Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR H Y514170 S e r ie s 256K X 16-bit CMOS ORAM with 2 WE PRELIMINARY DESCRIPTION The Y514170 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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OCR Scan
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PDF
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Y514170
16-bit
HY514170
400mil
40pin
40/44pin
1AC09-00-APR93
4b75Dflfl
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CX-381
Abstract: No abstract text available
Text: -HYUNDAI Y514170B Series 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The Y514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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OCR Scan
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PDF
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HY514170B
256KX
16-bit
400mil
40pin
40/44pin
825mW
CX-381
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Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I H Y 5 1 4 1 7 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The Y514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access
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OCR Scan
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PDF
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256KX
16-bit
HY514170B
400mil
40pin
40/44pin
1AC21-00-MAY94
PQS702
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