Untitled
Abstract: No abstract text available
Text: 45Amp,10.16 mm pitch, Board to Wire Connector for Internal Power Supply DF60 Series UL, C-UL, TÜV certified product Jc^fjZadX`^c\bZX]Vc^hb^h XdciV^cZY^ch^YZi]Z]ZVYZg HdX`ZiVcY]ZVYZg YZh^\cVkd^Yh h]dgi"X^gXj^iWZilZZc VY_VXZciXdciVXih# <j^YZ`ZnhegZkZci
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45Amp
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OWP switching
Abstract: No abstract text available
Text: SK150MLI066T ?- K WP X$N 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT J$YZ ?[ K WP X$ @$ ?[ K O]P X$ @$^H SEMITOP 4 IGBT Module *'-) UMM J OPO C ?- K ]M X$ OWM C LMM C _ WM J ?[ K OWP X$ U c- ?- K WP X$ OOP C ?- K ]M X$ dM C LMM
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SK150MLI066T
OWP switching
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Untitled
Abstract: No abstract text available
Text: SKD 160 SEMIPONT 4 ?$¥Q ?$$Q7 ?N$Q LN X <H> P UB'+ .%48'. -%4W ? ? UA. X <>> ]OW =>> <K>> <^>> <H>> =>> <K>> <^>> <H>> ¥YN <H>Z>= ¥YN <H>Z<K ¥YN <H>Z<^ ¥YN <H>Z<H <=>> <=>> ¥YN <H>Z<= <W Symbol Conditions Values Units LN A. X =J ]O A, X ^J ]OS .1, -( KW
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Untitled
Abstract: No abstract text available
Text: SKKT 330, SKKH 330 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 Thyristor / Diode Modules SKKH 330 SKKT 330 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9,8(2*'-( :2', &1602+82)/ /&'%
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32eZ3'
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Untitled
Abstract: No abstract text available
Text: CGGBP.35.6.A.02 Front CGGBP.35.6.A.02 Back CGGBP.35.6.A.02 Specification Part No. CGGBP.35.6.A.02 Product Name 35mm*35mm*6.5mm 3~4dBi GPS/GLONASS/BEIDOU Embedded Patch Antenna BEIDOU 1561MHz / GPS 1575MHz / GLONASS 1602MHz Feature Dielectric Ceramic Pin Mount
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1561MHz
1575MHz
1602MHz
SPE-14-8-018/A/PK
mor4-8-018/A/PK
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LTA-6025-2G4S3-A1
Abstract: LTA-6025-2G4S3-B1 lta6025 LTA-6025-2G4S3-B2 LTA-6025-2G4S3 LTA-6025 LTA602
Text: ANTENNA INSTALLATION GUIDE FOR LTA-6025 SERIES Mag. Layers TYPE A : LTA-6025-2G4S3-A1 thickness =2mm VSWR Y 5 4 X 3 2 43mm 1 GROUND 2 2.1 2.2 2.3 2.4 2.5 2.6 Frequency (GHz) 2.7 2.8 2.9 3 FEED LINE 19mm VSWR Peak Gain -0.59dB Efficiency 45.63% 2 2.5 3
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LTA-6025
LTA-6025-2G4S3-A1
LTA-6025-2G4S3-A1
LTA-6025-2G4S3-B1
lta6025
LTA-6025-2G4S3-B2
LTA-6025-2G4S3
LTA602
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LTA-5220-2G4S1-A1
Abstract: lta-5220
Text: ANTENNA INSTALLATION GUIDE FOR LTA-5220-2G4S1-A1 Mag. Layers TYPE A : 5 Y 4 14 mm 3 80mm Ground 6 mm X 2 1 2 2.2 2.4 2.6 Frequency GHz 2.8 3 38mm ● Feeding point VSWR Peak Gain 1.78 dB Efficiency 74.2 % Bandwidth (MHz) 2 140 2.5 190 3 230 Mag. Layers XZ CUT
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LTA-5220-2G4S1-A1
LTA-5220-2G4S1-A1
lta-5220
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CBA-1204-2G4S2-A1
Abstract: No abstract text available
Text: ANTENNA INSTALLATION GUIDE FOR CBA-1204-2G4S2-A1 Mag. Layers TYPE A : VSWR 5 Y 4 3 X 2 80mm Ground 1 2 2.1 2.2 2.3 2.4 2.5 2.6 Frequency GHz 2.7 2.8 2.9 3 38mm Grounding Point Peak Gain 3.42 dB Efficiency 91.11% VSWR 2 2.5 3 Bandwidth (MHz) 140 200 250 Mag. Layers
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CBA-1204-2G4S2-A1
CBA-1204-2G4S2-A1
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IEC 68-2-56
Abstract: IEC 68-2-29 R161237 IEC 68-2-32
Text: R380.500.218 Datasheet version 1.0. Planar Array Directional Antenna 2.4 – 2.5 GHz. 04/08 . Planar Array Directional Antenna 2.4 – 2.5 GHz Pulse Part Number: R380.500.218 Electrical Specifications Frequency Nominal Impedance [Ω] VSWR Gain (Radiating Element)
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IEC 68-2-56
Abstract: IEC 68-2-29 R161237
Text: R380.500.217 Datasheet version 1.0. Planar Array – Directional 2.4 – 2.5 GHz. 04/08 . Planar Array – Directional 2.4 – 2.5 GHz Pulse Part Number: R380.500.217 Electrical Specifications Frequency Nominal Impedance [Ω] VSWR Gain (Radiating Element)
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Untitled
Abstract: No abstract text available
Text: Underside View Top View this side faces the passenger (this side faces the sky) AA.107.301111 Speciication Part No. AA.107.301111 Product Name Stingray Low Proile Adhesive Mount GPS-GLONASS Antenna Feature 1575.42/1602MHz 55mm*51.7mm*10.8mm 3.3V 3M RG174 SMA(M)
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42/1602MHz
RG174
SPE-13-8-038/B/WY
10PCS
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Document Number: AN4399 Rev. 1, 01/2013 Application Note High Precision Calibration of a Three-Axis Accelerometer by Mark Pedley 1 Introduction Contents 1 Three-axis accelerometers supplied for the consumer market are typically calibrated by the sensor
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AN4399
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Untitled
Abstract: No abstract text available
Text: Underside View Top View this side faces the passenger (this side faces the sky) AA.107.301111 Specification Part No. AA.107.301111 Product Name Stingray Low Profile Adhesive Mount GPS-GLONASS Antenna Feature 1575.42/1602MHz 55mm*51.7mm*10.8mm 3.3V 3M RG174 SMA(M)
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42/1602MHz
RG174
SPE-13-8-038/B/WY
107Stingray
PSP-13-8-xxxx
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CSTCV50
Abstract: piezo mist Piezo ceramic element JGC42-1609 pine alpha cleaning ultrasonic piezo 28khz 852l Murata CSTCV
Text: Drawing No. JGC42-1609 P. 1/11 Specification for Piezoelectric Ceramic Resonator CSTCV50.00MXJ0H3 Approved by Issued by September 23, 1999 Date 1. Checked by Scope !"#$%&' *+"#,"-./01234567,"-89(5 6#," )1:;<=>?3@A+BCD1E2+FG1 HI1 JEKLMNO
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JGC42-1609
CSTCV50
00MXJ0H3
300mm/m
190mm
160mm
560mm
piezo mist
Piezo ceramic element
JGC42-1609
pine alpha cleaning
ultrasonic piezo 28khz
852l
Murata CSTCV
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7536
Abstract: 32P6B 36P2R-A a7532
Text: MITSUBISHI SEMICONDUCTORS * USB HID 7532 /7536 August 25.1999 Code:7532/7536 Date: Page: 1 of 18 MITSUBISHI SEMICONDUCTORS 7532/7536
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M37532M4-xxxFP
M37532M4-xxxGP
M37536M4-xxxSP
M37532E8FP
M37536E8SP
M37532RSS
M37536RSS
M37532T-PTC
SSOP36-450-40
M37530T-PTC
7536
32P6B
36P2R-A
a7532
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Untitled
Abstract: No abstract text available
Text: SKKT 72 H4, SKKH 72 H4 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Thyristor / Diode Modules SKKT 72 H4 NOMP NOOP= NDOP N CSUU CAUU N CUUU CCUU Symbol Conditions Values Units *2 > SVUW J5 R VB GSUUH XEW LAZSVUW J& R [B XEW ¥C Z ¥@ LAZSVU]W J& R AB XEW ¥C Z ¥@
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72pedance
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LBN16007
Abstract: No abstract text available
Text: SIPAT Co.,Ltd www.sipatsaw.com China Electronics Technology Group Corporation No.26 Research Institute LBN16007 SAW Filter Electrical Characteristic Specifications Parameter Unit Minimum Typical Maximum Center Frequency Insertion Loss MHz 159.9 160 160.1 dB
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LBN16007
DIP3512
100nH
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DIP2212
Abstract: LBN16003A
Text: SIPAT Co.,Ltd www.sipatsaw.com China Electronics Technology Group Corporation No.26 Research Institute LBN16003A SAW Filter Electrical Characteristic Specifications Parameter Unit Minimum Typical Maximum Center Frequency Insertion Loss MHz 159.85 160 160.15
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LBN16003A
DIP2212
DIP2212
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signetics high speed cmos 74hc
Abstract: No abstract text available
Text: File Number CD54/74HC367, CD54/74HCT367 CD54/74HC368, CD54/74HCT368 T-yz- o i 1538 Advance Information/ Preliminary Data High-Speed CMOS Logic FUNCTIONAL DIAGRAM Hex Buffer/Line Driver, 3-State Non-Inverting and Inverting 4302271 00177*12 b «HAS .Technical Data
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CD54/74HC367,
CD54/74HCT367
CD54/74HC368,
CD54/74HCT368
CDS4/74HC367,
HCT367
RCA-CD54/74HC367,
CD54/74HCT367,
0D177c
54/74HC
signetics high speed cmos 74hc
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Untitled
Abstract: No abstract text available
Text: YZÀ 128Kx32 SRAM MODULE PRELIMINARY* • Commercial and Industrial Temperature Ranges ■ TTL Compatible Inputs and C M O S Outputs ■ 5 Volt Pow er Supply FEATURES ■ Access Times of 17nS to 45nS ■ W PS128K32-XPJX 1/VHITE /MICROELECTRONICS Packaging
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PS128K32-XPJX
128Kx32
68-lead,
128Kx32
WPS128K32-XPJX
DQO-31
AO-16
WPS128K32-XPJX
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2SD2395
Abstract: 2sb1566
Text: 2SB1566 h ~7 y V Z- $ /Transistors 2 S B 1 5 6 X k ° $ * ' > 7 ^ 7 I s - P N P y ij 6 h7>yz$ Epitaxial Planar PNP Silicon Transistor • Jilj/£11;fritllfi£ ]/L o w Freq. Power Amp. • 1 rfjiEO/Dim ensions U n it: mm) VC E(sat) io n :;:; V c E ( s a t ) = - 0 . 3 V (T y p .)
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2SB1566
2SD2395
T0-220FP
TD-220FN
2sb1566
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FD11O
Abstract: No abstract text available
Text: YZÀ WSF512K16-XXX I/WHITE / M I C R O E L E C T R O N I C S 512Kx16 SRAM/FLASH MODULE P R E L IM IN A R Y • FEATURES FLASH MEMORY FEATURES • A ccess Tim es of 35nS S R A M and 90nS (FLASH) ■ 10,000 Erase/Program Cycles ■ A ccess Tim es of 70nS (SR A M ) and 120nS (FLASH)
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WSF512K16-XXX
512Kx16
120nS
66-pin,
120nS
FD11O
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2SD1665AM
Abstract: 2SB1130AM
Text: h "7 > y 7. $ / T ransistors 2SD1665AM x t N P N yU^> b?>yZ$ 4 lS ^ i H ltiffl/M edium Power Amp. Epitaxial Planar NPN Silicon Transistor 2SD 1665A M • W f^ S iE I/D im e n s io n s U n it: mm (B V C e o = 1 6 0 V ) o 2) f j i f *( , C o b ^ fS ^ 'o 3) 2 S B 1 1 3 0 A M ^ = 3 > 7 ° U T ' & 3 0
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2SD1665AM
2SB1130AM
2SB1130AM.
2SD1665AM
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Untitled
Abstract: No abstract text available
Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns Automatic Command and Read
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HYB39S64400/800/160AT
64MBit
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