01A SOT23
Abstract: LM4041CYM3-1.2
Text: LM4040/LM4041 Precision Micropower Shunt Voltage Reference General Description Ideal for space critical applications, the LM4040 and LM4041 precision voltage references are available in the subminiature 3mm x 1.3mm SOT-23 surface-mount package. The LM4040 is available in fixed reverse breakdown
|
Original
|
LM4040/LM4041
LM4040
LM4041
OT-23
LM4041-1
LM4040-5
LM4041
01A SOT23
LM4041CYM3-1.2
|
PDF
|
1811PA250-3C8
Abstract: 1811pl00-3c8 1811PL003C8 SMP25N06 1811PA2503C8 ferroxcube toroid 1811PL pot core inductor winding transistor a1m Si9110
Text: AN703 Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and battery-powered equipment, the advantages of MOS over bipolar technology for pulse-width modulation PWM controllers are significant. First, by using a BiC/DMOS
|
Original
|
AN703
Si9110
2pR9C10)
R11/R10)
1811PA250-3C8
1811pl00-3c8
1811PL003C8
SMP25N06
1811PA2503C8
ferroxcube toroid
1811PL
pot core inductor winding
transistor a1m
|
PDF
|
SMP25N06
Abstract: 1811PA250-3C8 1811PL00 1N4148 1N5822 AN703 Si9110 Si9111 TL431C toroidal transformer 120v
Text: AN703 Siliconix Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and batteryĆpowered equipment, the advantages of MOS over bipolar technology for pulseĆwidth modulation PWM controllers are significant.
|
Original
|
AN703
Si9110
2pR9C10)
R11/R10)
SMP25N06
1811PA250-3C8
1811PL00
1N4148
1N5822
AN703
Si9111
TL431C
toroidal transformer 120v
|
PDF
|
SMP25N06
Abstract: 1811pl00-3c8 ferroxcube 43 toroid core equivalent diode for R2C 1811P transistor a1m Si9110 1811PL Siliconix AN703 A1m anode
Text: AN703 Designing DC/DC Converters with the Si9110 Switchmode Controller James Blanc In distributed power systems and battery-powered equipment, the advantages of MOS over bipolar technology for pulse-width modulation PWM controllers are significant. First, by using a BiC/DMOS
|
Original
|
AN703
Si9110
2pR9C10)
R11/R10)
SMP25N06
1811pl00-3c8
ferroxcube 43 toroid core
equivalent diode for R2C
1811P
transistor a1m
1811PL
Siliconix AN703
A1m anode
|
PDF
|
6MBP75RS120
Abstract: CLK70AA160 PVC7516 6mbp50rs120 Thermistor 15SP 6mbp150rs060 d6650 CLK100AA160 ps12047 PD10016A
Text: GEI-100364C Supersedes GEI-100364B GE Fuji Drives USA AF-300 P11 User’s Guide 1999, 2000 by GE Fuji Drives USA, Inc. All rights reserved. These instructions do not purport to cover all details or variations in equipment, nor to provide every possible
|
Original
|
GEI-100364C
GEI-100364B
AF-300
0-F11
RF3180-F11
RF3100-F11,
RF3180-F11)
RF3280-F11,
RF3400-F11)
RF3880-F11)
6MBP75RS120
CLK70AA160
PVC7516
6mbp50rs120
Thermistor 15SP
6mbp150rs060
d6650
CLK100AA160
ps12047
PD10016A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PERFORMANCE SEMI CONDUCTOR EOE D • TObSST? 0001500 1 ■ P33PCT825A/B BUS INTERFACE REGISTER à - FEATURES ■ 3.3V +0.2V Power Supply I Buffered Common Clock Enable EN and
|
OCR Scan
|
P33PCT825A/B
28-Pin
P33PCT825
G1989
|
PDF
|
4503B
Abstract: 45038 4502B 45028
Text: AVG Sem iconductors DDi T echnical Data Hex Inverter/Buffer Hex Non Inverting Buffer DV4502B DV4503B This device is a strobed hex buffer/inverter with 3-State out puts, an inhibit control, and guaranteed TTL drive over the tem perature range. The DV14502B includes an input inhibit.
|
OCR Scan
|
DV14502B
DV14503B
4502b
DV4502B,
4503B
1-800-AVG-SEMI
4503B
45038
4502B
45028
|
PDF
|
Y2C diode
Abstract: y6c diode fl03 QS29FCT2520 AM29520
Text: QS29FCT520T, 521T, 2520T, 2521T Q QS29FCT520T QS29FCT521T High Speed CMOS Multilevel Pipeline Registers QS29FCT2520T QS29FCT2521T FEATURES/BENEFITS • • • • Pin and function compatible to the Am29520 Ground bounce controlled outputs Reduced output swing of 0-3.5V
|
OCR Scan
|
QS29FCT520T,
2520T,
2521T
QS29FCT520T
QS29FCT521T
QS29FCT2520T
QS29FCT2521T
Am29520
MIL-STD-883
FCT-T520T/1T
Y2C diode
y6c diode
fl03
QS29FCT2520
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Am29C827/Am29C828 Am29C927/Am29C928 Am29C827/Am29C828 Am29C927/Am29C928 High-Performance CMOS Bus Buffers DISTINCTIVE CHARACTERISTICS • • • High-speed CMOS buffers and inverters - D-Y delay = 7 ns typical Low standby power JEDEC FCT-compatible specs
|
OCR Scan
|
Am29C827/Am29C828
Am29C927/Am29C928
200-mV
Am29C900
Am29C827
Am29C828
10-bit
|
PDF
|
am29c841
Abstract: 17Z6 Am29C941 Am29C843
Text: Am29C841 / Am29C843 Am29C941 / Am29C943 High-Performance CMOS Bus Interface Latches • • • JEDEC FCT-compatible specs Extra-wide 9- and 10-bit data paths Am29C900 DIP pinout option reduces lead inductance on Vcc and GND pins GENERAL DESCRIPTION The Am29C841 and Am29C843 CMOS Bus Interface
|
OCR Scan
|
Am29C841
Am29C843
Am29C941
Am29C943
Am29C841/
Am29C941/
10-bit)
Am29C900
17Z6
|
PDF
|
PIC1670
Abstract: ASCII keyboard Key rollover kb3660s Master Instrument
Text: GENERAL INSTRUMENT KB3660S PROGRAMMABLE MICROCOMPUTER SERIAL KEYBOARD ENCODER FEATURES: PIN CONFIGURATION 40 LEAD DUAL IN LINE - Microcomputer based keyboard encoder - Single +5V power supply TOP VIEW - On-chip oscillator for 4MHz crystal - N-key roll-over
|
OCR Scan
|
KB3660S
DS30007A-13
PIC1670
ASCII keyboard
Key rollover
kb3660s
Master Instrument
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16-BIT TRI-PORT BUS EXCHANGER IDT73720/A Integrated Device Technology, Inc* FEATURES: DESCRIPTION: • High-speed 16-bit bus exchange for interbus com m unica tion in the following environments: — Multi-way interleaving memory — Multiplexed address and data busses
|
OCR Scan
|
16-BIT
IDT73720/A
R3051
R3051â
R3721
68-Pin
80-Pin
A25771
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16-BIT TRI-PORT BUS EXCHANGER IDT73720/A Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed 16-bit bus exchange for interbus communica tion in the following environments: — Multi-way interleaving memory — Multiplexed address and data busses
|
OCR Scan
|
16-BIT
IDT73720/A
R3051
R3051â
R3721
68-Pin
80-Pin
|
PDF
|
keyboard encoder auto
Abstract: No abstract text available
Text: — _ _ _ - MICROCHIP TECHNOLOGY INC _ “-““ GENERAL INSTRUMENT — A3 t D • ^ blQ3201 □0D3T4S 3 ■ q i ~ i a ~05 '— \ KB3660S PROGRAMMABLE MICROCOMPUTER SERIAL KEYBOARD ENCODER FEATURES» - PIN CONFIGURATION 40 LEAD DUAL IN LINE
|
OCR Scan
|
blQ3201
KB3660S
KB3660S
DS30007A-13
keyboard encoder auto
|
PDF
|
|
|
C4353
Abstract: hc4351
Text: MOTOROLA SC { L O G I C ! OB DE | LBb7ES5 □OñDbtl 5 MOTOROLA I -, 5H J SEMICONDUCTOR TECHNICAL DATA Advance Information Analog Multiplexers/ Demultiplexers with Address Latch MC54/74HC4351 MC54/74HC4352 MC54/74HC4353 High-Performance Silicon-Gate CM OS
|
OCR Scan
|
MC54/74HC4351,
MC54/74HC4352,
MC54/74HC4353
HC4352
DT-51-U
MC54/74H
C4351
C54/74H
C4352*
C4353
hc4351
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC4351 MC54/74HC4352 MC54/74HC4353 Advance Information Analog M ultiplexers/ Dem ultiplexers w ith Address Latch High-Performance Silicon-Gate CM O S The MC54/74HC4351, MC54/74HC4352, and MC54/74HC4353 utilize silicon-gate
|
OCR Scan
|
MC54/74HC4351
MC54/74HC4352
MC54/74HC4353
MC54/74HC4351,
MC54/74HC4352,
MC54/74HC4353
MC54/74HC4351-MC54/74HC4352-MC54/74HC4353
HC4351
HC4352
C54/74HC4351â
|
PDF
|
E355D
Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Text: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20
|
OCR Scan
|
|
PDF
|
74S556
Abstract: DIODE s3l 65 diode S3l 83 max5076 88-pin-grid 54/74S556
Text: 16 x1 6 M u ltip lie r/D iv id e r S N 74S 516 Features/Benefits • Co-processor for enhancing the arithmetic speed of all present 16-bit and 8-bit microprocessors • Bus-oriented organization Ordering Information PART NUMBER PACKAGE TEMPERATURE SN74S516
|
OCR Scan
|
16-bit
24-pin
16x16
SN74S516
SN74S516
48x48
64x64
74S556
DIODE s3l 65
diode S3l 83
max5076
88-pin-grid
54/74S556
|
PDF
|
mikroelektronik ddr
Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden
|
OCR Scan
|
|
PDF
|
B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik
|
OCR Scan
|
|
PDF
|
P80A49H
Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.
|
OCR Scan
|
RMX/80,
P80A49H
8035HL
F1L 250 V fuse
BPK-70
interfacing 8275 crt controller with 8086
i8282
hall marking code A04
Transistor AF 138
DK55
82720 intel
|
PDF
|
