Untitled
Abstract: No abstract text available
Text: Preliminary User’s Manual V850ES/SG2 32-Bit Single-Chip Microcontroller Hardware µPD703262HY µPD703263HY µPD70F3263HY µPD703272HY µPD703273HY µPD70F3273HY µPD703282HY µPD703283HY µPD70F3283HY Document No. U17644EJ1V0UD00 1st edition Date Published September 2005 N CP(K)
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V850ES/SG2
32-Bit
PD703262HY
PD703263HY
PD70F3263HY
PD703272HY
PD703273HY
PD70F3273HY
PD703282HY
PD703283HY
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w19b320
Abstract: No abstract text available
Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W19B320AT/B
w19b320
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upsd
Abstract: UPS3200 TQFP52 TQFP80 uPSD3200 uPSD3233B uPSD3233BV uPSD3234A uPSD3234A-40 uPSD3234BV
Text: uPSD3234A, uPSD3234BV uPSD3233B, uPSD3233BV Flash Programmable System Devices with 8032 Microcontroller Core FEATURES SUMMARY • The uPSD323X Devices combine a Flash PSD architecture with an 8032 microcontroller core. The uPSD323X Devices of Flash PSDs feature dual banks of Flash memory, SRAM,
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uPSD3234A
uPSD3234BV
uPSD3233B
uPSD3233BV
uPSD323X
16-bit
128change
upsd
UPS3200
TQFP52
TQFP80
uPSD3200
uPSD3234A-40
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23TI
Abstract: UPS3200 TQFP52 TQFP80 uPSD3253B uPSD3253BV uPSD3254A uPSD3254BV uPSD325X BV-24
Text: uPSD3254A, uPSD3254BV uPSD3253B, uPSD3253BV Flash Programmable System Devices with 8032 Microcontroller Core FEATURES SUMMARY • The uPSD325X devices combine a Flash PSD architecture with an 8032 microcontroller core. The uPSD325X devices of Flash PSDs feature dual banks of Flash memory, SRAM,
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uPSD3254A
uPSD3254BV
uPSD3253B
uPSD3253BV
uPSD325X
16-bit
32KByte
128KBychange
23TI
UPS3200
TQFP52
TQFP80
BV-24
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FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V
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DS05-20904-2E
MBM29DL32TF/BF-70
MBM29DL32TF/BF
MBM29DL32TF/BF
F0305
FPT-48P-M19
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20888-2E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29LV800TE70/90/MBM29LV800BE70/90 • DESCRIPTION The MBM29LV800TE/BE are 8 M-bit, 3.0 V-only Flash memories organized as 1 M bytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin CSOP package. These devices are
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DS05-20888-2E
MBM29LV800TE70/90/MBM29LV800BE70/90
MBM29LV800TE/BE
48-pin
MBM29LV800TE/BE
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MBM29F040
Abstract: FPT-32P-M24 MBM29F040C R095
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20842-4E FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29F040C-55/-70/-90 • FEATURES • • • • • • • • • • • • Single 5.0 V read, program and erase Minimizes system level power requirements Compatible with JEDEC-standard commands
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DS05-20842-4E
MBM29F040C-55/-70/-90
32-pin
MBM29F040
FPT-32P-M24
MBM29F040C
R095
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mx29lv320ttc
Abstract: MX29LV320T Q0-Q15 SA10
Text: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention
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MX29LV320T/B
32M-BIT
200nA
10-year
64K-Byte
FEB/10/2003
MAR/26/2003
APR/23/2003
JUL/04/2003
mx29lv320ttc
MX29LV320T
Q0-Q15
SA10
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FPT-48P-M19
Abstract: FPT-48P-M20 mbm28f800 MBM28F800TA 77ff
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20841-4E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29F800TA-55/-70/-90/MBM29F800BA-55/-70/-90 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands
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DS05-20841-4E
8/512K
9F800TA-55/-70/-90/MBM29F800BA-55/-70/-90
48-pin
44-pin
FPT-48P-M19
FPT-48P-M20
mbm28f800
MBM28F800TA
77ff
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nec V850e2m manual
Abstract: v850E2M architecture v850e2 architecture
Text: Cover User’s Manual 32 V850E2/PG4-L User’s Manual: Hardware Renesas microcomputers V850 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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V850E2/PG4-L
R01UH0336EJ0102
nec V850e2m manual
v850E2M architecture
v850e2 architecture
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
F0210
FPT-48P-M19
FPT-48P-M20
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Untitled
Abstract: No abstract text available
Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from
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Am29DL800B
8-Bit/512
16-Bit)
Am29DL800
FBB048.
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Am29DL400BT
Abstract: No abstract text available
Text: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,
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Am29DL400B
16-Bit)
44-Pin
16-038-S044-2
Am29DL400BT
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amd 29F400AB
Abstract: 29F400AT 29F400AB
Text: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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Am29F400AT/Am29F400AB
S-Bit/262
16-Bit)
44-pin
48-pin
Am29F400AT/Am
29F400AB
Am29F400T/Am29F400B
18612B.
amd 29F400AB
29F400AT
29F400AB
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Untitled
Abstract: No abstract text available
Text: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements
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Am29F200T/Am29F200B
8-BII/131
16-Blt)
44-pin
48-pin
Am29F200
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements
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Am29F200AT/Am29F200AB
44-pin
48-pin
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Untitled
Abstract: No abstract text available
Text: SEE NEW DESIGN RECOMMENDATIONS in te i REFERENCE ONLY 28F016SA FlashFile MEMORY Includes Commercial and Extended Temperature Specifications Revolutionary Architecture — Pipelined Command Execution — Program during Erase — Command Superset of Intel
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28F016SA
28F008SA
56-Lead,
28F016SA
28F032SA
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Untitled
Abstract: No abstract text available
Text: mosaic 512K x 32 FLASH MODULE PUMA 2/67/77F16006/A-80/90/12/15 semiconductor, inc. Issue 4 .0 : Novem ber 1996 Description Features Mosaic offers a flexible range of high density • 16 Megabit CMOS 5.0V operation only FLASH • Modules in industry standard packages. These
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2/67/77F16006/A-80/90/12/15
512Kx32,
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 16 M 2 M x 8 / 1 M x 16 BIT MBM29LV160T-90-12/MBM29LV16 OB-90/-12 • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs
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MBM29LV160T-90-12/MBM29LV16
OB-90/-12
48-pin
46-pin
48-ball
6C-46P-M02)
46002S-4C
MBM29LV160T-90/-12/M
LV160
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY CMOS 4M 512K x 8 BIT MBM29F040C 70/-90 - • FEATURES • • • • • • • • • • • • Single 5.0 V read, program and erase Minimizes system level power requirements Compatible with JED EC-standard commands Uses same software commands as E2PROMs
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MBM29F040C
32-pin
MBM29F040C-70/-90
FPT-32P-M25)
F32036S-2C-2
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20843-3E FLASH MEMORY CMOS 16M 2M X 8 BIT MBM29F017A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash
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DS05-20843-3E
MBM29F017A-70/-90/-12
48-pin
40-pin
F48029S-2C-2
FPT-48P-M20)
F48030S-2C-2
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 2 Megabit SRAM / 8 Megabit FLASH DP3SZ128512X16NY5 MICROSYSTEMS A D V A N C ED INFO RM ATIO N D E S C R IP T IO N : PIN -O U T DIAGRAM The D P3SZ12851 2X1 6 N Y 5 m o d u le s are a re v o lu tio n a ry new m em ory subsystem using D ense-P ac M ic ro s y s te m s ’ TSO P s ta c k in g
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DP3SZ128512X16NY5
P3SZ12851
30A193-00
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29F400TC
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20851-4E FLASH MEMORY B lB 4M 512K X 8/256K x 16 BIT MBM29F400TC-55/-70/-90/MBM29F400BC-55/-70A90
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DS05-20851-4E
8/256K
29F400TC-55/-70/-90/MBM29F400BC-55/-70A90
48-pin
44-pin
F48030S-2C-2
9F400TC-55/-70/-90/MBM29F40QBC-55/-70/-90
FPT-44P-M16)
F44023S-3C-3
29F400TC
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Untitled
Abstract: No abstract text available
Text: Advance Information C A T 29F 150 1.5 Megabit CMOS 5V Only Sector Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120/150 ns ■ Sectored Architecture: End of Write Detection — One 16-KB Boot Sector
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16-KB
32-KB
64-KB
32-pin
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