT-23 BZX84C2V4-BZX84C39 OT-23 350mW diode zener Z11 Y415 Y6 ZENER DIODE C18 zener Zener diode z12 15 BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V9

    81g diode

    Abstract: 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v
    Text: Zener Diode BZX84C 350mW MMBZ5221B - 5256B miniReel Order f' Number Volt SOT23 2.4V 2.7V 3.0V 3.3V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 12V 15V 16V 18V 20V 22V 24V 27V 30V 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232


    OCR Scan     		PDF BZX84C 350mW MMBZ5221B 5256B BZX84 Z17/W9 81g diode 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v

    zener y11

    Abstract: zener 472
    Text: Surface Mount Zener Diodes 350m W Zener Diodes/SOT23 Type Number Marking Code Maximum Zener Impedance Zener Voltage Range* N Vz @ Izj Typical Temperature Coefficient Maximum Reverse Leakage Current €» VR Vz Volts O hm s mA O hm s mA To %/°C mA Volts N


    OCR Scan     		PDF Diodes/SOT23 zener y11 zener 472

    marking code ZENER

    Abstract: BZX84C5V1 bzx84c BZX84C3V3 z14 BZX84C2V7 BZX84C3 BZX84C3V3 BZX84C3V6 MMBZ5223B MMBZ5225B
    Text: JGD BZX84C - SERIES o SURFACE MOUNT ZENER DIODES/SOT - 23 Ta = 25^ CrossReference Mar­ king Code Part No. Zener Voltage @ Izt Vz V Max.Dyn. Test Max.Dyn. Test Imped. Current Imped. Current @lzk ¿Izt Rev. Current @Vr Temp Coeff. @Izt Zzt(Q ) Izt(mA) Zzk(Q ) Izk(mA) avz( %/k; 1K/ulA)


    OCR Scan     		PDF BZX84C BZX84C2V7 MMBZ5223B BZX84C3 MMBZ5225B BZX84C3V3 MMBZ5226B BZX84C3V6 MMBZ5227B SZX84C3V9 marking code ZENER BZX84C5V1 BZX84C3V3 z14

    Untitled

    Abstract: No abstract text available
    Text: FZ84C2V4S THRU FZ84C24VS SEMICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LUX Package: SOT-23 3 ZENER DIODES ZXX Pinout: 1-Anode, 2-NC, 3-Cathode (Vfr=0.9V Max @ Zener Voltage TYPE Vz1 (V) MARK @ lzT1=5fnA F=1 OmA For All Typos) (225mW) Max Zener


    OCR Scan     		PDF FZ84C2V4S FZ84C24VS OT-23 225mW) 4C15VS FZB4C16VS FZB4C18VS FZB4G20VS F284C22VS

    153 SOT23

    Abstract: No abstract text available
    Text: ZENER DIODES 350mW BZX84 SERIES CASE TYPE: T0-236AB (SOT-23) % Type Marking Ze n e r V o lta g e !1 1 at D yn a m ic resistance at T e m p , coeffi­ cient of Ze n e r Vo ltag e at In In In V rV rzj i i avz i H / K Test current D yn a m ic resistance at


    OCR Scan     		PDF 350mW) BZX84 T0-236AB OT-23) BZX84-C2V4 BZX84-C2V7 BZX84-C3 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 153 SOT23

    diode Z47

    Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
    Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352


    OCR Scan     		PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode Z27 S368 diode zener z6 1s diode