Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YG912S6RR FUJI Diode Low-Loss Fast Recovery Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Repetitive peak reverse voltage VRRM Isolating voltage Viso Terminals-to-case, AC.1min
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YG912S6RR
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50Hz sine wave filter circuit
Abstract: YG912S6R FULL WAVE RECTIFIER active
Text: YG912S6R 10A (600V / 10A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 15±0.3 2.7±0.2 6.3 2.7±0.2 2 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding Low VF
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YG912S6R
13Min
50Hz sine wave filter circuit
YG912S6R
FULL WAVE RECTIFIER active
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50Hz sine wave filter circuit
Abstract: YG912S6
Text: YG912S6 10A (600V / 10A ) Outline drawings, mm LOW LOSS SUPER HIGH SPEED RECTIFIER 10.5MAX. 4.5MAX. Ø3.2+0.2 -0.1 2.0 17.0±0.3 4.7 6.0 3 1.2 Features 13.0MAX. 3.7 1 0.8 5.08 Insulated package by fully molding Low VF 2.7 0.4 Super high speed switching High reliability by planer design
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YG912S6
50Hz sine wave filter circuit
YG912S6
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YG912S2R
Abstract: No abstract text available
Text: YG912S2R 200V / 10A TO-22OF15 Outline Drawings LOW LOSS SUPER HIGH SPEED DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Low VF Super high speed switching. High reliability by planer design.
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YG912S2R
O-22OF15)
13Min
SC-67
YG912S2R
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YG912S2R
Abstract: No abstract text available
Text: YG912S2R 200V / 10A TO-22OF15 Outline Drawings LOW LOSS SUPER HIGH SPEED DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Low VF Super high speed switching. High reliability by planer design.
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YG912S2R
O-22OF15)
13Min
SC-67
YG912S2R
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YG912S6
Abstract: No abstract text available
Text: YG912S6 10A (600V / 10A ) LOW LOSS SUPER HIGH SPEED RECTIFIER Outline drawings, mm 10.5MAX. 4.5MAX. Ø3.2+0.2 -0.1 2.0 17.0±0.3 4.7 6.0 3 1.2 Features 13.0MAX. 3.7 1 0.8 5.08 Insulated package by fully molding Low VF 2.7 0.4 Super high speed switching High reliability by planer design
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YG912S6
YG912S6
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Untitled
Abstract: No abstract text available
Text: YG912S2R 200V / 10A TO-22OF15 Outline Drawings LOW LOSS SUPER HIGH SPEED DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Low VF Super high speed switching. High reliability by planer design.
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YG912S2R
O-22OF15)
13Min
SC-67
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power Diode 200V 10A
Abstract: Diode C91 02 c91 02 high power rectifier diode single 200v 30A schottky C91 diode "Power Diode" 200V 30A 30A, 600v RECTIFIER DIODE TO-220F15 diode 10a 400v
Text: Low-loss Fast Recovery Diodes LLD Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 Features LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER
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CB903-4
CB903-4S
ERA91-02
ERA92-02
ERB91-02
ERB93-02
ERC90-02
ERC91-02
KS926S2
SC902-2
power Diode 200V 10A
Diode C91 02
c91 02
high power rectifier diode single
200v 30A schottky
C91 diode
"Power Diode" 200V 30A
30A, 600v RECTIFIER DIODE
TO-220F15
diode 10a 400v
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diode 10a 400v
Abstract: TO-220F15 CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 erb93 diode ERC91-02
Text: Low-loss Fast Recovery Diodes LLD Single Device Type CB903-4 CB903-4S ERA91-02 ERA92-02 ERB91-02 ERB93-02 ERC90-02 ERC91-02 KS926S2 SC902-2 YG911S2R YG911S3R YG912S2R YG912S6 Features LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER
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CB903-4
CB903-4S
ERA91-02
ERA92-02
ERB91-02
ERB93-02
ERC90-02
ERC91-02
KS926S2
SC902-2
diode 10a 400v
TO-220F15
CB903-4
CB903-4S
ERA91-02
ERA92-02
ERB91-02
ERB93-02
erb93 diode
ERC91-02
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50Hz sine wave filter circuit
Abstract: No abstract text available
Text: YG912S6 10A (600V / 10A ) LOW LOSS SUPER HIGH SPEED RECTIFIER Outline drawings, mm 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 15±0.3 2.7±0.2 6.3 2.7±0.2 2 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding Low VF
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YG912S6
13Min
50Hz sine wave filter circuit
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YG912S6R
Abstract: No abstract text available
Text: YG912S6R 10A LOW LOSS SUPER HIGH SPEED RECTIFIER (600V / 10A ) Outline drawings, mm 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 15±0.3 2.7±0.2 6.3 2.7±0.2 2 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding Low VF
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YG912S6R
13Min
YG912S6R
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YG912S6RR
Abstract: yg912s
Text: DATE DRAWN FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 CHECKED FEB.-26-‘ 07 NAME APPROVED DWG.NO. T h i s m a t er i a l a n d t h e in f or m at i o n h e r ei n i s th e pr o pe r ty o f Fuji Electric D e v i c e Te c h n o lo g y C o . , L td . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
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YG912S6RR
MS5D3014
MS5D30
H04-004-03a
YG912S6RR
yg912s
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YG912S6
Abstract: No abstract text available
Text: FUJI '95 No.16 . MZ MS Ê i i 111ti I Ï» sI [iU M s ií lf e lJ E ï ¿u*<uM>I %’-4 i ^ ^ *«!!?•#íl'if i %|t i'i :± ^ M 0i f . . ! ; * . ¡ a Í,S ^ t I ;í ‘^1 ?;í,'r 1 " "" - r ' JU S S & ^ 'f t - K 6 0 0 V /1 0 A YG912S6 LOW LOSS SUPER HIGH SPEED RECTIFIER DIODE
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YG912S6
YG912S6
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yg311s6
Abstract: ilpi 031
Text: - 90- « B W06C W09A W09B W09C YG311S5 YG911S2 YG911S3 YG912S2 YG912S6 & B ÍL B aL B ÍL s ä ä ± *h Vr s m V rr m V (V) * Vr IFM (V) (A) s <°C) (A) 250 100 150 250 600 200 50 100 200 600 0. 0. 0. 0. 4 300 200 6QQ 200 300 200 600 5 5 10 10 75 6 6 6
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yg311s6
yg911s2
yg911s3
yg912s2
yg912ss
ilpi 031
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yg912s
Abstract: 223a 100C J-120 YG912S6
Text: YG912S6 10A • Outline Drawing l o w l o s s s u p e r HIGH s p e e d r e c t i f i e r ■ Features • Insulated package by fully overmolding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching
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YG912S6
O-22QF
yg912s
223a
100C
J-120
YG912S6
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YG912S2
Abstract: No abstract text available
Text: YG912S2 10A • Outline Drawing l o w lo s s s u p e r hig h speed r e c t i f i e r ■ Features • Insulated package by fully overmolding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching
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YG912S2
YG912S2
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pla 005a
Abstract: No abstract text available
Text: FUJI '9 5 N o . 1 6 ¡M?í ->; -. iu<Síí>* :± m R | | j § :M § i ; f Ä Ä -i % •N « : ? 600V / 1 0 A YG912S6 LO W LO SS S U P E R HIG H S P E E D R E C TIFIE R D IO D E I fr| Ji Features 4.5 ±0.2 fttc • 2.7±0.2 K i ? - f 7 ° Insulated package by fully m olding
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YG912S6
pla 005a
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yg912S2
Abstract: A209
Text: YG912S2 i OA LOW LOSS SUPER HIGH SPEED RECTIFIER • 4 # H : Features I n s u la t e d p a c k a g e b y f u ll y m o l d i n g . • ffiV F Low V t C o n n e c tio n D ia g ra m S u p e r hig h speed s w itc h in g . • afflux«*«*m - f is - i— H i g h re lia b ility b y p l a n e r d e s ig n .
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YG912S2
A209
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100C
Abstract: YG912S6
Text: FUJI '95 No. 16 _ _ î W ?! ü f i l »i f w ¥• i 1i i » • -. t>*ri» •*;* i H * •» •» * . » » » ‘ »«Lf * >t * ' ’ , ' ' .* H l * ., tf. , M . * , V <*,*. * - T » ,4i.-i*i>l<~i>. « •» »■*• v l * . V Î / » . ^ » ÏV *
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00V/1
YG912S6
100C
YG912S6
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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2SB1532
2SC3821
2SC3822
2SC3865
2SC3886
2SC4383
2SC4507
2SC4508
2SD1726
2SD1740
ET412
2SK1217
2SK2850
ESAB92M-02N
2SK2879
2SK2765
2SK2645
2SK1916
2sk2645 MOSFET
2sk1082
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esab34
Abstract: yg906
Text: FAST RECOVERY DIODES 200 -1000Volts 200 - 300VOLTS PACKAGE Part Number lo A 400-500 VOLTS ÜT nS Part Number 600-800 VOLTS lo (A) trr nS Part Number 1000 VOLTS lo (A) trr nS SG201-2 0.5 400 SC201-4 0.5 400 SC201-6 0.5 40Q SURFACE SC902-2 1 35 SC311-4 0.5
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-1000Volts
300VOLTS
SG201-2
SC902-2
SC211-2
SC321-2
ERA91-02
ERA92-02
ERB91-02
ERB93-02
esab34
yg906
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TC106A
Abstract: No abstract text available
Text: Fast Recovery Diodes Single package Ratings and characteristics Maximum rating Type Vrrm Volts Amps. °C Max. Volts VS -40 to +150 0.95 If=5A 0.1 0.035 *4 10.0 0.6 Fig. 1 -40 t o +150 0.95 (If=5A) 0.1 0.035 *4 3.0 2.0 Fig. 3 200 5 (Tc=134°C) 50 -40 to +150
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O-22QAB
O-220F17
O-22QF15
TC106A
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ERG81-004
Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Text: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *
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ERA82-004
ERA83-004
ERA81-004
ERA83-006
ERA84-009
ERA85-009
ERB83-004
ERB81-004
ERB83-006
ERB84-009
ERG81-004
ERB38-D
ESAC6
YG802C04
ESAD33-02
ERA18
era-84
YG811S0
YG802C06
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