2SC3757
Abstract: XP5A554
Text: Composite Transistors XP5A554 Silicon NPN epitaxial planer transistor Unit: mm For high speed switching ● 1 6 2 5 3 4 2SC3757 x 2 elements • Absolute Maximum Ratings Parameter Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage
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XP5A554
2SC3757
2SC3757
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP0A554 XP5A554 Silicon NPN epitaxial planer transistor 0.2±0.05 5 4 1.25±0.10 2.1±0.1 Features For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package. ● ● 5°
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XP0A554
XP5A554)
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2SC3757
Abstract: XP0A554 XP5A554
Text: Composite Transistors XP0A554 XP5A554 Silicon NPN epitaxial planer transistor (0.425) Unit: mm For high speed switching M Di ain sc te on na tin nc ue e/ d 0.2±0.05 5 6 ● For high speed switching. Low collector to emitter saturation voltage VCE(sat).
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XP0A554
XP5A554)
2SC3757
XP0A554
XP5A554
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2SC3757
Abstract: XP0A554 XP5A554
Text: Composite Transistors XP0A554 XP5A554 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● For high speed switching. Low collector to emitter saturation voltage VCE(sat). Two elements incorporated into one package. 0.2±0.1 ● 4 Features 5° ● 0.12+0.05
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XP0A554
XP5A554)
2SC3757
2SC3757
XP0A554
XP5A554
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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