14522
Abstract: DM6030HK
Text: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD August 2010 - Rev 26-Aug-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept
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P1058-BD
26-Aug-10
MIL-STD-883
surf058-BD-EV1
XP1058-BD
14522
DM6030HK
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Untitled
Abstract: No abstract text available
Text: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD February 2009 - Rev 02-Feb-09 Features 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power
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02-Feb-09
P1058-BD
MIL-STD-883
aD-000V
XP1058-BD-EV1
XP1058-BD
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XP1052-SC
Abstract: 27 Mhz power amplifier XL101 power amplifier mmic XP1055-BD ir amplifier QFN 7X7 XP1035-BD XP1039-QJ rf sot89 50
Text: N E W P RO D U C T S – M AY 2 0 0 8 Our MMIC Product Matrix contains a snapshot view of our current product line. As Mimix strives to provide extensive applications engineering support and customer service, the product development categories for our MMIC devices should help design engineers
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XR1002
-20dBm
-80dBm
XP1043-QH
XR1011-BD
XR1011-QH
XX1007-BD
XX1007-QT
XR1004
XP1052-SC
27 Mhz power amplifier
XL101
power amplifier mmic
XP1055-BD
ir amplifier
QFN 7X7
XP1035-BD
XP1039-QJ
rf sot89 50
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tanaka wire
Abstract: dm6030hk tanaka epoxy
Text: 14.0-16.0 GHz GaAs MMIC Power Amplifier P1058-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power
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12-May-08
P1058-BD
MIL-STD-883
passivatiD-000V
XP1058-BD-EV1
XP1058-BD
tanaka wire
dm6030hk
tanaka epoxy
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xg1015-SE
Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Text: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com
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XP1058
Abstract: BD 149 transistor bd 36 930 DM6030HK XP1058-BD
Text: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept
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P1058-BD
04-Jan-10
MIL-STD-883
sur058-BD-EV1
XP1058-BD
XP1058
BD 149 transistor
bd 36 930
DM6030HK
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