YG811S04
Abstract: Schottky Diode 40V 5A YG811S04R
Text: YG811S04R 5A (40V / 5A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 1 2 1.2±0.2 Insulated package by fully molding Low VF 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2 2.7±0.2 Super high speed switching
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YG811S04R
13Min
SC-67
500ns,
O-22OF15)
YG811S04
Schottky Diode 40V 5A
YG811S04R
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YG811S04R
Abstract: YG811S04
Text: YG811S04R 40V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6±0.2
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YG811S04R
O-22OF15)
13Min
SC-67
YG811S04R
YG811S04
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Untitled
Abstract: No abstract text available
Text: YG811S06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6±0.2
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YG811S06R
O-22OF15)
13Min
SC-67
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Untitled
Abstract: No abstract text available
Text: YG811S09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 1.2±0.2 13Min 3.7±0.2 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2
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YG811S09R
O-22OF15)
13Min
SC-67
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Untitled
Abstract: No abstract text available
Text: YG811S09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 1.2±0.2 13Min 3.7±0.2 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2
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YG811S09R
O-22OF15)
13Min
SC-67
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YG811S06R
Abstract: No abstract text available
Text: YG811S06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6±0.2
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YG811S06R
O-22OF15)
13Min
SC-67
YG811S06R
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YG811S06R
Abstract: YG811S06 YG811
Text: YG811S06R 60V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 2.7±0.2 6.3 2.7±0.2 0.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6±0.2
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YG811S06R
O-22OF15)
13Min
SC-67
YG811S06R
YG811S06
YG811
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YG811S09R
Abstract: No abstract text available
Text: YG811S09R 90V / 5A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10.5±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 1.2±0.2 13Min 3.7±0.2 2.7±0.2 6.3 2.7±0.2 0.7±0.2 0.6±0.2
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YG811S09R
O-22OF15)
13Min
SC-67
YG811S09R
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SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
SD-46 Diode
Schottky 30A 40v
schottky diode 60V 5A
diode
Schottky Diode 20V 5A
Schottky Diode 40V 2A
5A schottky
60V 3A diode
ERA81-004
ERA83-006
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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Fuji Electric SM
Abstract: YG811S04
Text: 1. SCOPE This sp e c ific a tio n provides the ra tin g s and the te st requirement fo r FUJI SILICON DIODE YG811S04R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot N ol
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YG811S04R
MA-41
Fuji Electric SM
YG811S04
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Diode FAJ
Abstract: Diode FAJ package FAJ 40 YG811S09 5a schottky gb4 diode
Text: YG811S09 5A • Outline Drawing scHOTTKY b a r r i e r d io d e Connection Diagram ■ Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching
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YG811S09
500ns,
223fl71S
Diode FAJ
Diode FAJ package
FAJ 40
YG811S09
5a schottky
gb4 diode
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MA411
Abstract: YG811S09R
Text: 1. SCOPE This specification provides the ratings and the test requirement for FUJI SILICON DIODE YG811S09R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown (2) Marking is shown It is marked to type name or abbreviated type name, polarity and Lot Na
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YG811S09R
H04-004-07
MA411
YG811S09R
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YG811S09
Abstract: No abstract text available
Text: YG811S09 5A h + —/ •<ÿ * ± 'J K SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully m olding. #{& V f Low V f Connection Diagram Super high speed sw itching. • tv -* — High reliability by planer design. I Applications High speed pow er sw itchin g.
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500ns,
YG811S09
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lt760
Abstract: YG811S0
Text: YG811S09 5A h+ —/ • <ÿ * ± 'J K SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully molding. #{& V f Low Vf Connection Diagram Super high speed switching. •t v -*— High reliability by planer design. I Applications High speed power switching.
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YG811S09
500ns,
Temperatu7651
I95t/R89)
lt760
YG811S0
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Fuji Electric SM
Abstract: No abstract text available
Text: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.
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YG811S06R
Fuji Electric SM
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LIC HD 13
Abstract: YG811S09
Text: YG811S09 5A i> 3 SCHOTTKY BARRIER DIODE ’ Features Insulated package by fully m olding. • <&VF Low V f m m m & m Connection Diagram Super high speed sw itching. • t v — t - a m tC c ts s ifU tt H igh reliability by planer design. : A p p lic a tio n s
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OCR Scan
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SC-67
500ns,
LIC HD 13
YG811S09
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Fuji Electric SM
Abstract: No abstract text available
Text: This malerlal and ih# Information herein Is the property o. Fuji Elee Inc Co.Lid. They shaft be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any ihlrd party, nor used for the manufacturing purposes without ihe express written consent of Fuji Electric Co. Ltd.
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YG811S09R
H04-004-07
YG811S09R
Fuji Electric SM
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era-84
Abstract: 104C smd ERE81-004
Text: —K / Rectifier Diodes m -it i/yjil Schottky-Barrier Diodes SBD 1 in one-package 1 Ä Device type SMD i'tiSno Maximum rating Viww *1 If i a v ) ERA82-004 SC802-04 SC802-06 SC802-09 ERA83-004 ERA83-006 ERA81-004 ERA84-009 ERA85-009 ERB83-004 ERB83-006 ERB81-004
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ERA82-004
SC802-04
SC802-06
SC802-09
ERA83-004
ERA83-006
ERA81-004
ERA84-009
ERA85-009
ERB83-004
era-84
104C smd
ERE81-004
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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Untitled
Abstract: No abstract text available
Text: Schottky-Barrier Diodes Single package Ratings and characteristics V rrm lo Volts Amps. Dim ensions Max. m A G ram s Fig. No. Characteristics Ta=25°C T j and Tstg V fm Irrm # 3 Amps. °C M ax. Volts 0 .6 Ta=60°C) 25 -40 t o +125 0.55 (I f= 0.6A ) 1.0 0.18
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SC802-06
SC802-09
ERA83-004
ERA83-006
TQ-220F17
O-22QAB
TQ-220F15
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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2SB1532
2SC3821
2SC3822
2SC3865
2SC3886
2SC4383
2SC4507
2SC4508
2SD1726
2SD1740
ET412
2SK1217
2SK2850
ESAB92M-02N
2SK2879
2SK2765
2SK2645
2SK1916
2sk2645 MOSFET
2sk1082
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ERG81-004
Abstract: ERB38-D ESAC6 YG802C04 ESAD33-02 ERA18 ERB81-004 era-84 YG811S0 YG802C06
Text: Schottky-barrier diodes Connection Package V rrm Volts 40 45 60 90 Lead Single SC If s m (Amps.) 0.6 25 1.0 50 1.0 50 1.0 30 1.0 30 1.0 30 2.0 80 2.0 100 2.0 60 2.0 60 3.0 120 3.0 80 3.0 80 1.0 40 1.0 30 1.0 30 K-pack 5.0 80 TO-22QAB 5.0 120 5.0 10 TO-220F17 *
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ERA82-004
ERA83-004
ERA81-004
ERA83-006
ERA84-009
ERA85-009
ERB83-004
ERB81-004
ERB83-006
ERB84-009
ERG81-004
ERB38-D
ESAC6
YG802C04
ESAD33-02
ERA18
era-84
YG811S0
YG802C06
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YG811S06R
Abstract: No abstract text available
Text: Thit material and the Information herein ts the property o í Fuji Elee [oc Co .Ltd. They shall be neither reproduced, coptec tent, or disclosed in any way whatsoever Ior the use ol any third pany.nor used for the manufacturing purposes without the express written consent of Fup Electric Co. Ltd.
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YG811S06R
H04-004-07
YG811S06R
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