Untitled
Abstract: No abstract text available
Text: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C06R
O-22OF15)
13Min
SC-67
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Untitled
Abstract: No abstract text available
Text: DAT E CHECKED Jun.-18-‘03 Jun.-18-‘03 Device Name ： Type Name ： YG805C10R Spec. No. ： MS5D1816 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any
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YG805C10R
MS5D1816
H04-004-07
H04-004-03
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Untitled
Abstract: No abstract text available
Text: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C06R
O-22OF15)
13Min
SC-67
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YG805C04
Abstract: SCHOTTKY 20A 40V YG805C04R
Text: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C04R
O-22OF15)
13Min
SC-67
YG805C04
SCHOTTKY 20A 40V
YG805C04R
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YG805C06R
Abstract: No abstract text available
Text: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C06R
O-22OF15)
13Min
SC-67
YG805C06R
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SCHOTTKY 20A 40V
Abstract: a465
Text: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C04R
O-22OF15)
13Min
SC-67
SCHOTTKY 20A 40V
a465
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YG805C10
Abstract: "Dual Schottky Rectifier"
Text: BL GALAXY ELECTRICAL YG805C10 VOLTAGE RANGE: 100 V CURRENT: 20 A DUAL SCHOTTKY RECTIFIER FEATURES High surge capacity. TO-220AB For use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction.
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YG805C10
O-220AB
O-220AB
MIL-STD-750,
50mVp-p
YG805C10
"Dual Schottky Rectifier"
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Untitled
Abstract: No abstract text available
Text: YG805C04R 40V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C04R
O-22OF15)
13Min
SC-67
Stora00
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YG805C10
Abstract: No abstract text available
Text: YG805C010R 100V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 Low VF Super high speed switching. High reliability by planer design. 3 1.2±0.2 13Min 3.7±0.2 Features 2 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2
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YG805C010R
O-22OF15)
13Min
SC-67
YG805C10R
YG805C10
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yg805c06
Abstract: YG805C06R IO120
Text: YG805C06R 60V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1.2±0.2 13Min 3.7±0.2 Features 15±0.3 6.3 2.7±0.2 Low VF Super high speed switching. High reliability by planer design. 0.6 2.54±0.2 2.7±0.2
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YG805C06R
O-22OF15)
13Min
SC-67
yg805c06
YG805C06R
IO120
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YG805C10
Abstract: YG805C10R Schottky diode 50A 100v
Text: YG805C10R 100V / 20A TO-22OF15 Outline Drawings SCHOTTKY BARRIER DIODE 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 2.7±0.2 1 Low VF Super high speed switching. High reliability by planer design. 3 1.2±0.2 13Min 3.7±0.2 Features 2 15±0.3 6.3 2.7±0.2 0.6 2.54±0.2
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YG805C10R
O-22OF15)
13Min
SC-67
YG805C10
YG805C10R
Schottky diode 50A 100v
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A
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5CE120C
5KE120CA
5CE120CA
5CE12A
5KE12A
5CE12C
5KE12CA
5CE12CA
CAT7105CA
mp1410es
G547E2
G547H2
G547F2
P5504EDG equivalent
G547I1
SP8K10
SP8K10SFD5TB
LD1117Al
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IR2116
Abstract: TLP521 8 D3SBA60 equivalent 120K100
Text: FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-27223-1E For Power Supply Applications Multi-Resonance AC/DC Converter IC MB3873 • DESCRIPTION The MB3873 is a pulse frequency modulation PFM type multi-resonance AC/DC converter IC providing soft switching functions in a more compact, higher-efficiency, low-noise package.
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DS04-27223-1E
MB3873
MB3873
F9906
IR2116
TLP521 8
D3SBA60 equivalent
120K100
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D3SBA60 equivalent
Abstract: IR2116 D3SBA60 tlp521 equivalent 2SC3233 YG805C04 2SK2543 ECQU2A224MV FPT-16P-M06 HA17431P
Text: FUJITSU SEMICONDUCTOR DATA SHEET ASSP DS04-27223-2E For Power Supply Applications Multi-Resonance AC/DC Converter IC MB3873 • DESCRIPTION The MB3873 is a pulse frequency modulation PFM type multi-resonance AC/DC converter IC providing soft switching functions in a more compact, higher-efficiency, low-noise package.
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DS04-27223-2E
MB3873
MB3873
F0308
D3SBA60 equivalent
IR2116
D3SBA60
tlp521 equivalent
2SC3233
YG805C04
2SK2543
ECQU2A224MV
FPT-16P-M06
HA17431P
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UTI03
Abstract: P151 T460 YG805C04 IlI15
Text: YG805C04 2 oa * Outline Drawings S C H O T T K Y B A R R IER DIODE Features Insulated package by fully molding. • I& V f Low V f • Z4 t - Connection Diagram Super high speed switching. • -fu-i—ftmtusAnmit High reliability by planer design. I Applications
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YG805C04
SC-67
500ns,
l95t/R89
UTI03
P151
T460
IlI15
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diode F4 3J
Abstract: No abstract text available
Text: YG805C04 2 oa X 3 7 h + — ' < x) T ¥ * O u tlin e D ra w in g s K S C H O T T K Y B A R R IER DIODE I Features Insulated package by fully molding. • te V F Low V f WE • T A v + 's V T M - C o n n e ctio n D iagram Super high speed switching. • -f u - i —
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YG805C04
500ns,
diode F4 3J
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YG805C04
Abstract: 18Oi
Text: YG805C04 20A H Outline Drawing scHOTTKY b a r r i e r d io d e • Connection Diagram ■ Features • Insulated package by fully molding • Lo w V f • Super high speed switching r > h H « -| • High reliability by planer design !> i) ■ Applications
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YG805C04
500ns,
YG805C04
18Oi
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YG805C04
Abstract: k2030
Text: YG805C04 2oa X 3 7 h + — ' < x) T ¥ * Outline Drawings K S C H O T T K Y B A R R IER DIODE I Features Insulated package by fully molding. • te V F Low V f • WE TAv+'sVTM- Connection Diagram Super high speed switching. • -f u - i— High reliability by planer design.
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YG805C04
SC-67
500ns,
k2030
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A485
Abstract: No abstract text available
Text: YG8O5CO4 20 a *>3'y h + —/< X Ì 7 ¥ ^ —K • Outline Drawings SCHOTTKY BARRIER DIODE ■Ml Features Insulated package by fully m o ld in g . • te V F Low V f ¡TOE • X 'fy T 's if'Z t- Connection Diagram Super high speed sw itchin g. • T V -* -ftfffC J S A f ilit t
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YG805C04
YG805C04I20A)
A485
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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ESAB82-004
Abstract: ESAB82M-004 ESAB82M-006 ESAB85-009 KP823C04 KS823C04 TP801C04 TP801C06 YG801C04 YG801C06
Text: Schottky-Barrier Diodes Dual package Ratings and characteristics Type M axim um ratin§ V lo rrm Volts KS823C04 40 KP823C04 40 40 If s h # 2 *1 Am ps. Am ps. 5.0 Tc=87°C 5.0 Tc=87°C) 5.0 Tc=103°C) Therm al rating Tj and Tstg °c -40 t o +125 Characteristics Ta=25°C)
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KS823C04
KP823C04
TP801C04
TP801C06
ESAB82-004
ESAB82M-004
ESAB82M-006
O-220
O-22QAB
O-22QF17
ESAB85-009
YG801C04
YG801C06
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yg805c
Abstract: No abstract text available
Text: This ma «rial and the information herein ts the property of Fuji Elecinc Co.Ltd. They shall be neither reproduced, copiée leni, or disclosed in any way w hatsoever for the use of a ny third pany.nor used for the manufacturing purposes w ithout the express writ ion consent of Fuji Electric Co. Ltd.
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YG805C04R
H04-004-07
YG805C04R
yg805c
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ET412
Abstract: 2SK1217 2SK2850 ESAB92M-02N 2SK2879 2SK2765 2SK2645 2SK1916 2sk2645 MOSFET 2sk1082
Text: / Discontinued Types 9. S! Descciptien / ' f ' 7 - MOSFET Power MOFET O w c o n t& n je d ty p e ItW B S W P Â R e p la c a d typ e 2SK1009 2SK1010 2SK1011 2SK1012 2SK1015 2SK2871 2SK2875 2SK2639 2SK2641 2SK2755 2SK1016 2SK1023 2SK1024 2SK1082 2SK2643 2SK2646
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2SB1532
2SC3821
2SC3822
2SC3865
2SC3886
2SC4383
2SC4507
2SC4508
2SD1726
2SD1740
ET412
2SK1217
2SK2850
ESAB92M-02N
2SK2879
2SK2765
2SK2645
2SK1916
2sk2645 MOSFET
2sk1082
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