474k capacitor
Abstract: capacitor 474k IR switch dual mosfet marking EA DFN10 DFN-10 MSOP10 MSOP-10
Text: DUAL CHANNEL1.5 MHZ, 600MA SYNCHRONOUS STEP-DOWN CONVERTER FSP3112 FEATURES z z z z z z z z High Efficiency : Up to 96% 1.5MHz Constant Frequency Operation 600mA Output Current at VIN=3.0V Very Low Quiescent Current of 500µA No Schottky Diode Required
|
Original
|
600MA
FSP3112
MSOP10
DFN10
FSP3112
0197BSC.
474k capacitor
capacitor 474k
IR switch
dual mosfet marking EA
DFN10
DFN-10
MSOP-10
|
PDF
|
DIODE led SMD 5050
Abstract: 1210 3528 SMD LED smd led 5050 white FYLS-3528URC DIODE SMD 5050 3528URC 5050 SMD LED smd diode 8c led smd 5050 smd led 5050
Text: SMD FYLS – 3528URC Features: z z z Suitable for all SMT assembly and solder process. Available on tape and Reel Package : 2000pcs/ Reel Description. z z z The Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Red Light Emitting Diode.
|
Original
|
3528URC
2000pcs/
200mm
0603B/0603/0805:
4000pcs
10Reels
0805B/1206B/1206
3000pcs
DIODE led SMD 5050
1210 3528 SMD LED
smd led 5050 white
FYLS-3528URC
DIODE SMD 5050
3528URC
5050 SMD LED
smd diode 8c
led smd 5050
smd led 5050
|
PDF
|
smd led 5050
Abstract: DIODE led SMD 5050 led smd 5050 FYLS-3528UYC 1210 3528 SMD LED FYLS-3528 SMD diode mark smd 6 led 5050 DIODE SMD 5050
Text: SMD FYLS – 3528UYC Features: z z z Suitable for all SMT assembly and solder process. Available on tape and Reel. Package : 2000 pcs / Reel Description. z z z The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Original
|
3528UYC
200mm
0603B/0603/0805:
4000pcs
10Reels
0805B/1206B/1206
3000pcs
2000pcs
smd led 5050
DIODE led SMD 5050
led smd 5050
FYLS-3528UYC
1210 3528 SMD LED
FYLS-3528
SMD diode mark
smd 6 led 5050
DIODE SMD 5050
|
PDF
|
PT745F-81-1D
Abstract: STM-64 SFP Photodiode Array 2d IC XFP SR1 10 GBPS TRANSCEIVER I-64 STM-64 PT745F NeoPhotonics SFP 10g NeoPhotonics
Text: www.neophotonics.com VER A / 022208 PT745F-81-1D + 10Gb/s XFP Optical Transceiver Module 1 Features z Supports 9.95Gb/s～10.7Gb/s bit rates z Transceiver unit with independent Uncooled 1310nm DFB laser diode transmitter PIN photodiode receiver z Meet XFP MSA completely
|
Original
|
PT745F-81-1D(
10Gb/s
95Gb/s10
1310nm
2002/95/EC)
10GBASE-LR/LW
10dification
PT745F-81-1D
STM-64 SFP
Photodiode Array 2d
IC XFP SR1 10 GBPS TRANSCEIVER
I-64
STM-64
PT745F
NeoPhotonics
SFP 10g NeoPhotonics
|
PDF
|
Untitled
Abstract: No abstract text available
Text: C4D10120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 18 A* Z-Rec Rectifier Qc Features • • • • • 54 nC* 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching
|
Original
|
C4D10120D
O-247-3
O-24planted
C4D10120A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94946 SMPS MOSFET Applications l High Frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS 200V Benefits Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See AN 1001
|
Original
|
IRFB31N20DPbF
IRFS31N20DPbF
IRFSL31N20DPbF
O-262
O-220AB
IRFB31N20DPbF
IRFS31N20DPbF
O-220AB
AN-994.
|
PDF
|
AN-994
Abstract: IRL3103L 94946
Text: PD - 94946 SMPS MOSFET Applications l High Frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS 200V Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See AN 1001
|
Original
|
IRFB31N20DPbF
IRFS31N20DPbF
IRFSL31N20DPbF
O-262
O-220AB
IRFB31N20DPbF
IRFS31N20DPbF
O-220AB
AN-994.
AN-994
IRL3103L
94946
|
PDF
|
AN-994
Abstract: IRL3103L IRFB
Text: PD - 94946 SMPS MOSFET Applications l High Frequency DC-DC converters l Lead-Free HEXFET Power MOSFET VDSS 200V Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See AN 1001
|
Original
|
IRFB31N20DPbF
IRFS31N20DPbF
IRFSL31N20DPbF
O-262
O-220AB
IRFB31N20DPbF
IRFS31N20DPbF
O-220AB
AN-994.
AN-994
IRL3103L
IRFB
|
PDF
|
diode 6e
Abstract: No abstract text available
Text: SIEMENS STU51004/51OOSG/N/Z MEDIUM POWER STM51004/St0090Ì jfZ HIGH POWER STH51004/51005G/N/Z lo w po w er Fiberoptic« 1300 nm Laser in Coaxial Package with $NM*lgtaìl FEATURES • Designed for fiber optic networks • Laser diode with Multi-quantum well structure
|
OCR Scan
|
STU51004/51OOSG/N/Z
STM51004/St0090Ì
STH51004/51005G/N/Z
STL51004/5X
STM51004/5X
STH51004/5X
diode 6e
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SI EM ENS STL51004/51005G/N/Z m e d iu m p o w e r STM51004/51005G/N/Z HIGH POWER STH51004/51005G/N/Z LOW p o w e r Fiber Optics Com ponents La ser D iode s 1300 nm Laser in Coaxial Package with SM-Pigtail FEATURES • Designed for fiber optic networks • Laser diode with Multi-quantum well structure
|
OCR Scan
|
STL51004/51005G/N/Z
STM51004/51005G/N/Z
STH51004/51005G/N/Z
SB-17
0235b05
Mo022
18-pln
fl535t
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS low pow er m e d iu m p o w e r STL81004/ 81005G/N/Z STM81004/81005G/N/Z Fiber Optics Components User Diodes 1550 nm Laser in Coaxial Package with SM-Pigtail and Optional Connector FEATURES • Designed for fiber optic networks • Laser diode with multi-quantum well structure
|
OCR Scan
|
STL81004/
81005G/N/Z
STM81004/81005G/N/Z
Range62)
18-pln
fl535t
|
PDF
|
STL 1550
Abstract: No abstract text available
Text: SIEMENS low p o w e r S T L .8 1 medium p o w e r 0 0 4 /8 1 005G/N/Z STM81004/81005G/N/Z 1550 nm Laser in Coaxial Package with SM-Pigtail and Optional Connector FEATURES • Designed for fiber optic networks • Laser diode with multi-quantum welt structure
|
OCR Scan
|
005G/N/Z
STM81004/81005G/N/Z
STL81004/5X
STM81004/5X
STL81004/5X
STL81004/5G
STM81004/5G
STL 1550
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HSS81 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-175A Z Rev. 1 Jul. 1995 Features • High reverse voltage. (VR= 150V) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability.
|
OCR Scan
|
HSS81
ADE-208-175A
100mA
DO-34
|
PDF
|
maxim 1535
Abstract: yc 428 CM520813 diode gfm MAXIM 1535 CE
Text: 1SE D POWEREX INC • TSTHbai QQ03477 T ■ 'T - Z 5 - 2 . 5 m illER EX CM520413 CM520813 Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 SCR/Diode
|
OCR Scan
|
QQ03477
BP107,
CM520413
CM520813
Amperes/400-800
CM520413,
MAX/10
maxim 1535
yc 428
diode gfm
MAXIM 1535 CE
|
PDF
|
|
|
Zener Diode LT 432
Abstract: 8.2 B2 ZENER diode marking code 682 zener diode 82 b3 marking 222 zener diode 4.7 B1 zener diode 273-0333 zener diode B2 bt 784 zener 5.1 B2
Text: I ADE-208-130 B Z HZM-N Series Silicon Epitaxial Planar Zener Diode for Stabilizer HITACHI Features Rev. 2 May 1994 Outline • Wide spectrum from 1.9 V through 38 V of zener voltage provide flexible application. • MPAK Package is suitable for high density
|
OCR Scan
|
ADE-208-130
SC-59A
Zener Diode LT 432
8.2 B2 ZENER
diode marking code 682
zener diode 82 b3
marking 222 zener diode
4.7 B1 zener diode
273-0333
zener diode B2
bt 784
zener 5.1 B2
|
PDF
|
smd diode 1139
Abstract: NX DIODE SMD 1461 smd s5u0
Text: 4.silg9> AM \:z~ 10.4i.409 o|SQUARE - PAK] TO-263AB SMD) Packaged in 24mm Tape and Reel : C10T»*Q oTabless T0-220:C10T06Q-11A °Dual Diodes— Cathode Common 0 Low Forward Voltage Drop C10T05Q C10T06Q C10T06Q-11A 11A /50— 60V SCHOTTKY BARRIER DIODE 1.81.071 r*
|
OCR Scan
|
C10T05Q
C10T06Q
C10T06Q-11A
O-263AB
T0-220
smd diode 1139
NX DIODE SMD
1461 smd
s5u0
|
PDF
|
Avance
Abstract: No abstract text available
Text: [Z J ^ 7 /* S G S -T H O M S O N KÆD [E] [i[L[l©Tr^ 2 R!lD©i L9341 QUAD LOW SIDE DRIVER AVANCE DATA • DU/DT AND D I/DTCO NTRO L ■ PWM CONTROLLED OUTPUT CURRENT . SHORT CURRENT PROTECTION AND DI AGNOSTIC ■ INTEGRATED FLYBACK DIODE ■ UNDERVOLTAGE SHUTDOWN
|
OCR Scan
|
L9341
L9341
L9341H
Avance
|
PDF
|
Untitled
Abstract: No abstract text available
Text: r z 7 SGS-TfiOMSON ^ 7 # . [*^ Œ L9341 [L i© ^ 3 R l(§ S QUAD LOW SIDE D RIVER PRODUCT PREVIEW . DU/DT AND DI/DT CO NTROL • PWM CO NTRO LLED O U TPUT CURRENT ■ SHO RT CURREN T PROTECTION AND DI AG NOSTIC ■ INTEGRATED FLYBACK DIODE ■ UNDERVO LTAG E SHUTDOW N
|
OCR Scan
|
L9341
L9341
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A P T 1001R S V R A dvanced W 7Æ P o w e r Te c h n o lo g y 1000v 11 a i.oooq POWER MOS V Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
|
OCR Scan
|
1001R
1000v
APT1001
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A P T 1001 R 1B V F R • R A d van ced I r j po w er Te c h n o l o g y " 1000 v 11 a 1.1 ooq POWER MOS V FREDFET Pow er M OS V is a new generation o f high voltage N -C hannel enhancem ent m ode pow er M O S FE Ts. This new technolo gy m inim izes the JF E T effect,
|
OCR Scan
|
O-247
APT1001R1
|
PDF
|
C30011
Abstract: No abstract text available
Text: A P T 1001R B V R ADVANCED W 7Æ P o w e r Te c h n o l o g y 1000v 11 a i.oooq POWER MOS V Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
|
OCR Scan
|
1001R
1000v
O-247
APT1001RBVR
C30011
|
PDF
|
1001RBN
Abstract: No abstract text available
Text: ADVANCED P ow er Te c h n o l o g y APT1001RBN 1000V 11.0A 1.00Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001RBN
|
OCR Scan
|
APT1001RBN
1001RBN
APT1001RBN
O-247AD
1001RBN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCED P ow er Te c h n o lo g y APT1001R6BN 1000V 8.0A 1.60Í2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT 1001R6BN
|
OCR Scan
|
APT1001R6BN
1001R6BN
O-247AD
|
PDF
|
2SJ102
Abstract: K346 K3465 2SK345 2SJ101 2SK346 K346 fet
Text: H IT A C H I ! /-co PT O E L E C T R O N I C S } 7 3 D — -^ W 2 T T 5 ^ m rra U H I / OP'IO LLhCTRUNlUü; e 73C J ^ H L E D S m 10017 a D 2SK345,2SK346 S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ101, 2SJ102
|
OCR Scan
|
2SJ101,
2SJ102
2SK345
2SK346
44Tfc
DQ1D011
-2SK345,
2SK346
2SJ102
K346
K3465
2SJ101
K346 fet
|
PDF
|
