YA868C10R
Abstract: No abstract text available
Text: YA868C10R 100V / 30A [200509] Outline drawings, mm 10+0.5 4.5±0.2 2.7±0.1 Ø3.6±0.2 1.2 Applications 14 -0.5 Low IR Low VF Center tap connection 3.7±0.2 15±0.2 Features 6.4±0.2 Low IR Schottky barrier diode 0.4 0.8 2.7 2.54 High frequency operation
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YA868C10R
O-220AB
YA868C10R
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ya868c12
Abstract: ya868c12r ya868
Text: YA868C12R 30A (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 14 -0.5 120 0.88 15±0.2 Characteristics YA868C12R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM VF 4.5±0.2
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YA868C12R
YA868C12R
O-220
ya868c12
ya868
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YA868C15
Abstract: No abstract text available
Text: DATE CHECKED Device Name ： Type Name ： YA868C15R Spec. No. ： MS5D1808 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatever for the use of any
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YA868C15R
MS5D1808
H04-004-07
H04-004-03
YA868C15
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com YA868C08R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage Average output current Non-repetitive forward surge current*
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YA868C08R
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YA868C15
Abstract: YA868C15R
Text: YA868C15R 30A (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 14 -0.5 150 0.90 15±0.2 Characteristics YA868C15R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM VF 4.5±0.2
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YA868C15R
YA868C15R
O-220
YA868C15
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Untitled
Abstract: No abstract text available
Text: YA868C04R 45V / 30A [200509] Outline drawings, mm 10+0.5 4.5±0.2 2.7±0.1 Ø3.6±0.2 1.2 Applications 14 -0.5 Low IR Low VF Center tap connection 3.7±0.2 15±0.2 Features 6.4±0.2 Low IR Schottky barrier diode 0.4 0.8 2.7 2.54 High frequency operation
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YA868C04R
O-220AB
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YA868C06
Abstract: YA868C06R 4321
Text: YA868C06R 60V / 30A [200509] Outline drawings, mm 10+0.5 4.5±0.2 2.7±0.1 Ø3.6±0.2 1.2 Applications 14 -0.5 Low IR Low VF Center tap connection 3.7±0.2 15±0.2 Features 6.4±0.2 Low IR Schottky barrier diode 0.4 0.8 2.7 2.54 High frequency operation
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YA868C06R
O-220AB
YA868C06
YA868C06R
4321
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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YA868C15
Abstract: ya868c12 YG972S6 yg862c15 yg865c15 YG862C15R YG975C6R YA865C12R yg971s6 YG862C12R
Text: 整流ダイオード / Rectifier Diodes • 高耐圧ショットキーバリアダイオード High Voltage Schottky-Barrier Diodes（SBD） デュアル 2 in one-package 形 式 Device type YA862C12R YG862C12R TS862C12R YA865C12R YG865C12R TS865C12R
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O220AB
O220F
YA971S6R
YG971S6R
YA972S6R
YG972S6R
YA868C15
ya868c12
YG972S6
yg862c15
yg865c15
YG862C15R
YG975C6R
YA865C12R
yg971s6
YG862C12R
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Untitled
Abstract: No abstract text available
Text: DAT E DRAWN SEP.-14-‘07 CHECKED SEP.-14-‘07 CHECKED SEP.-14-‘07 NAME APPROVED DWG.NO. T h i s m a t e r i a l a n d t h e i n f o r m a t i o n h e r e i n i s t h e p r o p e r t y o f Fu ji E l e c t r i c D e v i c e Te c h n o l o g y C o . , L t d . T h e y s h a l l b e n e i t h e r r e p r o d u c e d , c o p i e d , l e n t ,
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YA868C08R
MS5D3286
MS5D3286
H04-004-03a
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