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    Y21T Price and Stock

    Vishay Intertechnologies M55342K09B2Y21TWLT

    Resistor Chip Thick Film 2512 2.21kOhm ±0.5% 1W ±100ppm/°C - Waffle Pack (Alt: M55342K09B2Y21TWLT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas M55342K09B2Y21TWLT Waffle Pack 22 Weeks 25
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    • 100 $56.64045
    • 1000 $36.803
    • 10000 $17.577
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    Vishay Intertechnologies M55342K06B2Y21TWAT

    Resistor Chip Thick Film 0805 2.21kOhm ±0.5% 3/20W ±100ppm/°C - Waffle Pack (Alt: M55342K06B2Y21TWAT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas M55342K06B2Y21TWAT Waffle Pack 22 Weeks 25
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    • 100 $42.6288
    • 1000 $25.7621
    • 10000 $5.6295
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    Vishay Intertechnologies M55342K12B2Y21TWLT

    Resistor Chip Thick Film 0603 2.21kOhm ±0.5% 1/10W ±100ppm/°C - Waffle Pack (Alt: M55342K12B2Y21TWLT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas M55342K12B2Y21TWLT Waffle Pack 22 Weeks 25
    • 1 -
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    • 100 $45.46965
    • 1000 $32.9737
    • 10000 $15.9435
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    Vishay Intertechnologies M55342K12B2Y21TWAT

    Resistor Chip Thick Film 0603 2.21kOhm ±0.5% 1/10W ±100ppm/°C - Waffle Pack (Alt: M55342K12B2Y21TWAT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas M55342K12B2Y21TWAT Waffle Pack 22 Weeks 25
    • 1 -
    • 10 -
    • 100 $37.89405
    • 1000 $27.4756
    • 10000 $13.284
    		Buy Now

    Vishay Intertechnologies M55342K02B2Y21TWLT

    Resistor Thick Film 0505 2.21kOhm ±0.5% 1/8W ±100ppm/°C - Waffle Pack (Alt: M55342K02B2Y21TWLT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas M55342K02B2Y21TWLT Waffle Pack 22 Weeks 25
    • 1 -
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    • 100 $65.3877
    • 1000 $42.6587
    • 10000 $8.37
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    Find more Y21T price and stock on Findchips.com

    Y21T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet p321

    Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS


    Original     		PDF AN215A/D AN215A mosfet p321 motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t

    AN215A

    Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		PDF AN215A/D AN215A AN215A mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing

    mosfet p321

    Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
    Text: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation


    Original     		PDF AN215A/D AN215A mosfet p321 Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A

    sd 4093

    Abstract: HF 4093 N 4220 2N4119 4446 transistor ESM 30 2N 4117 4392 2N4118 2N4416
    Text: o n channel field effect transistors — metal case transistors à effet de cham p-canal n — boîtier métal Type 2N 2N 2N 2N 2N 3821 3822 3823 3824 3966 2N 4117 2N 4117 A 2N4118 2N 4118 A 2N4119 2N 4119 A 2N 2N 2N 2N 2N 2N 4220 4220 A 4221 4221 A 4222 4222 A


    OCR Scan     		PDF 2N4118 2N4119 2N5433 sd 4093 HF 4093 N 4220 4446 transistor ESM 30 2N 4117 4392 2N4416

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor