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    Untitled

    Abstract: No abstract text available
    Text: http://www.fujisemi.com YG912S6RR FUJI Diode Low-Loss Fast Recovery Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Repetitive peak reverse voltage VRRM Isolating voltage Viso Terminals-to-case, AC.1min


    Original     		YG912S6RR PDF

    YG912S6RR

    Abstract: yg912s
    Text: DATE DRAWN FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,


    Original     		YG912S6RR MS5D3014 MS5D30 H04-004-03a YG912S6RR yg912s PDF

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF